Limitations of Near Edge X-ray Absorption Fine Structure as a tool for observing conduction bands in chalcopyrite solar cell heterojunctions

► Near Edge X-ray Absorption Fine Structure investigated as tool for probing the conduction band in Cu(In,Ga)S2. ► Absorption edge of anion contains most pertinent electronic information. ► Development of Cu(In,Ga)2 band gap with increased Ga content reflected in anion absorption edge positions. ► C...

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Veröffentlicht in:	Journal of electron spectroscopy and related phenomena 2013-10, Vol.190, p.42-46
Hauptverfasser:	Johnson, Benjamin, Klaer, Jo, Merdes, Saoussen, Gorgoi, Mihaela, Höpfner, Britta, Vollmer, Antje, Lauermann, Iver
Format:	Artikel
Sprache:	eng
Schlagworte:	Anion Band alignment Chalcopyrite Conduction band Cu(In,Ga)S2 Density of states Fine structure Gallium IPES NEXAFS Photovoltaic cells Solar cells Synchrotron X-rays
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