Characterization of metallic electrical contacts to SnO2 thin films lightly doped with Eu3+ ions, and photo-induced resistivity

Lightly Eu3+-doped (0.05%) SnO2 thin films are deposited by the sol–gel-dip-coating technique, topped by alternative metallic layers of Al, Sn or In, arranged in a parallel layout on the thin film surface, and deposited by the resistive evaporation technique. Electrical characterization results show...

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Veröffentlicht in:	Materials chemistry and physics 2012-06, Vol.134 (2-3), p.994-1000
Hauptverfasser:	da Silva, Vitor D.L., de Andrade, Aloisio, Scalvi, Luis V.A., Floriano, Emerson A., Maciel, Jorge L.B., Ravaro, Leandro P., Santos, Julio C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Deposition Devices Electrical junctions Electrical properties Electrical resistivity Interfaces Sol–gel growth Thin films Tin Tin dioxide Tin oxides
Online-Zugang:	Volltext
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