Phosphorus implanted cadmium telluride solar cells
Polycrystalline cadmium telluride layers were implanted with phosphorus (P) in order to obtain an enhanced p-type doping close to the back contact of CdTe solar cells. The implantation parameters were adjusted based on computer simulations using SRIM. While the implantation profile was kept constant...
Gespeichert in:
| Veröffentlicht in: | Thin solid films 2011-08, Vol.519 (21), p.7153-7155 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 7155 |
|---|---|
| container_issue | 21 |
| container_start_page | 7153 |
| container_title | Thin solid films |
| container_volume | 519 |
| creator | Kraft, C. Brömel, A. Schönherr, S. Hädrich, M. Reislöhner, U. Schley, P. Gobsch, G. Goldhahn, R. Wesch, W. Metzner, H. |
| description | Polycrystalline cadmium telluride layers were implanted with phosphorus (P) in order to obtain an enhanced p-type doping close to the back contact of CdTe solar cells. The implantation parameters were adjusted based on computer simulations using SRIM. While the implantation profile was kept constant, different CdTe layer thicknesses were investigated. Furthermore, different annealing and activation processes and their influence on the P distribution in the device as well as ion beam induced damage were investigated. The P level was identified by photoluminescence measurements, the effective doping was investigated by means of capacitance–voltage measurements, and the effect on the solar cell properties was analyzed by current voltage characteristics. The results show the P distribution in the CdTe layer to depend strongly on the thermal and chemical post-implantation treatment. The effect of the P-doping on the solar cell properties becomes obvious by an increase of the open-circuit voltage due to the implantation. |
| doi_str_mv | 10.1016/j.tsf.2011.01.389 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671443927</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609011004573</els_id><sourcerecordid>1671443927</sourcerecordid><originalsourceid>FETCH-LOGICAL-c360t-248855a8acfc29dfe20b0d1df5d3f3bc56f79abafa774b449c027df29ac327263</originalsourceid><addsrcrecordid>eNp9kElLxEAQhRtRcBz9Ad5yEbwkVi9Jp_EkgxsM6EHPTacXpocsY1ci-O_NMINHT0XBe6_qfYRcUygo0OpuW4wYCgaUFkALXqsTsqC1VDmTnJ6SBYCAvAIF5-QCcQsAlDG-IOx9M-BuM6QJs9jtWtOP3mXWuC5OXTb6tp1SdD7DoTUps_OOl-QsmBb91XEuyefT48fqJV-_Pb-uHta55RWMORN1XZamNjZYplzwDBpw1IXS8cAbW1ZBKtOYYKQUjRDKApMuMGUsZ5JVfEluD7m7NHxNHkfdRdx_YHo_TKhpJakQXM0Nl4QepDYNiMkHvUuxM-lHU9B7PnqrZz56z0cD1TOf2XNzjDdoTRuS6W3EPyMTJa_KUsy6-4POz12_o08abfS99S4mb0fthvjPlV9w7Hrm</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671443927</pqid></control><display><type>article</type><title>Phosphorus implanted cadmium telluride solar cells</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Kraft, C. ; Brömel, A. ; Schönherr, S. ; Hädrich, M. ; Reislöhner, U. ; Schley, P. ; Gobsch, G. ; Goldhahn, R. ; Wesch, W. ; Metzner, H.</creator><creatorcontrib>Kraft, C. ; Brömel, A. ; Schönherr, S. ; Hädrich, M. ; Reislöhner, U. ; Schley, P. ; Gobsch, G. ; Goldhahn, R. ; Wesch, W. ; Metzner, H.</creatorcontrib><description>Polycrystalline cadmium telluride layers were implanted with phosphorus (P) in order to obtain an enhanced p-type doping close to the back contact of CdTe solar cells. The implantation parameters were adjusted based on computer simulations using SRIM. While the implantation profile was kept constant, different CdTe layer thicknesses were investigated. Furthermore, different annealing and activation processes and their influence on the P distribution in the device as well as ion beam induced damage were investigated. The P level was identified by photoluminescence measurements, the effective doping was investigated by means of capacitance–voltage measurements, and the effect on the solar cell properties was analyzed by current voltage characteristics. The results show the P distribution in the CdTe layer to depend strongly on the thermal and chemical post-implantation treatment. The effect of the P-doping on the solar cell properties becomes obvious by an increase of the open-circuit voltage due to the implantation.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2011.01.389</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Cadmium ; Cadmium tellurides ; CdTe ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Doping ; Energy ; Exact sciences and technology ; Implantation ; Intermetallics ; Ion implantation ; Materials science ; Natural energy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other semiconductors ; Phosphorus ; Photoluminescence ; Photovoltaic cells ; Photovoltaic conversion ; Physics ; Solar cells ; Solar cells. Photoelectrochemical cells ; Solar energy ; Specific materials ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Thin solid films, 2011-08, Vol.519 (21), p.7153-7155</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-248855a8acfc29dfe20b0d1df5d3f3bc56f79abafa774b449c027df29ac327263</citedby><cites>FETCH-LOGICAL-c360t-248855a8acfc29dfe20b0d1df5d3f3bc56f79abafa774b449c027df29ac327263</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2011.01.389$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24536554$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kraft, C.</creatorcontrib><creatorcontrib>Brömel, A.</creatorcontrib><creatorcontrib>Schönherr, S.</creatorcontrib><creatorcontrib>Hädrich, M.</creatorcontrib><creatorcontrib>Reislöhner, U.</creatorcontrib><creatorcontrib>Schley, P.</creatorcontrib><creatorcontrib>Gobsch, G.</creatorcontrib><creatorcontrib>Goldhahn, R.</creatorcontrib><creatorcontrib>Wesch, W.</creatorcontrib><creatorcontrib>Metzner, H.</creatorcontrib><title>Phosphorus implanted cadmium telluride solar cells</title><title>Thin solid films</title><description>Polycrystalline cadmium telluride layers were implanted with phosphorus (P) in order to obtain an enhanced p-type doping close to the back contact of CdTe solar cells. The implantation parameters were adjusted based on computer simulations using SRIM. While the implantation profile was kept constant, different CdTe layer thicknesses were investigated. Furthermore, different annealing and activation processes and their influence on the P distribution in the device as well as ion beam induced damage were investigated. The P level was identified by photoluminescence measurements, the effective doping was investigated by means of capacitance–voltage measurements, and the effect on the solar cell properties was analyzed by current voltage characteristics. The results show the P distribution in the CdTe layer to depend strongly on the thermal and chemical post-implantation treatment. The effect of the P-doping on the solar cell properties becomes obvious by an increase of the open-circuit voltage due to the implantation.</description><subject>Applied sciences</subject><subject>Cadmium</subject><subject>Cadmium tellurides</subject><subject>CdTe</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Doping</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Implantation</subject><subject>Intermetallics</subject><subject>Ion implantation</subject><subject>Materials science</subject><subject>Natural energy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other semiconductors</subject><subject>Phosphorus</subject><subject>Photoluminescence</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>Solar cells</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Specific materials</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kElLxEAQhRtRcBz9Ad5yEbwkVi9Jp_EkgxsM6EHPTacXpocsY1ci-O_NMINHT0XBe6_qfYRcUygo0OpuW4wYCgaUFkALXqsTsqC1VDmTnJ6SBYCAvAIF5-QCcQsAlDG-IOx9M-BuM6QJs9jtWtOP3mXWuC5OXTb6tp1SdD7DoTUps_OOl-QsmBb91XEuyefT48fqJV-_Pb-uHta55RWMORN1XZamNjZYplzwDBpw1IXS8cAbW1ZBKtOYYKQUjRDKApMuMGUsZ5JVfEluD7m7NHxNHkfdRdx_YHo_TKhpJakQXM0Nl4QepDYNiMkHvUuxM-lHU9B7PnqrZz56z0cD1TOf2XNzjDdoTRuS6W3EPyMTJa_KUsy6-4POz12_o08abfS99S4mb0fthvjPlV9w7Hrm</recordid><startdate>20110831</startdate><enddate>20110831</enddate><creator>Kraft, C.</creator><creator>Brömel, A.</creator><creator>Schönherr, S.</creator><creator>Hädrich, M.</creator><creator>Reislöhner, U.</creator><creator>Schley, P.</creator><creator>Gobsch, G.</creator><creator>Goldhahn, R.</creator><creator>Wesch, W.</creator><creator>Metzner, H.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110831</creationdate><title>Phosphorus implanted cadmium telluride solar cells</title><author>Kraft, C. ; Brömel, A. ; Schönherr, S. ; Hädrich, M. ; Reislöhner, U. ; Schley, P. ; Gobsch, G. ; Goldhahn, R. ; Wesch, W. ; Metzner, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-248855a8acfc29dfe20b0d1df5d3f3bc56f79abafa774b449c027df29ac327263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Cadmium</topic><topic>Cadmium tellurides</topic><topic>CdTe</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Doping</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Implantation</topic><topic>Intermetallics</topic><topic>Ion implantation</topic><topic>Materials science</topic><topic>Natural energy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Other semiconductors</topic><topic>Phosphorus</topic><topic>Photoluminescence</topic><topic>Photovoltaic cells</topic><topic>Photovoltaic conversion</topic><topic>Physics</topic><topic>Solar cells</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Specific materials</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kraft, C.</creatorcontrib><creatorcontrib>Brömel, A.</creatorcontrib><creatorcontrib>Schönherr, S.</creatorcontrib><creatorcontrib>Hädrich, M.</creatorcontrib><creatorcontrib>Reislöhner, U.</creatorcontrib><creatorcontrib>Schley, P.</creatorcontrib><creatorcontrib>Gobsch, G.</creatorcontrib><creatorcontrib>Goldhahn, R.</creatorcontrib><creatorcontrib>Wesch, W.</creatorcontrib><creatorcontrib>Metzner, H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kraft, C.</au><au>Brömel, A.</au><au>Schönherr, S.</au><au>Hädrich, M.</au><au>Reislöhner, U.</au><au>Schley, P.</au><au>Gobsch, G.</au><au>Goldhahn, R.</au><au>Wesch, W.</au><au>Metzner, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Phosphorus implanted cadmium telluride solar cells</atitle><jtitle>Thin solid films</jtitle><date>2011-08-31</date><risdate>2011</risdate><volume>519</volume><issue>21</issue><spage>7153</spage><epage>7155</epage><pages>7153-7155</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Polycrystalline cadmium telluride layers were implanted with phosphorus (P) in order to obtain an enhanced p-type doping close to the back contact of CdTe solar cells. The implantation parameters were adjusted based on computer simulations using SRIM. While the implantation profile was kept constant, different CdTe layer thicknesses were investigated. Furthermore, different annealing and activation processes and their influence on the P distribution in the device as well as ion beam induced damage were investigated. The P level was identified by photoluminescence measurements, the effective doping was investigated by means of capacitance–voltage measurements, and the effect on the solar cell properties was analyzed by current voltage characteristics. The results show the P distribution in the CdTe layer to depend strongly on the thermal and chemical post-implantation treatment. The effect of the P-doping on the solar cell properties becomes obvious by an increase of the open-circuit voltage due to the implantation.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2011.01.389</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2011-08, Vol.519 (21), p.7153-7155 |
| issn | 0040-6090 1879-2731 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1671443927 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Applied sciences Cadmium Cadmium tellurides CdTe Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Doping Energy Exact sciences and technology Implantation Intermetallics Ion implantation Materials science Natural energy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other semiconductors Phosphorus Photoluminescence Photovoltaic cells Photovoltaic conversion Physics Solar cells Solar cells. Photoelectrochemical cells Solar energy Specific materials Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Phosphorus implanted cadmium telluride solar cells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T09%3A53%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Phosphorus%20implanted%20cadmium%20telluride%20solar%20cells&rft.jtitle=Thin%20solid%20films&rft.au=Kraft,%20C.&rft.date=2011-08-31&rft.volume=519&rft.issue=21&rft.spage=7153&rft.epage=7155&rft.pages=7153-7155&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/j.tsf.2011.01.389&rft_dat=%3Cproquest_cross%3E1671443927%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671443927&rft_id=info:pmid/&rft_els_id=S0040609011004573&rfr_iscdi=true |