Micro-Raman analysis of GaAs Schottky barrier solar cell

Gallium arsenide (GaAs) cells have been in the race with silicon single‐crystal cells for the highest efficiency photovoltaic devices. The annealed, irradiated Schottky barrier (SB) solar cells were characterised using micro‐Raman spectroscopy at three different regions: namely, at the (1) ohmic con...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of Raman spectroscopy 2011-03, Vol.42 (3), p.422-428
Hauptverfasser:	Jothilakshmi, R., Ramakrishnan, V., Kumar, J., Sarua, Andrei, Kuball, Martin
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Barriers biaxial stress carrier concentration depletion length dislocation velocity Gallium arsenide Gallium arsenides Irradiation micro-Raman spectra phonon life time Phonons Photovoltaic cells Schottky barrier solar cells Solar cells Solar energy Spectrum analysis
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!