Characterization of a power bipolar transistor as high-dose dosimeter for 1.9–2.2 MeV electron beams

Results of the characterization studies on a power bipolar transistor investigated as a possible radiation dosimeter under laboratory condition using electron beams of energies from 2.2 to 8.6 MeV and gamma rays from a 60Co source and tested in industrial irradiation plants having high-activity 60Co...

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Veröffentlicht in:	Radiation physics and chemistry (Oxford, England : 1993) England : 1993), 2010-04, Vol.79 (4), p.513-518
Hauptverfasser:	Fuochi, P.G., Lavalle, M., Corda, U., Kuntz, F., Plumeri, S., Gombia, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bipolar transistor Bipolar transistors Devices Dosimeters Dosimetry Electron beams Electron irradiation Energy use Irradiation Power plants Recombination center Semiconductor devices
Online-Zugang:	Volltext
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