Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x = 0,1) thin films for phase-change memory

The phase-change behavior and microstructure changes of N-doped Ge3Sb2Te5 [N-GST(3/2/5)] and Ge2Sb2Te5 [GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transm...

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Veröffentlicht in:	Journal of applied physics 2013-01, Vol.113 (4)
Hauptverfasser:	Cheng, Limin, Wu, Liangcai, Song, Zhitang, Rao, Feng, Peng, Cheng, Yao, Dongning, Liu, Bo, Xu, Ling
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal structure Crystallization Diffraction Energy gaps (solid state) Face centered cubic lattice Nitrides Phase transformations Thin films X-rays
Online-Zugang:	Volltext
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