Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175-525°C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is...

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Veröffentlicht in:	Journal of applied physics 2012-05, Vol.111 (9), p.094910-094910-8
Hauptverfasser:	Johnson, B. C., Villis, B. J., Burgess, J. E., Stavrias, N., McCallum, J. C., Charnvanichborikarn, S., Wong-Leung, J., Jagadish, C., Williams, J. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Dopants Evolution Gallium Implantation Photoluminescence Splitting Strain
Online-Zugang:	Volltext
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