Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers

Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport meth...

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Bibliographische Detailangaben

Hauptverfasser:	Hupfer, Thomas, Syväjärvi, Mikael, Ou, Yi Yu, Jokubavicius, Valdas, Schimmel, Saskia, Kaiser, Michl, Wellmann, Peter J., Ou, Hai Yan, Linnarsson, Margareta K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Doping Epitaxial growth Evolution Grains Orientation Polycrystalline Polytypes PVT Silicon Carbide Sublimation Surface kinetics Transport
Online-Zugang:	Volltext
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