Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x = 0,1) thin films for phase-change memory
The phase-change behavior and microstructure changes of N-doped Ge3Sb2Te5 [N-GST(3/2/5)] and Ge2Sb2Te5 [GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transm...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2013-01, Vol.113 (4) |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 4 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 113 |
| creator | Cheng, Limin Wu, Liangcai Song, Zhitang Rao, Feng Peng, Cheng Yao, Dongning Liu, Bo Xu, Ling |
| description | The phase-change behavior and microstructure changes of N-doped Ge3Sb2Te5 [N-GST(3/2/5)] and Ge2Sb2Te5 [GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption. |
| doi_str_mv | 10.1063/1.4789388 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671515648</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1671515648</sourcerecordid><originalsourceid>FETCH-LOGICAL-c330t-c8fee602afa493f8854782d64baf35564eea02bfa654e646af2fc113b5d836183</originalsourceid><addsrcrecordid>eNqNkc1KAzEUhYMoWH8WvkGWLTo1P5M0s3AhRatQdKGuhzRz00ZmkjGZgnXlVh_TJ3GkfQDhXA5cPg4cDkJnlIwpkfySjvOJKrhSe2hAiSqyiRBkHw0IYTRTxaQ4REcpvRJCqeLFAH3fWAumSzhYvITYaO_WDda-wt51MSzBY-dNiG2IunPB414mblKn69p97F4WP2RVaKHCM2Dn708L9gwCD99_Pr-u-iMXdIS7lfPYurpJ2IaI25VOkJmV9kvADTQhbk7QgdV1gtOdH6OX25vn6V02f5zdT6_nmeGcdJlRFkASpq3OC26VEn1jVsl8oS0XQuYAmrCF1VLkIHOpLbOGUr4QleKyb32MhtvcNoa3NaSubFwyUNfaQ1inksoJFbQP-gfKGWesEAXt0dEWNTGkFMGWbXSNjpuSkvJvmpKWu2n4L7FlgjQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1323229591</pqid></control><display><type>article</type><title>Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x = 0,1) thin films for phase-change memory</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Cheng, Limin ; Wu, Liangcai ; Song, Zhitang ; Rao, Feng ; Peng, Cheng ; Yao, Dongning ; Liu, Bo ; Xu, Ling</creator><creatorcontrib>Cheng, Limin ; Wu, Liangcai ; Song, Zhitang ; Rao, Feng ; Peng, Cheng ; Yao, Dongning ; Liu, Bo ; Xu, Ling</creatorcontrib><description>The phase-change behavior and microstructure changes of N-doped Ge3Sb2Te5 [N-GST(3/2/5)] and Ge2Sb2Te5 [GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4789388</identifier><language>eng</language><subject>Crystal structure ; Crystallization ; Diffraction ; Energy gaps (solid state) ; Face centered cubic lattice ; Nitrides ; Phase transformations ; Thin films ; X-rays</subject><ispartof>Journal of applied physics, 2013-01, Vol.113 (4)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c330t-c8fee602afa493f8854782d64baf35564eea02bfa654e646af2fc113b5d836183</citedby><cites>FETCH-LOGICAL-c330t-c8fee602afa493f8854782d64baf35564eea02bfa654e646af2fc113b5d836183</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Cheng, Limin</creatorcontrib><creatorcontrib>Wu, Liangcai</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Rao, Feng</creatorcontrib><creatorcontrib>Peng, Cheng</creatorcontrib><creatorcontrib>Yao, Dongning</creatorcontrib><creatorcontrib>Liu, Bo</creatorcontrib><creatorcontrib>Xu, Ling</creatorcontrib><title>Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x = 0,1) thin films for phase-change memory</title><title>Journal of applied physics</title><description>The phase-change behavior and microstructure changes of N-doped Ge3Sb2Te5 [N-GST(3/2/5)] and Ge2Sb2Te5 [GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption.</description><subject>Crystal structure</subject><subject>Crystallization</subject><subject>Diffraction</subject><subject>Energy gaps (solid state)</subject><subject>Face centered cubic lattice</subject><subject>Nitrides</subject><subject>Phase transformations</subject><subject>Thin films</subject><subject>X-rays</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqNkc1KAzEUhYMoWH8WvkGWLTo1P5M0s3AhRatQdKGuhzRz00ZmkjGZgnXlVh_TJ3GkfQDhXA5cPg4cDkJnlIwpkfySjvOJKrhSe2hAiSqyiRBkHw0IYTRTxaQ4REcpvRJCqeLFAH3fWAumSzhYvITYaO_WDda-wt51MSzBY-dNiG2IunPB414mblKn69p97F4WP2RVaKHCM2Dn708L9gwCD99_Pr-u-iMXdIS7lfPYurpJ2IaI25VOkJmV9kvADTQhbk7QgdV1gtOdH6OX25vn6V02f5zdT6_nmeGcdJlRFkASpq3OC26VEn1jVsl8oS0XQuYAmrCF1VLkIHOpLbOGUr4QleKyb32MhtvcNoa3NaSubFwyUNfaQ1inksoJFbQP-gfKGWesEAXt0dEWNTGkFMGWbXSNjpuSkvJvmpKWu2n4L7FlgjQ</recordid><startdate>20130128</startdate><enddate>20130128</enddate><creator>Cheng, Limin</creator><creator>Wu, Liangcai</creator><creator>Song, Zhitang</creator><creator>Rao, Feng</creator><creator>Peng, Cheng</creator><creator>Yao, Dongning</creator><creator>Liu, Bo</creator><creator>Xu, Ling</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20130128</creationdate><title>Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x = 0,1) thin films for phase-change memory</title><author>Cheng, Limin ; Wu, Liangcai ; Song, Zhitang ; Rao, Feng ; Peng, Cheng ; Yao, Dongning ; Liu, Bo ; Xu, Ling</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c330t-c8fee602afa493f8854782d64baf35564eea02bfa654e646af2fc113b5d836183</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Crystal structure</topic><topic>Crystallization</topic><topic>Diffraction</topic><topic>Energy gaps (solid state)</topic><topic>Face centered cubic lattice</topic><topic>Nitrides</topic><topic>Phase transformations</topic><topic>Thin films</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cheng, Limin</creatorcontrib><creatorcontrib>Wu, Liangcai</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Rao, Feng</creatorcontrib><creatorcontrib>Peng, Cheng</creatorcontrib><creatorcontrib>Yao, Dongning</creatorcontrib><creatorcontrib>Liu, Bo</creatorcontrib><creatorcontrib>Xu, Ling</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cheng, Limin</au><au>Wu, Liangcai</au><au>Song, Zhitang</au><au>Rao, Feng</au><au>Peng, Cheng</au><au>Yao, Dongning</au><au>Liu, Bo</au><au>Xu, Ling</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x = 0,1) thin films for phase-change memory</atitle><jtitle>Journal of applied physics</jtitle><date>2013-01-28</date><risdate>2013</risdate><volume>113</volume><issue>4</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The phase-change behavior and microstructure changes of N-doped Ge3Sb2Te5 [N-GST(3/2/5)] and Ge2Sb2Te5 [GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption.</abstract><doi>10.1063/1.4789388</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2013-01, Vol.113 (4) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1671515648 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Crystal structure Crystallization Diffraction Energy gaps (solid state) Face centered cubic lattice Nitrides Phase transformations Thin films X-rays |
| title | Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x = 0,1) thin films for phase-change memory |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T07%3A11%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20germanium%20and%20nitrogen%20incorporation%20on%20crystallization%20of%20N-doped%20Ge2+xSb2Te5%20(x%E2%80%89=%E2%80%890,1)%20thin%20films%20for%20phase-change%20memory&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Cheng,%20Limin&rft.date=2013-01-28&rft.volume=113&rft.issue=4&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4789388&rft_dat=%3Cproquest_cross%3E1671515648%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1323229591&rft_id=info:pmid/&rfr_iscdi=true |