Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4A4)I- surface
The initial incorporation processes of bismuth on GaAs(001)-c(4A4) surface are investigated by using our ab initio-based approach taking chemical potentials in the gas phase into account. The calculated surface phase diagrams obtained by comparing the adsorption energy with the gas-phase chemical po...
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| Veröffentlicht in: | Journal of crystal growth 2013-09, Vol.378, p.21-24 |
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| container_title | Journal of crystal growth |
| container_volume | 378 |
| creator | Murase, Isao Akiyama, Toru Nakamura, Kohji Ito, Tomonori |
| description | The initial incorporation processes of bismuth on GaAs(001)-c(4A4) surface are investigated by using our ab initio-based approach taking chemical potentials in the gas phase into account. The calculated surface phase diagrams obtained by comparing the adsorption energy with the gas-phase chemical potential demonstrate that the form of incorporated Bi depends on the growth conditions. The GaaBi dimer easily adsorbs on the missing dimer region of the c(4A4)I- surface where as the BiaBi dimer adsorption occurs after the GaaAs dimer desorption on the surface with a GaaBi dimer. These results imply that the adsorption of BiaBi dimer accompanied with GaaAs dimer desorption is crucial for the growth process of GaAsBi on GaAs(001) substrates. |
| doi_str_mv | 10.1016/j.jcrysgro.2012.12.047 |
| format | Article |
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The calculated surface phase diagrams obtained by comparing the adsorption energy with the gas-phase chemical potential demonstrate that the form of incorporated Bi depends on the growth conditions. The GaaBi dimer easily adsorbs on the missing dimer region of the c(4A4)I- surface where as the BiaBi dimer adsorption occurs after the GaaAs dimer desorption on the surface with a GaaBi dimer. These results imply that the adsorption of BiaBi dimer accompanied with GaaAs dimer desorption is crucial for the growth process of GaAsBi on GaAs(001) substrates.</description><identifier>ISSN: 0022-0248</identifier><identifier>DOI: 10.1016/j.jcrysgro.2012.12.047</identifier><language>eng</language><subject>Adsorption ; Bismuth ; Chemical potential ; Crystal growth ; Desorption ; Dimers ; Phase diagrams ; Surface chemistry</subject><ispartof>Journal of crystal growth, 2013-09, Vol.378, p.21-24</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Murase, Isao</creatorcontrib><creatorcontrib>Akiyama, Toru</creatorcontrib><creatorcontrib>Nakamura, Kohji</creatorcontrib><creatorcontrib>Ito, Tomonori</creatorcontrib><title>Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4A4)I- surface</title><title>Journal of crystal growth</title><description>The initial incorporation processes of bismuth on GaAs(001)-c(4A4) surface are investigated by using our ab initio-based approach taking chemical potentials in the gas phase into account. The calculated surface phase diagrams obtained by comparing the adsorption energy with the gas-phase chemical potential demonstrate that the form of incorporated Bi depends on the growth conditions. The GaaBi dimer easily adsorbs on the missing dimer region of the c(4A4)I- surface where as the BiaBi dimer adsorption occurs after the GaaAs dimer desorption on the surface with a GaaBi dimer. These results imply that the adsorption of BiaBi dimer accompanied with GaaAs dimer desorption is crucial for the growth process of GaAsBi on GaAs(001) substrates.</description><subject>Adsorption</subject><subject>Bismuth</subject><subject>Chemical potential</subject><subject>Crystal growth</subject><subject>Desorption</subject><subject>Dimers</subject><subject>Phase diagrams</subject><subject>Surface chemistry</subject><issn>0022-0248</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqVjMtqwzAURLVooWmSXyhaOgupV4rqpEun5NF9yNZcq3Ir41qOrr0I9OMjSH6gMHAG5jCMvSiQClT-2sjGxgt9xyA1KC1TwKwe2ARAawHarJ_YM1EDkGwFE3YqKu47P_ggKiT3xbHvY0D7w4dwG7BNtCH2IWLSOh5qvvE8lb89FpSlp4WwmSnM4lNwGmON1s3YY40tufmdU5bttsePg0jn59HRUP56sq5tsXNhpFLlK_VmlpC_L_-hXgEw-0nQ</recordid><startdate>20130901</startdate><enddate>20130901</enddate><creator>Murase, Isao</creator><creator>Akiyama, Toru</creator><creator>Nakamura, Kohji</creator><creator>Ito, Tomonori</creator><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130901</creationdate><title>Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4A4)I- surface</title><author>Murase, Isao ; Akiyama, Toru ; Nakamura, Kohji ; Ito, Tomonori</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_16715430693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Adsorption</topic><topic>Bismuth</topic><topic>Chemical potential</topic><topic>Crystal growth</topic><topic>Desorption</topic><topic>Dimers</topic><topic>Phase diagrams</topic><topic>Surface chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Murase, Isao</creatorcontrib><creatorcontrib>Akiyama, Toru</creatorcontrib><creatorcontrib>Nakamura, Kohji</creatorcontrib><creatorcontrib>Ito, Tomonori</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Murase, Isao</au><au>Akiyama, Toru</au><au>Nakamura, Kohji</au><au>Ito, Tomonori</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4A4)I- surface</atitle><jtitle>Journal of crystal growth</jtitle><date>2013-09-01</date><risdate>2013</risdate><volume>378</volume><spage>21</spage><epage>24</epage><pages>21-24</pages><issn>0022-0248</issn><abstract>The initial incorporation processes of bismuth on GaAs(001)-c(4A4) surface are investigated by using our ab initio-based approach taking chemical potentials in the gas phase into account. The calculated surface phase diagrams obtained by comparing the adsorption energy with the gas-phase chemical potential demonstrate that the form of incorporated Bi depends on the growth conditions. The GaaBi dimer easily adsorbs on the missing dimer region of the c(4A4)I- surface where as the BiaBi dimer adsorption occurs after the GaaAs dimer desorption on the surface with a GaaBi dimer. These results imply that the adsorption of BiaBi dimer accompanied with GaaAs dimer desorption is crucial for the growth process of GaAsBi on GaAs(001) substrates.</abstract><doi>10.1016/j.jcrysgro.2012.12.047</doi></addata></record> |
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| ispartof | Journal of crystal growth, 2013-09, Vol.378, p.21-24 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Adsorption Bismuth Chemical potential Crystal growth Desorption Dimers Phase diagrams Surface chemistry |
| title | Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4A4)I- surface |
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