Synthesis of nanocrystalline In2O3 on different Si substrates at wet oxidation environment
Polycrystalline cubic indium oxide (In2O3) thin films were successfully grown without catalyst on the different orientation of Si substrates. In2O3 thin films have been synthesized by thermal evaporation of indium on unheated Si substrates, followed by wet oxidation process. The structural and optic...
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| Veröffentlicht in: | Optik (Stuttgart) 2013-09, Vol.124 (17), p.2679-2681 |
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| creator | Amirhoseiny, Maryam Hassan, Zainuriah ShaShiong, Ng |
| description | Polycrystalline cubic indium oxide (In2O3) thin films were successfully grown without catalyst on the different orientation of Si substrates. In2O3 thin films have been synthesized by thermal evaporation of indium on unheated Si substrates, followed by wet oxidation process. The structural and optical properties of the In2O3 films were studied in terms of different substrates orientation. Through the Scherrer structural analysis revealed nanocrystalline structure for In2O3 films grown on Si (110), Si (100) and Si (111) orientations with crystallite size of 2.53, 3.36 and 3.43nm, respectively. Photoluminescence spectra showed a strong and broad emission at 570nm with two shoulders at 547nm and 604nm which related to oxygen vacancies. The band gap of polycrystalline In2O3 is determined as 2.15±0.15eV. |
| doi_str_mv | 10.1016/j.ijleo.2012.08.073 |
| format | Article |
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In2O3 thin films have been synthesized by thermal evaporation of indium on unheated Si substrates, followed by wet oxidation process. The structural and optical properties of the In2O3 films were studied in terms of different substrates orientation. Through the Scherrer structural analysis revealed nanocrystalline structure for In2O3 films grown on Si (110), Si (100) and Si (111) orientations with crystallite size of 2.53, 3.36 and 3.43nm, respectively. Photoluminescence spectra showed a strong and broad emission at 570nm with two shoulders at 547nm and 604nm which related to oxygen vacancies. The band gap of polycrystalline In2O3 is determined as 2.15±0.15eV.</description><identifier>ISSN: 0030-4026</identifier><identifier>EISSN: 1618-1336</identifier><identifier>DOI: 10.1016/j.ijleo.2012.08.073</identifier><language>eng</language><publisher>Elsevier GmbH</publisher><subject>In2O3 nanocrystal ; Indium ; Indium oxides ; Nanocrystals ; Orientation ; Photoluminescence ; Si substrates ; Silicon ; Silicon substrates ; Thin films ; Wet oxidation</subject><ispartof>Optik (Stuttgart), 2013-09, Vol.124 (17), p.2679-2681</ispartof><rights>2012 Elsevier GmbH</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-b07ff1d001b8d8c14321f912a04ee5d789f7f26a5877cbe9524c711296b00eaf3</citedby><cites>FETCH-LOGICAL-c336t-b07ff1d001b8d8c14321f912a04ee5d789f7f26a5877cbe9524c711296b00eaf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.ijleo.2012.08.073$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,777,781,3537,27905,27906,45976</link.rule.ids></links><search><creatorcontrib>Amirhoseiny, Maryam</creatorcontrib><creatorcontrib>Hassan, Zainuriah</creatorcontrib><creatorcontrib>ShaShiong, Ng</creatorcontrib><title>Synthesis of nanocrystalline In2O3 on different Si substrates at wet oxidation environment</title><title>Optik (Stuttgart)</title><description>Polycrystalline cubic indium oxide (In2O3) thin films were successfully grown without catalyst on the different orientation of Si substrates. In2O3 thin films have been synthesized by thermal evaporation of indium on unheated Si substrates, followed by wet oxidation process. The structural and optical properties of the In2O3 films were studied in terms of different substrates orientation. Through the Scherrer structural analysis revealed nanocrystalline structure for In2O3 films grown on Si (110), Si (100) and Si (111) orientations with crystallite size of 2.53, 3.36 and 3.43nm, respectively. Photoluminescence spectra showed a strong and broad emission at 570nm with two shoulders at 547nm and 604nm which related to oxygen vacancies. The band gap of polycrystalline In2O3 is determined as 2.15±0.15eV.</description><subject>In2O3 nanocrystal</subject><subject>Indium</subject><subject>Indium oxides</subject><subject>Nanocrystals</subject><subject>Orientation</subject><subject>Photoluminescence</subject><subject>Si substrates</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Thin films</subject><subject>Wet oxidation</subject><issn>0030-4026</issn><issn>1618-1336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQQC0EEqXwC1g8siTcOW2cDAwI8VEJqQOwsFiOcxauUhtsF-i_J6XMTLe8d7p7jJ0jlAhYX65KtxoolAJQlNCUIKsDNsEamwKrqj5kE4AKihmI-pidpLQCAClBTtjr09bnN0ou8WC51z6YuE1ZD4PzxBdeLCsePO-dtRTJZ_7keNp0KUedKXGd-RdlHr5dr7MbQfKfLga_HtFTdmT1kOjsb07Zy93t881D8bi8X9xcPxZmPC0XHUhrsQfArukbg7NKoG1RaJgRzXvZtFZaUet5I6XpqJ2LmZGIoq07ANK2mrKL_d73GD42lLJau2RoGLSnsEkKa4lzAa1sR7TaoyaGlCJZ9R7dWsetQlC7kmqlfkuqXUkFjRpLjtbV3qLxi09HUSXjyBvqXSSTVR_cv_4P215-Sg</recordid><startdate>201309</startdate><enddate>201309</enddate><creator>Amirhoseiny, Maryam</creator><creator>Hassan, Zainuriah</creator><creator>ShaShiong, Ng</creator><general>Elsevier GmbH</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>201309</creationdate><title>Synthesis of nanocrystalline In2O3 on different Si substrates at wet oxidation environment</title><author>Amirhoseiny, Maryam ; Hassan, Zainuriah ; ShaShiong, Ng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-b07ff1d001b8d8c14321f912a04ee5d789f7f26a5877cbe9524c711296b00eaf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>In2O3 nanocrystal</topic><topic>Indium</topic><topic>Indium oxides</topic><topic>Nanocrystals</topic><topic>Orientation</topic><topic>Photoluminescence</topic><topic>Si substrates</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Thin films</topic><topic>Wet oxidation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Amirhoseiny, Maryam</creatorcontrib><creatorcontrib>Hassan, Zainuriah</creatorcontrib><creatorcontrib>ShaShiong, Ng</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optik (Stuttgart)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Amirhoseiny, Maryam</au><au>Hassan, Zainuriah</au><au>ShaShiong, Ng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis of nanocrystalline In2O3 on different Si substrates at wet oxidation environment</atitle><jtitle>Optik (Stuttgart)</jtitle><date>2013-09</date><risdate>2013</risdate><volume>124</volume><issue>17</issue><spage>2679</spage><epage>2681</epage><pages>2679-2681</pages><issn>0030-4026</issn><eissn>1618-1336</eissn><abstract>Polycrystalline cubic indium oxide (In2O3) thin films were successfully grown without catalyst on the different orientation of Si substrates. In2O3 thin films have been synthesized by thermal evaporation of indium on unheated Si substrates, followed by wet oxidation process. The structural and optical properties of the In2O3 films were studied in terms of different substrates orientation. Through the Scherrer structural analysis revealed nanocrystalline structure for In2O3 films grown on Si (110), Si (100) and Si (111) orientations with crystallite size of 2.53, 3.36 and 3.43nm, respectively. Photoluminescence spectra showed a strong and broad emission at 570nm with two shoulders at 547nm and 604nm which related to oxygen vacancies. The band gap of polycrystalline In2O3 is determined as 2.15±0.15eV.</abstract><pub>Elsevier GmbH</pub><doi>10.1016/j.ijleo.2012.08.073</doi><tpages>3</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | In2O3 nanocrystal Indium Indium oxides Nanocrystals Orientation Photoluminescence Si substrates Silicon Silicon substrates Thin films Wet oxidation |
| title | Synthesis of nanocrystalline In2O3 on different Si substrates at wet oxidation environment |
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