Capacitively coupled radio frequency nitrogen plasma etch damage to N-type gallium nitride

Characteristics of N2 plasma etch damage to n-GaN are studied by comparing it with that for the Ar plasma etch damage. The characteristics of N2 plasma etch damage are different from those of the Ar plasma etch damage depending on gas pressure; SEM images show dark dots or curves on the surfaces etc...

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Veröffentlicht in:	Vacuum 2013-01, Vol.87, p.136-140
Hauptverfasser:	Kawakami, Retsuo, Takeichi, Atsushi, Niibe, Masahito, Konishi, Masashi, Mori, Yuta, Kotaka, Takuya, Inaoka, Takeshi, Tominaga, Kikuo, Mukai, Takashi
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical effects Damage Emission Emittance Etch depth Etching Gas pressure n-type GaN N/Ga ratio N2 plasma Plasma etch damage Radio frequencies Surface morphology
Online-Zugang:	Volltext
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