Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4A4)I- surface

The initial incorporation processes of bismuth on GaAs(001)-c(4A4) surface are investigated by using our ab initio-based approach taking chemical potentials in the gas phase into account. The calculated surface phase diagrams obtained by comparing the adsorption energy with the gas-phase chemical po...

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Veröffentlicht in:	Journal of crystal growth 2013-09, Vol.378, p.21-24
Hauptverfasser:	Murase, Isao, Akiyama, Toru, Nakamura, Kohji, Ito, Tomonori
Format:	Artikel
Sprache:	eng
Schlagworte:	Adsorption Bismuth Chemical potential Crystal growth Desorption Dimers Phase diagrams Surface chemistry
Online-Zugang:	Volltext
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