Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175-525°C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is...
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| Veröffentlicht in: | Journal of applied physics 2012-05, Vol.111 (9), p.094910-094910-8 |
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| container_end_page | 094910-8 |
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| container_issue | 9 |
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| container_title | Journal of applied physics |
| container_volume | 111 |
| creator | Johnson, B. C. Villis, B. J. Burgess, J. E. Stavrias, N. McCallum, J. C. Charnvanichborikarn, S. Wong-Leung, J. Jagadish, C. Williams, J. S. |
| description | The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175-525°C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in samples implanted with either P or Ga. The anneal temperature at which the W line intensity is optimized is sensitive to the dopant concentration and type. Furthermore, dopants which are implanted but not activated prior to low temperature thermal processing are found to have a more detrimental effect on the resulting PL. Splitting of the X line (1039.8meV) arising from implantation damage induced strain is also observed. |
| doi_str_mv | 10.1063/1.4710991 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671479762</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1671479762</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-12f67009884e6eb1c0e1af9037820fdac94b965f92090d725ea6667526c79023</originalsourceid><addsrcrecordid>eNqNkE1LxDAQhoMouK4e_Ac96qE6k7RJcxHEb1jw4j3G7ISNtE1tsgf_vZHdq-BpYN5nXoaHsXOEKwQprvGqUQha4wFbIHS6Vm0Lh2wBwLHutNLH7CSlTwDETugFe7-Pkx1zRd6Ty6mKY5U3VE2bmGO_HcJIydHoqIq-CmOmOeWQg-3rmXqbaV2V9HdbwiqU4zBMfekrQQp9cHE8ZUfe9onO9nPJ3h4f3u6e69Xr08vd7ap2omtzjdxLBaC7riFJH-iA0HoNQnUc_No63Xxo2XrNQcNa8ZaslFK1XDqlgYslu9jVTnP82lLKZgjl8748Q3GbDEqFjdJK_gMVXHBssBEFvdyhbo4pzeTNNIfBzt8Gwfz6Nmj2vgt7s2OTC9nmIuNveCfd7KWbguaN-AG0E4eN</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1323214143</pqid></control><display><type>article</type><title>Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Johnson, B. C. ; Villis, B. J. ; Burgess, J. E. ; Stavrias, N. ; McCallum, J. C. ; Charnvanichborikarn, S. ; Wong-Leung, J. ; Jagadish, C. ; Williams, J. S.</creator><creatorcontrib>Johnson, B. C. ; Villis, B. J. ; Burgess, J. E. ; Stavrias, N. ; McCallum, J. C. ; Charnvanichborikarn, S. ; Wong-Leung, J. ; Jagadish, C. ; Williams, J. S.</creatorcontrib><description>The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175-525°C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in samples implanted with either P or Ga. The anneal temperature at which the W line intensity is optimized is sensitive to the dopant concentration and type. Furthermore, dopants which are implanted but not activated prior to low temperature thermal processing are found to have a more detrimental effect on the resulting PL. Splitting of the X line (1039.8meV) arising from implantation damage induced strain is also observed.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4710991</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Annealing ; Dopants ; Evolution ; Gallium ; Implantation ; Photoluminescence ; Splitting ; Strain</subject><ispartof>Journal of applied physics, 2012-05, Vol.111 (9), p.094910-094910-8</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-12f67009884e6eb1c0e1af9037820fdac94b965f92090d725ea6667526c79023</citedby><cites>FETCH-LOGICAL-c385t-12f67009884e6eb1c0e1af9037820fdac94b965f92090d725ea6667526c79023</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4710991$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27903,27904,76130,76136</link.rule.ids></links><search><creatorcontrib>Johnson, B. C.</creatorcontrib><creatorcontrib>Villis, B. J.</creatorcontrib><creatorcontrib>Burgess, J. E.</creatorcontrib><creatorcontrib>Stavrias, N.</creatorcontrib><creatorcontrib>McCallum, J. C.</creatorcontrib><creatorcontrib>Charnvanichborikarn, S.</creatorcontrib><creatorcontrib>Wong-Leung, J.</creatorcontrib><creatorcontrib>Jagadish, C.</creatorcontrib><creatorcontrib>Williams, J. S.</creatorcontrib><title>Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon</title><title>Journal of applied physics</title><description>The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175-525°C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in samples implanted with either P or Ga. The anneal temperature at which the W line intensity is optimized is sensitive to the dopant concentration and type. Furthermore, dopants which are implanted but not activated prior to low temperature thermal processing are found to have a more detrimental effect on the resulting PL. Splitting of the X line (1039.8meV) arising from implantation damage induced strain is also observed.</description><subject>Annealing</subject><subject>Dopants</subject><subject>Evolution</subject><subject>Gallium</subject><subject>Implantation</subject><subject>Photoluminescence</subject><subject>Splitting</subject><subject>Strain</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LxDAQhoMouK4e_Ac96qE6k7RJcxHEb1jw4j3G7ISNtE1tsgf_vZHdq-BpYN5nXoaHsXOEKwQprvGqUQha4wFbIHS6Vm0Lh2wBwLHutNLH7CSlTwDETugFe7-Pkx1zRd6Ty6mKY5U3VE2bmGO_HcJIydHoqIq-CmOmOeWQg-3rmXqbaV2V9HdbwiqU4zBMfekrQQp9cHE8ZUfe9onO9nPJ3h4f3u6e69Xr08vd7ap2omtzjdxLBaC7riFJH-iA0HoNQnUc_No63Xxo2XrNQcNa8ZaslFK1XDqlgYslu9jVTnP82lLKZgjl8748Q3GbDEqFjdJK_gMVXHBssBEFvdyhbo4pzeTNNIfBzt8Gwfz6Nmj2vgt7s2OTC9nmIuNveCfd7KWbguaN-AG0E4eN</recordid><startdate>20120501</startdate><enddate>20120501</enddate><creator>Johnson, B. C.</creator><creator>Villis, B. J.</creator><creator>Burgess, J. E.</creator><creator>Stavrias, N.</creator><creator>McCallum, J. C.</creator><creator>Charnvanichborikarn, S.</creator><creator>Wong-Leung, J.</creator><creator>Jagadish, C.</creator><creator>Williams, J. S.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QO</scope><scope>8FD</scope><scope>FR3</scope><scope>P64</scope><scope>7U5</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20120501</creationdate><title>Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon</title><author>Johnson, B. C. ; Villis, B. J. ; Burgess, J. E. ; Stavrias, N. ; McCallum, J. C. ; Charnvanichborikarn, S. ; Wong-Leung, J. ; Jagadish, C. ; Williams, J. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-12f67009884e6eb1c0e1af9037820fdac94b965f92090d725ea6667526c79023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Annealing</topic><topic>Dopants</topic><topic>Evolution</topic><topic>Gallium</topic><topic>Implantation</topic><topic>Photoluminescence</topic><topic>Splitting</topic><topic>Strain</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Johnson, B. C.</creatorcontrib><creatorcontrib>Villis, B. J.</creatorcontrib><creatorcontrib>Burgess, J. E.</creatorcontrib><creatorcontrib>Stavrias, N.</creatorcontrib><creatorcontrib>McCallum, J. C.</creatorcontrib><creatorcontrib>Charnvanichborikarn, S.</creatorcontrib><creatorcontrib>Wong-Leung, J.</creatorcontrib><creatorcontrib>Jagadish, C.</creatorcontrib><creatorcontrib>Williams, J. S.</creatorcontrib><collection>CrossRef</collection><collection>Biotechnology Research Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Johnson, B. C.</au><au>Villis, B. J.</au><au>Burgess, J. E.</au><au>Stavrias, N.</au><au>McCallum, J. C.</au><au>Charnvanichborikarn, S.</au><au>Wong-Leung, J.</au><au>Jagadish, C.</au><au>Williams, J. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon</atitle><jtitle>Journal of applied physics</jtitle><date>2012-05-01</date><risdate>2012</risdate><volume>111</volume><issue>9</issue><spage>094910</spage><epage>094910-8</epage><pages>094910-094910-8</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175-525°C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in samples implanted with either P or Ga. The anneal temperature at which the W line intensity is optimized is sensitive to the dopant concentration and type. Furthermore, dopants which are implanted but not activated prior to low temperature thermal processing are found to have a more detrimental effect on the resulting PL. Splitting of the X line (1039.8meV) arising from implantation damage induced strain is also observed.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.4710991</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of applied physics, 2012-05, Vol.111 (9), p.094910-094910-8 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Annealing Dopants Evolution Gallium Implantation Photoluminescence Splitting Strain |
| title | Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T02%3A22%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dopant%20effects%20on%20the%20photoluminescence%20of%20interstitial-related%20centers%20in%20ion%20implanted%20silicon&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Johnson,%20B.%20C.&rft.date=2012-05-01&rft.volume=111&rft.issue=9&rft.spage=094910&rft.epage=094910-8&rft.pages=094910-094910-8&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.4710991&rft_dat=%3Cproquest_cross%3E1671479762%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1323214143&rft_id=info:pmid/&rfr_iscdi=true |