Growth and characterization of transparent conducting nanostructured zinc indium oxide thin films
Transparent conductive oxide (TCO) films have been widely used in various applications, such as for transparent electrodes in flat-panel displays, and in solar cells, optoelectronic devices, touch panels and IR reflectors. Among these, tin doped zinc oxide (ZTO) and indium doped zinc oxide (ZIO) hav...
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description | Transparent conductive oxide (TCO) films have been widely used in various applications, such as for transparent electrodes in flat-panel displays, and in solar cells, optoelectronic devices, touch panels and IR reflectors. Among these, tin doped zinc oxide (ZTO) and indium doped zinc oxide (ZIO) have attracted considerable attention. Particularly, IZO thin film is the best candidate for high-quality transparent conducting electrodes in OLEDs and flexible displays. In this work zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In
2O
3 — 100:0, 90:10, 70:30 and 50:50
wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the physical properties. The XRF spectra revealed the presence of zinc and indium with varying concentration in ZIO thin films, while the surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. The core level spectra were deconvoluted to see the effect of chemical changes, while the valance band spectra manifest the electronic transitions. The surface morphology studies of the films using atomic force microscopy (AFM) revealed the formation of nanostructured ZIO thin films. The optical band gap was also found to be decreased for both types of films with increasing concentration of In
2O
3. |
doi_str_mv | 10.1016/j.tsf.2010.08.048 |
format | Article |
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2O
3 — 100:0, 90:10, 70:30 and 50:50
wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the physical properties. The XRF spectra revealed the presence of zinc and indium with varying concentration in ZIO thin films, while the surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. The core level spectra were deconvoluted to see the effect of chemical changes, while the valance band spectra manifest the electronic transitions. The surface morphology studies of the films using atomic force microscopy (AFM) revealed the formation of nanostructured ZIO thin films. The optical band gap was also found to be decreased for both types of films with increasing concentration of In
2O
3.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2010.08.048</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>AFM ; Annealing ; Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Deposition ; Electrodes ; Electronics ; Energy ; Exact sciences and technology ; Flash evaporation ; Indium ; Indium oxides ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Nanoscale materials and structures: fabrication and characterization ; Nanostructure ; Natural energy ; Optical band gap ; Optoelectronic devices ; Other topics in nanoscale materials and structures ; Photovoltaic conversion ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solar cells. Photoelectrochemical cells ; Solar energy ; Spectra ; Theory and models of film growth ; Thin films ; XPS ; XRF ; Zinc ; ZIO thin film</subject><ispartof>Thin solid films, 2010-11, Vol.519 (3), p.1082-1086</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-4a7a9a7c25806bc17afd88b8d44e2ca6f0464b2c4c9a665031a63f9d37340e143</citedby><cites>FETCH-LOGICAL-c360t-4a7a9a7c25806bc17afd88b8d44e2ca6f0464b2c4c9a665031a63f9d37340e143</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2010.08.048$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,3551,23935,23936,25145,27929,27930,46000</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23779414$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jain, Vipin Kumar</creatorcontrib><creatorcontrib>Kumar, Praveen</creatorcontrib><creatorcontrib>Bhandari, Deepika</creatorcontrib><creatorcontrib>Vijay, Y.K.</creatorcontrib><title>Growth and characterization of transparent conducting nanostructured zinc indium oxide thin films</title><title>Thin solid films</title><description>Transparent conductive oxide (TCO) films have been widely used in various applications, such as for transparent electrodes in flat-panel displays, and in solar cells, optoelectronic devices, touch panels and IR reflectors. Among these, tin doped zinc oxide (ZTO) and indium doped zinc oxide (ZIO) have attracted considerable attention. Particularly, IZO thin film is the best candidate for high-quality transparent conducting electrodes in OLEDs and flexible displays. In this work zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In
2O
3 — 100:0, 90:10, 70:30 and 50:50
wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the physical properties. The XRF spectra revealed the presence of zinc and indium with varying concentration in ZIO thin films, while the surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. The core level spectra were deconvoluted to see the effect of chemical changes, while the valance band spectra manifest the electronic transitions. The surface morphology studies of the films using atomic force microscopy (AFM) revealed the formation of nanostructured ZIO thin films. The optical band gap was also found to be decreased for both types of films with increasing concentration of In
2O
3.</description><subject>AFM</subject><subject>Annealing</subject><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Flash evaporation</subject><subject>Indium</subject><subject>Indium oxides</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanostructure</subject><subject>Natural energy</subject><subject>Optical band gap</subject><subject>Optoelectronic devices</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Spectra</subject><subject>Theory and models of film growth</subject><subject>Thin films</subject><subject>XPS</subject><subject>XRF</subject><subject>Zinc</subject><subject>ZIO thin film</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kM2LFDEQxYMoOK7-Ad5yEbz0WPmYJI0nWXQVFrzoOdRU0k6GnmRM0n7sX2-vs3j0VDx471XVj7GXArYChHlz3PY2bSWsGtwWtHvENsLZcZBWicdsA6BhMDDCU_astSMACCnVhuFNLT_7gWMOnA5YkXqs6Q57KpmXifeKuZ2xxtw5lRwW6il_4xlzab2uaqkx8LuUiacc0nLi5VcKkfdDynxK86k9Z08mnFt88TCv2NcP779cfxxuP998un53O5Ay0AeNFke0JHcOzJ6ExSk4t3dB6ygJzQTa6L0kTSMaswMl0KhpDMoqDVFodcVeX3rPtXxfYuv-lBrFecYcy9K8MFZoqcTOrVZxsVItrdU4-XNNJ6y_vQB_j9Mf_YrT3-P04PyKc828eqjHRjhPKxdK7V9QKmtH_feMtxdfXH_9kWL1jVLMFEOqkboPJf1nyx-rU4ws</recordid><startdate>20101130</startdate><enddate>20101130</enddate><creator>Jain, Vipin Kumar</creator><creator>Kumar, Praveen</creator><creator>Bhandari, Deepika</creator><creator>Vijay, Y.K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20101130</creationdate><title>Growth and characterization of transparent conducting nanostructured zinc indium oxide thin films</title><author>Jain, Vipin Kumar ; Kumar, Praveen ; Bhandari, Deepika ; Vijay, Y.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-4a7a9a7c25806bc17afd88b8d44e2ca6f0464b2c4c9a665031a63f9d37340e143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>AFM</topic><topic>Annealing</topic><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Flash evaporation</topic><topic>Indium</topic><topic>Indium oxides</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanostructure</topic><topic>Natural energy</topic><topic>Optical band gap</topic><topic>Optoelectronic devices</topic><topic>Other topics in nanoscale materials and structures</topic><topic>Photovoltaic conversion</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Spectra</topic><topic>Theory and models of film growth</topic><topic>Thin films</topic><topic>XPS</topic><topic>XRF</topic><topic>Zinc</topic><topic>ZIO thin film</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jain, Vipin Kumar</creatorcontrib><creatorcontrib>Kumar, Praveen</creatorcontrib><creatorcontrib>Bhandari, Deepika</creatorcontrib><creatorcontrib>Vijay, Y.K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jain, Vipin Kumar</au><au>Kumar, Praveen</au><au>Bhandari, Deepika</au><au>Vijay, Y.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and characterization of transparent conducting nanostructured zinc indium oxide thin films</atitle><jtitle>Thin solid films</jtitle><date>2010-11-30</date><risdate>2010</risdate><volume>519</volume><issue>3</issue><spage>1082</spage><epage>1086</epage><pages>1082-1086</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Transparent conductive oxide (TCO) films have been widely used in various applications, such as for transparent electrodes in flat-panel displays, and in solar cells, optoelectronic devices, touch panels and IR reflectors. Among these, tin doped zinc oxide (ZTO) and indium doped zinc oxide (ZIO) have attracted considerable attention. Particularly, IZO thin film is the best candidate for high-quality transparent conducting electrodes in OLEDs and flexible displays. In this work zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In
2O
3 — 100:0, 90:10, 70:30 and 50:50
wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the physical properties. The XRF spectra revealed the presence of zinc and indium with varying concentration in ZIO thin films, while the surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. The core level spectra were deconvoluted to see the effect of chemical changes, while the valance band spectra manifest the electronic transitions. The surface morphology studies of the films using atomic force microscopy (AFM) revealed the formation of nanostructured ZIO thin films. The optical band gap was also found to be decreased for both types of films with increasing concentration of In
2O
3.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2010.08.048</doi><tpages>5</tpages></addata></record> |
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subjects | AFM Annealing Applied sciences Cross-disciplinary physics: materials science rheology Deposition Electrodes Electronics Energy Exact sciences and technology Flash evaporation Indium Indium oxides Materials science Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Nanostructure Natural energy Optical band gap Optoelectronic devices Other topics in nanoscale materials and structures Photovoltaic conversion Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solar cells. Photoelectrochemical cells Solar energy Spectra Theory and models of film growth Thin films XPS XRF Zinc ZIO thin film |
title | Growth and characterization of transparent conducting nanostructured zinc indium oxide thin films |
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