Strain relaxation in GaN nanopillars

In this work, we demonstrate the direct measurement of the strain state at the surface of nanostructures by in-plane X-ray diffraction. GaN tapered nanopillars have been fabricated by dry etching of a highly strained epilayer. The strain of the surface as function of pillar height shows an exponenti...

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Veröffentlicht in:	Applied physics letters 2012-12, Vol.101 (25)
Hauptverfasser:	Tseng, W. J., Gonzalez, M., Dillemans, L., Cheng, K., Jiang, S. J., Vereecken, P. M., Borghs, G., Lieten, R. R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Diffraction Gallium nitrides Nanocomposites Nanomaterials Nanostructure Pillars Strain Strain relaxation
Online-Zugang:	Volltext
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