p-Type conductivity and stability of Ag–N codoped ZnO thin films

•Ag–N dual-doped p-type ZnO films were grown on quartz substrate.•The p-type behavior of ZnO:(Ag, N) film is not stable.•The instability of p-ZnO is due to the presence of Ag aggregation and Ni in the film. Silver and nitrogen codoped ZnO films [ZnO:(Ag, N)] were grown on quartz substrates by radio...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of alloys and compounds 2014-10, Vol.609, p.173-177
Hauptverfasser: Li, Wanjun, Kong, Chunyang, Qin, Guoping, Ruan, Haibo, Fang, Liang
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 177
container_issue
container_start_page 173
container_title Journal of alloys and compounds
container_volume 609
creator Li, Wanjun
Kong, Chunyang
Qin, Guoping
Ruan, Haibo
Fang, Liang
description •Ag–N dual-doped p-type ZnO films were grown on quartz substrate.•The p-type behavior of ZnO:(Ag, N) film is not stable.•The instability of p-ZnO is due to the presence of Ag aggregation and Ni in the film. Silver and nitrogen codoped ZnO films [ZnO:(Ag, N)] were grown on quartz substrates by radio frequency magnetron sputtering deposition followed by ion-implantation technique. Room-temperature (RT) Hall-effect measurements confirm that Ag–N codoped ZnO film is converted to p-type ZnO under optimum post-annealing conditions. The p-type conductivity of ZnO:(Ag, N) is attributed to the formation of the AgZn–NO pairs and/or NO–AgZn–NO triangles, which can create impurity bands above the VBM of ZnO due to the p–d interaction between accepters and hence offer improved incorporation and activation of acceptors. The sample exhibited a stable conductivity-type over four month period after post-annealing, but apparent degradation of p-type characteristic was observed. It is demonstrated that the Ag aggregation (metallic Ag and/or Ag2O) can be stable in the film and metastable interstitial nitrogen is easy to diffuse and be trapped by acceptor NO to form double-donor (N2)O at RT, resulting in a decrease in the conductivity and stability of p-type ZnO:(Ag, N) film.
doi_str_mv 10.1016/j.jallcom.2014.04.051
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671542528</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0925838814008640</els_id><sourcerecordid>1671542528</sourcerecordid><originalsourceid>FETCH-LOGICAL-c372t-975826e28d6b9580799b86966a634a6501e5ce70fe57889956bff48835d7827f3</originalsourceid><addsrcrecordid>eNqFkM1Kw0AUhQdRsFYfQchGcJM4M8n8raQW_6DYTd24GSbzoxOSTMykhe58B9_QJzGlxa1w4HLhO_dwDwCXCGYIInpTZZWqax2aDENUZHAUQUdggjjL04JScQwmUGCS8pzzU3AWYwUhRCJHE3DXpattZxMdWrPWg9_4YZuo1iRxUKWvd1twyez95-v7ZYRM6KxJ3tplMnz4NnG-buI5OHGqjvbiMKfg9eF-NX9KF8vH5_lskeqc4SEVjHBMLeaGloJwyIQoORWUKpoXihKILNGWQWcJ41wIQkvnCs5zYhjHzOVTcL2_2_Xhc23jIBsfta1r1dqwjhJRhkiBCeYjSvao7kOMvXWy632j-q1EUO46k5U8dCZ3nUk4iqDRd3WIUFGr2vWq1T7-mTEfGYjIyN3uOTv-u_G2l1F722prfG_1IE3w_yT9An8tg20</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671542528</pqid></control><display><type>article</type><title>p-Type conductivity and stability of Ag–N codoped ZnO thin films</title><source>Elsevier ScienceDirect Journals Complete - AutoHoldings</source><creator>Li, Wanjun ; Kong, Chunyang ; Qin, Guoping ; Ruan, Haibo ; Fang, Liang</creator><creatorcontrib>Li, Wanjun ; Kong, Chunyang ; Qin, Guoping ; Ruan, Haibo ; Fang, Liang</creatorcontrib><description>•Ag–N dual-doped p-type ZnO films were grown on quartz substrate.•The p-type behavior of ZnO:(Ag, N) film is not stable.•The instability of p-ZnO is due to the presence of Ag aggregation and Ni in the film. Silver and nitrogen codoped ZnO films [ZnO:(Ag, N)] were grown on quartz substrates by radio frequency magnetron sputtering deposition followed by ion-implantation technique. Room-temperature (RT) Hall-effect measurements confirm that Ag–N codoped ZnO film is converted to p-type ZnO under optimum post-annealing conditions. The p-type conductivity of ZnO:(Ag, N) is attributed to the formation of the AgZn–NO pairs and/or NO–AgZn–NO triangles, which can create impurity bands above the VBM of ZnO due to the p–d interaction between accepters and hence offer improved incorporation and activation of acceptors. The sample exhibited a stable conductivity-type over four month period after post-annealing, but apparent degradation of p-type characteristic was observed. It is demonstrated that the Ag aggregation (metallic Ag and/or Ag2O) can be stable in the film and metastable interstitial nitrogen is easy to diffuse and be trapped by acceptor NO to form double-donor (N2)O at RT, resulting in a decrease in the conductivity and stability of p-type ZnO:(Ag, N) film.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2014.04.051</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Activation ; Agglomeration ; Alloys ; Chemical states ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; First-principle ; Interstitials ; Low-field transport and mobility; piezoresistance ; Magnetron sputtering ; p-Type ZnO ; Physics ; Silver ; Stability ; Thin films ; Zinc oxide</subject><ispartof>Journal of alloys and compounds, 2014-10, Vol.609, p.173-177</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c372t-975826e28d6b9580799b86966a634a6501e5ce70fe57889956bff48835d7827f3</citedby><cites>FETCH-LOGICAL-c372t-975826e28d6b9580799b86966a634a6501e5ce70fe57889956bff48835d7827f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2014.04.051$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,778,782,3539,27911,27912,45982</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=28513015$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Wanjun</creatorcontrib><creatorcontrib>Kong, Chunyang</creatorcontrib><creatorcontrib>Qin, Guoping</creatorcontrib><creatorcontrib>Ruan, Haibo</creatorcontrib><creatorcontrib>Fang, Liang</creatorcontrib><title>p-Type conductivity and stability of Ag–N codoped ZnO thin films</title><title>Journal of alloys and compounds</title><description>•Ag–N dual-doped p-type ZnO films were grown on quartz substrate.•The p-type behavior of ZnO:(Ag, N) film is not stable.•The instability of p-ZnO is due to the presence of Ag aggregation and Ni in the film. Silver and nitrogen codoped ZnO films [ZnO:(Ag, N)] were grown on quartz substrates by radio frequency magnetron sputtering deposition followed by ion-implantation technique. Room-temperature (RT) Hall-effect measurements confirm that Ag–N codoped ZnO film is converted to p-type ZnO under optimum post-annealing conditions. The p-type conductivity of ZnO:(Ag, N) is attributed to the formation of the AgZn–NO pairs and/or NO–AgZn–NO triangles, which can create impurity bands above the VBM of ZnO due to the p–d interaction between accepters and hence offer improved incorporation and activation of acceptors. The sample exhibited a stable conductivity-type over four month period after post-annealing, but apparent degradation of p-type characteristic was observed. It is demonstrated that the Ag aggregation (metallic Ag and/or Ag2O) can be stable in the film and metastable interstitial nitrogen is easy to diffuse and be trapped by acceptor NO to form double-donor (N2)O at RT, resulting in a decrease in the conductivity and stability of p-type ZnO:(Ag, N) film.</description><subject>Activation</subject><subject>Agglomeration</subject><subject>Alloys</subject><subject>Chemical states</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>First-principle</subject><subject>Interstitials</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Magnetron sputtering</subject><subject>p-Type ZnO</subject><subject>Physics</subject><subject>Silver</subject><subject>Stability</subject><subject>Thin films</subject><subject>Zinc oxide</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkM1Kw0AUhQdRsFYfQchGcJM4M8n8raQW_6DYTd24GSbzoxOSTMykhe58B9_QJzGlxa1w4HLhO_dwDwCXCGYIInpTZZWqax2aDENUZHAUQUdggjjL04JScQwmUGCS8pzzU3AWYwUhRCJHE3DXpattZxMdWrPWg9_4YZuo1iRxUKWvd1twyez95-v7ZYRM6KxJ3tplMnz4NnG-buI5OHGqjvbiMKfg9eF-NX9KF8vH5_lskeqc4SEVjHBMLeaGloJwyIQoORWUKpoXihKILNGWQWcJ41wIQkvnCs5zYhjHzOVTcL2_2_Xhc23jIBsfta1r1dqwjhJRhkiBCeYjSvao7kOMvXWy632j-q1EUO46k5U8dCZ3nUk4iqDRd3WIUFGr2vWq1T7-mTEfGYjIyN3uOTv-u_G2l1F722prfG_1IE3w_yT9An8tg20</recordid><startdate>20141005</startdate><enddate>20141005</enddate><creator>Li, Wanjun</creator><creator>Kong, Chunyang</creator><creator>Qin, Guoping</creator><creator>Ruan, Haibo</creator><creator>Fang, Liang</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141005</creationdate><title>p-Type conductivity and stability of Ag–N codoped ZnO thin films</title><author>Li, Wanjun ; Kong, Chunyang ; Qin, Guoping ; Ruan, Haibo ; Fang, Liang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-975826e28d6b9580799b86966a634a6501e5ce70fe57889956bff48835d7827f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Activation</topic><topic>Agglomeration</topic><topic>Alloys</topic><topic>Chemical states</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>First-principle</topic><topic>Interstitials</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Magnetron sputtering</topic><topic>p-Type ZnO</topic><topic>Physics</topic><topic>Silver</topic><topic>Stability</topic><topic>Thin films</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Wanjun</creatorcontrib><creatorcontrib>Kong, Chunyang</creatorcontrib><creatorcontrib>Qin, Guoping</creatorcontrib><creatorcontrib>Ruan, Haibo</creatorcontrib><creatorcontrib>Fang, Liang</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Wanjun</au><au>Kong, Chunyang</au><au>Qin, Guoping</au><au>Ruan, Haibo</au><au>Fang, Liang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>p-Type conductivity and stability of Ag–N codoped ZnO thin films</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2014-10-05</date><risdate>2014</risdate><volume>609</volume><spage>173</spage><epage>177</epage><pages>173-177</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>•Ag–N dual-doped p-type ZnO films were grown on quartz substrate.•The p-type behavior of ZnO:(Ag, N) film is not stable.•The instability of p-ZnO is due to the presence of Ag aggregation and Ni in the film. Silver and nitrogen codoped ZnO films [ZnO:(Ag, N)] were grown on quartz substrates by radio frequency magnetron sputtering deposition followed by ion-implantation technique. Room-temperature (RT) Hall-effect measurements confirm that Ag–N codoped ZnO film is converted to p-type ZnO under optimum post-annealing conditions. The p-type conductivity of ZnO:(Ag, N) is attributed to the formation of the AgZn–NO pairs and/or NO–AgZn–NO triangles, which can create impurity bands above the VBM of ZnO due to the p–d interaction between accepters and hence offer improved incorporation and activation of acceptors. The sample exhibited a stable conductivity-type over four month period after post-annealing, but apparent degradation of p-type characteristic was observed. It is demonstrated that the Ag aggregation (metallic Ag and/or Ag2O) can be stable in the film and metastable interstitial nitrogen is easy to diffuse and be trapped by acceptor NO to form double-donor (N2)O at RT, resulting in a decrease in the conductivity and stability of p-type ZnO:(Ag, N) film.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2014.04.051</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0925-8388
ispartof Journal of alloys and compounds, 2014-10, Vol.609, p.173-177
issn 0925-8388
1873-4669
language eng
recordid cdi_proquest_miscellaneous_1671542528
source Elsevier ScienceDirect Journals Complete - AutoHoldings
subjects Activation
Agglomeration
Alloys
Chemical states
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
First-principle
Interstitials
Low-field transport and mobility
piezoresistance
Magnetron sputtering
p-Type ZnO
Physics
Silver
Stability
Thin films
Zinc oxide
title p-Type conductivity and stability of Ag–N codoped ZnO thin films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T14%3A01%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=p-Type%20conductivity%20and%20stability%20of%20Ag%E2%80%93N%20codoped%20ZnO%20thin%20films&rft.jtitle=Journal%20of%20alloys%20and%20compounds&rft.au=Li,%20Wanjun&rft.date=2014-10-05&rft.volume=609&rft.spage=173&rft.epage=177&rft.pages=173-177&rft.issn=0925-8388&rft.eissn=1873-4669&rft_id=info:doi/10.1016/j.jallcom.2014.04.051&rft_dat=%3Cproquest_cross%3E1671542528%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671542528&rft_id=info:pmid/&rft_els_id=S0925838814008640&rfr_iscdi=true