Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Thin SiO 2 layers were implanted with 140 keV Si ions to a dose of 10 17  cm −2 . The samples were irradiated with 130 Mev Xe ions in the dose range of 3×10 12 –10 14  cm −2 , either directly after implantation or after pre-annealing to form the embedded Si nanocrystals. In the as-implanted layers H...

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