Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si
The role of 3C-SiC intermediate layers in III-nitride crystal growth has been studied by observing III-nitride epilayers grown on Si substrates. We found that better quality epilayers were obtained by using such intermediate layers than by direct growth on Si substrates. In the case of III-nitride e...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 2011-03, Vol.318 (1), p.460-463 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 463 |
|---|---|
| container_issue | 1 |
| container_start_page | 460 |
| container_title | Journal of crystal growth |
| container_volume | 318 |
| creator | Abe, Yoshihisa Ohmori, Noriko Watanabe, Arata Komiyama, Jun Suzuki, Syunichi Fujimori, Hiroyuki Nakanishi, Hideo Egawa, Takashi |
| description | The role of 3C-SiC intermediate layers in III-nitride crystal growth has been studied by observing III-nitride epilayers grown on Si substrates. We found that better quality epilayers were obtained by using such intermediate layers than by direct growth on Si substrates. In the case of III-nitride epilayers grown directly on Si, the layers grown at the initial stage are not flat. High-resolution transmission electron microscopy observations showed that a non-crystalline layer exists at the interface between the AlN layer and the Si substrate. Thus, the initial growth of III-nitride becomes disordered. On the other hand, the interface between 3C-SiC and the AlN layer is atomically flat, and there is no non-crystalline layer present. We concluded that III-nitride epilayers on Si substrates with 3C-SiC intermediate layers are promising for the fabrication of vertical devices. |
| doi_str_mv | 10.1016/j.jcrysgro.2010.10.179 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671484050</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024810009395</els_id><sourcerecordid>1671484050</sourcerecordid><originalsourceid>FETCH-LOGICAL-c441t-5003683143ea0db21d9a42a65103ddfc3ee9292314ed0cda5c41deb6f0ab51dd3</originalsourceid><addsrcrecordid>eNqFkE9LAzEQxYMoWKtfQXIRvOw6yWb_3ZRFa6EgWD2HNJnVLNtNTbZKv727tnr1MgPD782beYRcMogZsOymiRvtd-HNu5jDzzBmeXlEJqzIkygF4MdkMlQeARfFKTkLoQEYlAwmZPbsWqSupkkVLW1FbdejX6Oxqkfaqh36QGvn6Xw-jzrbe2uQjm69aung-NW_U9fRpT0nJ7VqA14c-pS8Pty_VI_R4mk2r-4WkRaC9eM1SVYkTCSowKw4M6USXGUpg8SYWieIJS_5AKABbVSqBTO4ympQq5QZk0zJ9X7vxruPLYZerm3Q2LaqQ7cNkmU5E4WAFAY026PauxA81nLj7Vr5nWQgx-RkI3-Tk2NyP_O8HIRXBw8VtGprrzptw5-aC-CpKEbuds_h8PCnRS-DttjpIT2PupfG2f-svgGFjIbL</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671484050</pqid></control><display><type>article</type><title>Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si</title><source>Elsevier ScienceDirect Journals</source><creator>Abe, Yoshihisa ; Ohmori, Noriko ; Watanabe, Arata ; Komiyama, Jun ; Suzuki, Syunichi ; Fujimori, Hiroyuki ; Nakanishi, Hideo ; Egawa, Takashi</creator><creatorcontrib>Abe, Yoshihisa ; Ohmori, Noriko ; Watanabe, Arata ; Komiyama, Jun ; Suzuki, Syunichi ; Fujimori, Hiroyuki ; Nakanishi, Hideo ; Egawa, Takashi</creatorcontrib><description>The role of 3C-SiC intermediate layers in III-nitride crystal growth has been studied by observing III-nitride epilayers grown on Si substrates. We found that better quality epilayers were obtained by using such intermediate layers than by direct growth on Si substrates. In the case of III-nitride epilayers grown directly on Si, the layers grown at the initial stage are not flat. High-resolution transmission electron microscopy observations showed that a non-crystalline layer exists at the interface between the AlN layer and the Si substrate. Thus, the initial growth of III-nitride becomes disordered. On the other hand, the interface between 3C-SiC and the AlN layer is atomically flat, and there is no non-crystalline layer present. We concluded that III-nitride epilayers on Si substrates with 3C-SiC intermediate layers are promising for the fabrication of vertical devices.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2010.10.179</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Crystal structure ; A3. Metal–organic chemical vapor deposition ; Aluminum nitride ; B1. Nitrides ; B1. Semiconducting III–V materials ; B1. Semiconducting silicon compounds ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Devices ; Electron microscopy ; Exact sciences and technology ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Silicon ; Silicon substrates ; Structure of solids and liquids; crystallography ; Structure of specific crystalline solids ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Journal of crystal growth, 2011-03, Vol.318 (1), p.460-463</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c441t-5003683143ea0db21d9a42a65103ddfc3ee9292314ed0cda5c41deb6f0ab51dd3</citedby><cites>FETCH-LOGICAL-c441t-5003683143ea0db21d9a42a65103ddfc3ee9292314ed0cda5c41deb6f0ab51dd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024810009395$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24025489$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Abe, Yoshihisa</creatorcontrib><creatorcontrib>Ohmori, Noriko</creatorcontrib><creatorcontrib>Watanabe, Arata</creatorcontrib><creatorcontrib>Komiyama, Jun</creatorcontrib><creatorcontrib>Suzuki, Syunichi</creatorcontrib><creatorcontrib>Fujimori, Hiroyuki</creatorcontrib><creatorcontrib>Nakanishi, Hideo</creatorcontrib><creatorcontrib>Egawa, Takashi</creatorcontrib><title>Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si</title><title>Journal of crystal growth</title><description>The role of 3C-SiC intermediate layers in III-nitride crystal growth has been studied by observing III-nitride epilayers grown on Si substrates. We found that better quality epilayers were obtained by using such intermediate layers than by direct growth on Si substrates. In the case of III-nitride epilayers grown directly on Si, the layers grown at the initial stage are not flat. High-resolution transmission electron microscopy observations showed that a non-crystalline layer exists at the interface between the AlN layer and the Si substrate. Thus, the initial growth of III-nitride becomes disordered. On the other hand, the interface between 3C-SiC and the AlN layer is atomically flat, and there is no non-crystalline layer present. We concluded that III-nitride epilayers on Si substrates with 3C-SiC intermediate layers are promising for the fabrication of vertical devices.</description><subject>A1. Crystal structure</subject><subject>A3. Metal–organic chemical vapor deposition</subject><subject>Aluminum nitride</subject><subject>B1. Nitrides</subject><subject>B1. Semiconducting III–V materials</subject><subject>B1. Semiconducting silicon compounds</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Devices</subject><subject>Electron microscopy</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Structure of specific crystalline solids</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LAzEQxYMoWKtfQXIRvOw6yWb_3ZRFa6EgWD2HNJnVLNtNTbZKv727tnr1MgPD782beYRcMogZsOymiRvtd-HNu5jDzzBmeXlEJqzIkygF4MdkMlQeARfFKTkLoQEYlAwmZPbsWqSupkkVLW1FbdejX6Oxqkfaqh36QGvn6Xw-jzrbe2uQjm69aung-NW_U9fRpT0nJ7VqA14c-pS8Pty_VI_R4mk2r-4WkRaC9eM1SVYkTCSowKw4M6USXGUpg8SYWieIJS_5AKABbVSqBTO4ympQq5QZk0zJ9X7vxruPLYZerm3Q2LaqQ7cNkmU5E4WAFAY026PauxA81nLj7Vr5nWQgx-RkI3-Tk2NyP_O8HIRXBw8VtGprrzptw5-aC-CpKEbuds_h8PCnRS-DttjpIT2PupfG2f-svgGFjIbL</recordid><startdate>20110301</startdate><enddate>20110301</enddate><creator>Abe, Yoshihisa</creator><creator>Ohmori, Noriko</creator><creator>Watanabe, Arata</creator><creator>Komiyama, Jun</creator><creator>Suzuki, Syunichi</creator><creator>Fujimori, Hiroyuki</creator><creator>Nakanishi, Hideo</creator><creator>Egawa, Takashi</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110301</creationdate><title>Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si</title><author>Abe, Yoshihisa ; Ohmori, Noriko ; Watanabe, Arata ; Komiyama, Jun ; Suzuki, Syunichi ; Fujimori, Hiroyuki ; Nakanishi, Hideo ; Egawa, Takashi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c441t-5003683143ea0db21d9a42a65103ddfc3ee9292314ed0cda5c41deb6f0ab51dd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>A1. Crystal structure</topic><topic>A3. Metal–organic chemical vapor deposition</topic><topic>Aluminum nitride</topic><topic>B1. Nitrides</topic><topic>B1. Semiconducting III–V materials</topic><topic>B1. Semiconducting silicon compounds</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Devices</topic><topic>Electron microscopy</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Structure of specific crystalline solids</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Abe, Yoshihisa</creatorcontrib><creatorcontrib>Ohmori, Noriko</creatorcontrib><creatorcontrib>Watanabe, Arata</creatorcontrib><creatorcontrib>Komiyama, Jun</creatorcontrib><creatorcontrib>Suzuki, Syunichi</creatorcontrib><creatorcontrib>Fujimori, Hiroyuki</creatorcontrib><creatorcontrib>Nakanishi, Hideo</creatorcontrib><creatorcontrib>Egawa, Takashi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Abe, Yoshihisa</au><au>Ohmori, Noriko</au><au>Watanabe, Arata</au><au>Komiyama, Jun</au><au>Suzuki, Syunichi</au><au>Fujimori, Hiroyuki</au><au>Nakanishi, Hideo</au><au>Egawa, Takashi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si</atitle><jtitle>Journal of crystal growth</jtitle><date>2011-03-01</date><risdate>2011</risdate><volume>318</volume><issue>1</issue><spage>460</spage><epage>463</epage><pages>460-463</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The role of 3C-SiC intermediate layers in III-nitride crystal growth has been studied by observing III-nitride epilayers grown on Si substrates. We found that better quality epilayers were obtained by using such intermediate layers than by direct growth on Si substrates. In the case of III-nitride epilayers grown directly on Si, the layers grown at the initial stage are not flat. High-resolution transmission electron microscopy observations showed that a non-crystalline layer exists at the interface between the AlN layer and the Si substrate. Thus, the initial growth of III-nitride becomes disordered. On the other hand, the interface between 3C-SiC and the AlN layer is atomically flat, and there is no non-crystalline layer present. We concluded that III-nitride epilayers on Si substrates with 3C-SiC intermediate layers are promising for the fabrication of vertical devices.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2010.10.179</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2011-03, Vol.318 (1), p.460-463 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1671484050 |
| source | Elsevier ScienceDirect Journals |
| subjects | A1. Crystal structure A3. Metal–organic chemical vapor deposition Aluminum nitride B1. Nitrides B1. Semiconducting III–V materials B1. Semiconducting silicon compounds Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal growth Devices Electron microscopy Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Silicon Silicon substrates Structure of solids and liquids crystallography Structure of specific crystalline solids Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T18%3A56%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Role%20of%203C-SiC%20intermediate%20layers%20for%20III-nitride%20crystal%20growth%20on%20Si&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Abe,%20Yoshihisa&rft.date=2011-03-01&rft.volume=318&rft.issue=1&rft.spage=460&rft.epage=463&rft.pages=460-463&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2010.10.179&rft_dat=%3Cproquest_cross%3E1671484050%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671484050&rft_id=info:pmid/&rft_els_id=S0022024810009395&rfr_iscdi=true |