Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source

Shape changes in the capping process of low density InAs quantum dots (QDs) with a thin GaAs layer under As4 and As2 conditions were investigated by atomic force microscopy. The shapes of the capped QDs differ considerably depending on the used arsenic source, As4 or As2. In the case of the As4 sour...

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