Design of hemispherical cavities for LED-based illumination devices
We present the design procedure for an illumination system based on the association of several emitting diodes in optical cavities with a hemispherical shape. The main purpose of this illumination system is to provide high amounts of monochromatic light over small areas, thus making it adequate for...
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| Veröffentlicht in: | Applied physics. B, Lasers and optics Lasers and optics, 2006, Vol.82 (1), p.75-80 |
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| container_title | Applied physics. B, Lasers and optics |
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| creator | BALENZATEGUI, J. L MARTI, A |
| description | We present the design procedure for an illumination system based on the association of several emitting diodes in optical cavities with a hemispherical shape. The main purpose of this illumination system is to provide high amounts of monochromatic light over small areas, thus making it adequate for testing radiation-sensing devices. A detailed methodology for the optimization of the optical system, by taking into account both the electro-optical properties of the emitting diodes and the geometry of the cavity, is described. The irradiance on the working plane is increased by using a pulsed current operation mode at low duty cycles for light emitting diodes. The performance of two illumination devices designed with this methodology has been tested through the measurement of some concentrator GaAs solar cells. Current densities up to 5 A/cm have been obtained in these cells with a cavity based on infrared emitting diodes. |
| doi_str_mv | 10.1007/s00340-005-1985-0 |
| format | Article |
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L ; MARTI, A</creator><creatorcontrib>BALENZATEGUI, J. L ; MARTI, A</creatorcontrib><description>We present the design procedure for an illumination system based on the association of several emitting diodes in optical cavities with a hemispherical shape. The main purpose of this illumination system is to provide high amounts of monochromatic light over small areas, thus making it adequate for testing radiation-sensing devices. A detailed methodology for the optimization of the optical system, by taking into account both the electro-optical properties of the emitting diodes and the geometry of the cavity, is described. The irradiance on the working plane is increased by using a pulsed current operation mode at low duty cycles for light emitting diodes. The performance of two illumination devices designed with this methodology has been tested through the measurement of some concentrator GaAs solar cells. Current densities up to 5 A/cm have been obtained in these cells with a cavity based on infrared emitting diodes.</description><identifier>ISSN: 0946-2171</identifier><identifier>EISSN: 1432-0649</identifier><identifier>DOI: 10.1007/s00340-005-1985-0</identifier><language>eng</language><publisher>Berlin: Springer</publisher><subject>Applied sciences ; Design engineering ; Devices ; Diodes ; Electronics ; Emittance ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Gallium arsenide ; Geometrical optics ; Holes ; Illumination ; Light-emitting devices ; Methodology ; Optical system design ; Optics ; Optoelectronic device characterization, design, and modeling ; Optoelectronic devices ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Applied physics. 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Current densities up to 5 A/cm have been obtained in these cells with a cavity based on infrared emitting diodes.</description><subject>Applied sciences</subject><subject>Design engineering</subject><subject>Devices</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Emittance</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Gallium arsenide</subject><subject>Geometrical optics</subject><subject>Holes</subject><subject>Illumination</subject><subject>Light-emitting devices</subject><subject>Methodology</subject><subject>Optical system design</subject><subject>Optics</subject><subject>Optoelectronic device characterization, design, and modeling</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| ispartof | Applied physics. B, Lasers and optics, 2006, Vol.82 (1), p.75-80 |
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| language | eng |
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| source | SpringerNature Journals |
| subjects | Applied sciences Design engineering Devices Diodes Electronics Emittance Exact sciences and technology Fundamental areas of phenomenology (including applications) Gallium arsenide Geometrical optics Holes Illumination Light-emitting devices Methodology Optical system design Optics Optoelectronic device characterization, design, and modeling Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Design of hemispherical cavities for LED-based illumination devices |
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