A study on segregation layers of Bi4Si3O12 crystal grown by the Bridgman method

Bismuth silicate (Bi4Si3O12, BSO) crystals including and excluding segregation layers have been grown by the Bridgman method. The morphology and composition of segregation layers existing in the defective crystal were investigated, and the crystallization habit of BSO crystal was discussed. In order...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2013-08, Vol.377, p.160-163
Hauptverfasser:	Xiong, Wei, Zhou, Yao, Guo, Feiyun, Chen, Liang, Luo, Caiyun, Yuan, Hui
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Segregation A2. Bridgman technique A2. Single crystal growth B1. Bismuth compounds B2. Scintillator materials Bridgman method Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal defects Crystal growth Crystals Equations of state, phase equilibria, and phase transitions Exact sciences and technology Excitation spectra Growth from melts zone melting and refining Luminescence Materials science Methods of crystal growth physics of crystal growth Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics Segregations Solid-solid transitions Solubility, segregation, and mixing phase separation Specific phase transitions Spectra
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!