Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array
The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been investigated by high resolution cathodoluminescence (CL) hyperspectral im...
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Veröffentlicht in: | Journal of applied physics 2012-07, Vol.112 (2) |
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creator | Lethy, K. J. Edwards, P. R. Liu, C. Wang, W. N. Martin, R. W. |
description | The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been investigated by high resolution cathodoluminescence (CL) hyperspectral imaging. Plan-view microscopy reveals partially coalesced GaN layers with a sub-μm scale domain structure and distinct grain boundaries, which is mapped using CL spectroscopy showing high strain at the grain boundaries. Cross-sectional areas spanning the partially coalesced GaN and underlying nanocolumns are mapped using CL, revealing that the GaN bandedge peak shifts by about 25 meV across the partially coalesced layer of ∼2 μm thick. The GaN above the nanocolumns remains under tensile strain, probably due to Si out-diffusion from the mask or substrate. The cross-sectional data show how this strain is reduced towards the surface of the partially coalesced layer, possibly due to misalignment between adjacent partially coalesced regions. |
doi_str_mv | 10.1063/1.4737418 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671417310</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1671417310</sourcerecordid><originalsourceid>FETCH-LOGICAL-c363t-affc5c25d41726706f381d93700056b532037efcee2fc5825785f0d6b680176c3</originalsourceid><addsrcrecordid>eNotkD1PwzAQhi0EEqUw8A88wpByF9cfGVEFBamCBebo6tgiyI2DnRb135OITjfc8766exi7RVggKPGAi6UWeonmjM0QTFVoKeGczQBKLEylq0t2lfM3AKIR1Yy5VYo5F9nZoY0dBU5dw_tAXXFo3S-3NHzFJob9ru1ctq6zjkfP1_TGe0pDSyEcuY0UpmXDaRsPjhPvqIt2SnWcUqLjNbvwFLK7Oc05-3x--li9FJv39evqcVNYocRQkPdW2lI2S9Sl0qC8MNhUQgOAVFspShDaeetcOYKmlNpID43aKgOolRVzdvff26f4s3d5qHfteFgY_3Fxn2tUGsdugTCi9_-onQQk5-s-tTtKxxqhnlTWWJ9Uij9QQGYV</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671417310</pqid></control><display><type>article</type><title>Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Lethy, K. J. ; Edwards, P. R. ; Liu, C. ; Wang, W. N. ; Martin, R. W.</creator><creatorcontrib>Lethy, K. J. ; Edwards, P. R. ; Liu, C. ; Wang, W. N. ; Martin, R. W.</creatorcontrib><description>The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been investigated by high resolution cathodoluminescence (CL) hyperspectral imaging. Plan-view microscopy reveals partially coalesced GaN layers with a sub-μm scale domain structure and distinct grain boundaries, which is mapped using CL spectroscopy showing high strain at the grain boundaries. Cross-sectional areas spanning the partially coalesced GaN and underlying nanocolumns are mapped using CL, revealing that the GaN bandedge peak shifts by about 25 meV across the partially coalesced layer of ∼2 μm thick. The GaN above the nanocolumns remains under tensile strain, probably due to Si out-diffusion from the mask or substrate. The cross-sectional data show how this strain is reduced towards the surface of the partially coalesced layer, possibly due to misalignment between adjacent partially coalesced regions.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4737418</identifier><language>eng</language><subject>Arrays ; Coalescing ; Gallium nitrides ; Grain boundaries ; Nanocomposites ; Nanomaterials ; Nanostructure ; Strain</subject><ispartof>Journal of applied physics, 2012-07, Vol.112 (2)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c363t-affc5c25d41726706f381d93700056b532037efcee2fc5825785f0d6b680176c3</citedby><cites>FETCH-LOGICAL-c363t-affc5c25d41726706f381d93700056b532037efcee2fc5825785f0d6b680176c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Lethy, K. J.</creatorcontrib><creatorcontrib>Edwards, P. R.</creatorcontrib><creatorcontrib>Liu, C.</creatorcontrib><creatorcontrib>Wang, W. N.</creatorcontrib><creatorcontrib>Martin, R. W.</creatorcontrib><title>Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array</title><title>Journal of applied physics</title><description>The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been investigated by high resolution cathodoluminescence (CL) hyperspectral imaging. Plan-view microscopy reveals partially coalesced GaN layers with a sub-μm scale domain structure and distinct grain boundaries, which is mapped using CL spectroscopy showing high strain at the grain boundaries. Cross-sectional areas spanning the partially coalesced GaN and underlying nanocolumns are mapped using CL, revealing that the GaN bandedge peak shifts by about 25 meV across the partially coalesced layer of ∼2 μm thick. The GaN above the nanocolumns remains under tensile strain, probably due to Si out-diffusion from the mask or substrate. The cross-sectional data show how this strain is reduced towards the surface of the partially coalesced layer, possibly due to misalignment between adjacent partially coalesced regions.</description><subject>Arrays</subject><subject>Coalescing</subject><subject>Gallium nitrides</subject><subject>Grain boundaries</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Strain</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkD1PwzAQhi0EEqUw8A88wpByF9cfGVEFBamCBebo6tgiyI2DnRb135OITjfc8766exi7RVggKPGAi6UWeonmjM0QTFVoKeGczQBKLEylq0t2lfM3AKIR1Yy5VYo5F9nZoY0dBU5dw_tAXXFo3S-3NHzFJob9ru1ctq6zjkfP1_TGe0pDSyEcuY0UpmXDaRsPjhPvqIt2SnWcUqLjNbvwFLK7Oc05-3x--li9FJv39evqcVNYocRQkPdW2lI2S9Sl0qC8MNhUQgOAVFspShDaeetcOYKmlNpID43aKgOolRVzdvff26f4s3d5qHfteFgY_3Fxn2tUGsdugTCi9_-onQQk5-s-tTtKxxqhnlTWWJ9Uij9QQGYV</recordid><startdate>20120715</startdate><enddate>20120715</enddate><creator>Lethy, K. J.</creator><creator>Edwards, P. R.</creator><creator>Liu, C.</creator><creator>Wang, W. N.</creator><creator>Martin, R. W.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120715</creationdate><title>Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array</title><author>Lethy, K. J. ; Edwards, P. R. ; Liu, C. ; Wang, W. N. ; Martin, R. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c363t-affc5c25d41726706f381d93700056b532037efcee2fc5825785f0d6b680176c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Arrays</topic><topic>Coalescing</topic><topic>Gallium nitrides</topic><topic>Grain boundaries</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Strain</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lethy, K. J.</creatorcontrib><creatorcontrib>Edwards, P. R.</creatorcontrib><creatorcontrib>Liu, C.</creatorcontrib><creatorcontrib>Wang, W. N.</creatorcontrib><creatorcontrib>Martin, R. W.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lethy, K. J.</au><au>Edwards, P. R.</au><au>Liu, C.</au><au>Wang, W. N.</au><au>Martin, R. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array</atitle><jtitle>Journal of applied physics</jtitle><date>2012-07-15</date><risdate>2012</risdate><volume>112</volume><issue>2</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been investigated by high resolution cathodoluminescence (CL) hyperspectral imaging. Plan-view microscopy reveals partially coalesced GaN layers with a sub-μm scale domain structure and distinct grain boundaries, which is mapped using CL spectroscopy showing high strain at the grain boundaries. Cross-sectional areas spanning the partially coalesced GaN and underlying nanocolumns are mapped using CL, revealing that the GaN bandedge peak shifts by about 25 meV across the partially coalesced layer of ∼2 μm thick. The GaN above the nanocolumns remains under tensile strain, probably due to Si out-diffusion from the mask or substrate. The cross-sectional data show how this strain is reduced towards the surface of the partially coalesced layer, possibly due to misalignment between adjacent partially coalesced regions.</abstract><doi>10.1063/1.4737418</doi><oa>free_for_read</oa></addata></record> |
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source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
subjects | Arrays Coalescing Gallium nitrides Grain boundaries Nanocomposites Nanomaterials Nanostructure Strain |
title | Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array |
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