Extremely small-chirp electroabsorption-modulator integrated distributed feedback laser diode with a shallow quantum-well absorption layer
We have developed an extremely small-chirp electroabsorption modulator integrated with a distributed feedback laser diode (EAM-DFB-LD) with a novel shallow quantum-well (QW) absorption layer. By using a shallow QW absorption layer, the estimated lifetime of the photogenerated holes and thus the esti...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2002-08, Vol.38 (8), p.1075-1080 |
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| container_title | IEEE journal of quantum electronics |
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| creator | Miyazaki, Y. Tada, H. Aoyagi, T. Nishimura, T. Mitsui, Y. |
| description | We have developed an extremely small-chirp electroabsorption modulator integrated with a distributed feedback laser diode (EAM-DFB-LD) with a novel shallow quantum-well (QW) absorption layer. By using a shallow QW absorption layer, the estimated lifetime of the photogenerated holes and thus the estimated concentration of the holes generated by optical absorption has been reduced to 9% of that for a conventional QW. It was experimentally confirmed that the excess chirp due to the pileup of carriers has been reduced to 10% of that for a conventional QW, and this result is consistent with the estimates. The shallow QW EAM-DFB-LD has shown a chirp parameter |/spl alpha/| less than 0.7 over the entire range of the EAM reverse bias voltage of 0-3 V. Finally, successful 10-Gb/s return to zero transmission has been confirmed through both positive dispersion (+425 ps/nm) and negative dispersion (-425 ps/nm). |
| doi_str_mv | 10.1109/JQE.2002.801030 |
| format | Article |
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By using a shallow QW absorption layer, the estimated lifetime of the photogenerated holes and thus the estimated concentration of the holes generated by optical absorption has been reduced to 9% of that for a conventional QW. It was experimentally confirmed that the excess chirp due to the pileup of carriers has been reduced to 10% of that for a conventional QW, and this result is consistent with the estimates. The shallow QW EAM-DFB-LD has shown a chirp parameter |/spl alpha/| less than 0.7 over the entire range of the EAM reverse bias voltage of 0-3 V. Finally, successful 10-Gb/s return to zero transmission has been confirmed through both positive dispersion (+425 ps/nm) and negative dispersion (-425 ps/nm).</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2002.801030</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Applied sciences ; Carriers ; Chirp ; Circuit properties ; Diode lasers ; Diodes ; Distributed feedback devices ; Distributed feedback lasers ; Electric, optical and optoelectronic circuits ; Electroabsorption modulators ; Electronics ; Estimates ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Integrated optics. Optical fibers and wave guides ; Lasers ; Life estimation ; Lifetime estimation ; Optical and optoelectronic circuits ; Optical elements, devices, and systems ; Optical feedback ; Optical modulation ; Optical processors, correlators, and modulators ; Optics ; Other integrated-optical elements and systems ; Physics ; Quantum electronics ; Quantum well lasers ; Quantum wells ; Semiconductor lasers; laser diodes ; Ultraviolet sources</subject><ispartof>IEEE journal of quantum electronics, 2002-08, Vol.38 (8), p.1075-1080</ispartof><rights>2002 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c411t-cdc4455c32a4f7d151955499f5b5131da1573ea5df2516f8b37372d82ef037713</citedby><cites>FETCH-LOGICAL-c411t-cdc4455c32a4f7d151955499f5b5131da1573ea5df2516f8b37372d82ef037713</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1021025$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1021025$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=13813971$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Miyazaki, Y.</creatorcontrib><creatorcontrib>Tada, H.</creatorcontrib><creatorcontrib>Aoyagi, T.</creatorcontrib><creatorcontrib>Nishimura, T.</creatorcontrib><creatorcontrib>Mitsui, Y.</creatorcontrib><title>Extremely small-chirp electroabsorption-modulator integrated distributed feedback laser diode with a shallow quantum-well absorption layer</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>We have developed an extremely small-chirp electroabsorption modulator integrated with a distributed feedback laser diode (EAM-DFB-LD) with a novel shallow quantum-well (QW) absorption layer. By using a shallow QW absorption layer, the estimated lifetime of the photogenerated holes and thus the estimated concentration of the holes generated by optical absorption has been reduced to 9% of that for a conventional QW. It was experimentally confirmed that the excess chirp due to the pileup of carriers has been reduced to 10% of that for a conventional QW, and this result is consistent with the estimates. The shallow QW EAM-DFB-LD has shown a chirp parameter |/spl alpha/| less than 0.7 over the entire range of the EAM reverse bias voltage of 0-3 V. Finally, successful 10-Gb/s return to zero transmission has been confirmed through both positive dispersion (+425 ps/nm) and negative dispersion (-425 ps/nm).</description><subject>Absorption</subject><subject>Applied sciences</subject><subject>Carriers</subject><subject>Chirp</subject><subject>Circuit properties</subject><subject>Diode lasers</subject><subject>Diodes</subject><subject>Distributed feedback devices</subject><subject>Distributed feedback lasers</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electroabsorption modulators</subject><subject>Electronics</subject><subject>Estimates</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Integrated optics. Optical fibers and wave guides</subject><subject>Lasers</subject><subject>Life estimation</subject><subject>Lifetime estimation</subject><subject>Optical and optoelectronic circuits</subject><subject>Optical elements, devices, and systems</subject><subject>Optical feedback</subject><subject>Optical modulation</subject><subject>Optical processors, correlators, and modulators</subject><subject>Optics</subject><subject>Other integrated-optical elements and systems</subject><subject>Physics</subject><subject>Quantum electronics</subject><subject>Quantum well lasers</subject><subject>Quantum wells</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Ultraviolet sources</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkUGLFDEQhRtRcFw9e_ASBGUvPZtKOpP0UZbRVRZE0HOTTqqdrOnObJJmdv6Cv9q0s7DiQaEgFfK9R1VeVb0Eugag7cWnL9s1o5StFQXK6aNqBUKoGiTwx9WKUlB1C618Wj1L6aZcm0bRVfVze5cjjuiPJI3a-9rsXNwT9GhyDLpPIe6zC1M9Bjt7nUMkbsr4PeqMlliXcnT9vPQDou21-UG8ThjLU7BIDi7viCZpV6zDgdzOesrzWB_Qe_JgXiRHjM-rJ4P2CV_cn2fVt_fbr5dX9fXnDx8v313XpgHItbGmaYQwnOlmkBYEtEI0bTuIXgAHq0FIjlrYgQnYDKrnkktmFcOBcll-46x6e_Ldx3A7Y8rd6JIpE-kJw5w6piSjHNj_Qako3bSqgOf_BGEjoYGNEgv6-i_0JsxxKvt2SpVIGsoW6OIEmRhSijh0--hGHY8d0G4Juythd0vY3Snsonhzb6uT0X6IejIuPci4At7-3v3ViXOI-IcrKyX4L3yItAc</recordid><startdate>20020801</startdate><enddate>20020801</enddate><creator>Miyazaki, Y.</creator><creator>Tada, H.</creator><creator>Aoyagi, T.</creator><creator>Nishimura, T.</creator><creator>Mitsui, Y.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope></search><sort><creationdate>20020801</creationdate><title>Extremely small-chirp electroabsorption-modulator integrated distributed feedback laser diode with a shallow quantum-well absorption layer</title><author>Miyazaki, Y. ; Tada, H. ; Aoyagi, T. ; Nishimura, T. ; Mitsui, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c411t-cdc4455c32a4f7d151955499f5b5131da1573ea5df2516f8b37372d82ef037713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Absorption</topic><topic>Applied sciences</topic><topic>Carriers</topic><topic>Chirp</topic><topic>Circuit properties</topic><topic>Diode lasers</topic><topic>Diodes</topic><topic>Distributed feedback devices</topic><topic>Distributed feedback lasers</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electroabsorption modulators</topic><topic>Electronics</topic><topic>Estimates</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Integrated optics. Optical fibers and wave guides</topic><topic>Lasers</topic><topic>Life estimation</topic><topic>Lifetime estimation</topic><topic>Optical and optoelectronic circuits</topic><topic>Optical elements, devices, and systems</topic><topic>Optical feedback</topic><topic>Optical modulation</topic><topic>Optical processors, correlators, and modulators</topic><topic>Optics</topic><topic>Other integrated-optical elements and systems</topic><topic>Physics</topic><topic>Quantum electronics</topic><topic>Quantum well lasers</topic><topic>Quantum wells</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Ultraviolet sources</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miyazaki, Y.</creatorcontrib><creatorcontrib>Tada, H.</creatorcontrib><creatorcontrib>Aoyagi, T.</creatorcontrib><creatorcontrib>Nishimura, T.</creatorcontrib><creatorcontrib>Mitsui, Y.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Miyazaki, Y.</au><au>Tada, H.</au><au>Aoyagi, T.</au><au>Nishimura, T.</au><au>Mitsui, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Extremely small-chirp electroabsorption-modulator integrated distributed feedback laser diode with a shallow quantum-well absorption layer</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2002-08-01</date><risdate>2002</risdate><volume>38</volume><issue>8</issue><spage>1075</spage><epage>1080</epage><pages>1075-1080</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>We have developed an extremely small-chirp electroabsorption modulator integrated with a distributed feedback laser diode (EAM-DFB-LD) with a novel shallow quantum-well (QW) absorption layer. By using a shallow QW absorption layer, the estimated lifetime of the photogenerated holes and thus the estimated concentration of the holes generated by optical absorption has been reduced to 9% of that for a conventional QW. It was experimentally confirmed that the excess chirp due to the pileup of carriers has been reduced to 10% of that for a conventional QW, and this result is consistent with the estimates. The shallow QW EAM-DFB-LD has shown a chirp parameter |/spl alpha/| less than 0.7 over the entire range of the EAM reverse bias voltage of 0-3 V. Finally, successful 10-Gb/s return to zero transmission has been confirmed through both positive dispersion (+425 ps/nm) and negative dispersion (-425 ps/nm).</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JQE.2002.801030</doi><tpages>6</tpages></addata></record> |
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| subjects | Absorption Applied sciences Carriers Chirp Circuit properties Diode lasers Diodes Distributed feedback devices Distributed feedback lasers Electric, optical and optoelectronic circuits Electroabsorption modulators Electronics Estimates Exact sciences and technology Fundamental areas of phenomenology (including applications) Integrated optics. Optical fibers and wave guides Lasers Life estimation Lifetime estimation Optical and optoelectronic circuits Optical elements, devices, and systems Optical feedback Optical modulation Optical processors, correlators, and modulators Optics Other integrated-optical elements and systems Physics Quantum electronics Quantum well lasers Quantum wells Semiconductor lasers laser diodes Ultraviolet sources |
| title | Extremely small-chirp electroabsorption-modulator integrated distributed feedback laser diode with a shallow quantum-well absorption layer |
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