Influence of deposition time on the microstructure and dielectric properties of AlN/Si thin films for enhanced hydrogen sensing application

•Growth of highly oriented (002) preferential AlN plane with enhanced crystal quality.•SEM pictures revealed that the crystalline growth increased with the deposition time.•MIS structures fabricated showed a significant improvement of dielectric characteristics.•Pd/AlN/Si device show enhanced H2 sen...

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Veröffentlicht in:	Microelectronic engineering 2014-01, Vol.113, p.29-34
Hauptverfasser:	Vijayalakshmi, K., Pillay, V. Vasanthi
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum Nitride Deposition Devices H2 sensor MIS capacitors Palladium Preferential orientations Scanning electron microscopy Silicon Silicon substrates Sputtering Thin films
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