The design of integrated 0.13- Delta mm CMOS receiver for ultra-wideband systems
A fully integrated 0.13-m CMOS receiver for ultra-wideband systems is implemented. This receiver enables eight bands of operation covering 3.1-9.0 GHz. The system, based on the Multiband OFDM Alliance standard proposal and consisting of a direct-conversion receiver chain and required noise figure, i...
Gespeichert in:
Veröffentlicht in: | Microwave and optical technology letters 2010-04, Vol.52 (4), p.841-845 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 845 |
---|---|
container_issue | 4 |
container_start_page | 841 |
container_title | Microwave and optical technology letters |
container_volume | 52 |
creator | Park, Bonghyuk Lee, Kwangchun Choi, Sangsung Hong, Songcheol |
description | A fully integrated 0.13-m CMOS receiver for ultra-wideband systems is implemented. This receiver enables eight bands of operation covering 3.1-9.0 GHz. The system, based on the Multiband OFDM Alliance standard proposal and consisting of a direct-conversion receiver chain and required noise figure, is discussed. The average conversion gain and input P1dB are 67.3 dB and -25.4 dBm, respectively. The shunt-series feedback low-noise amplifier provides a receiver front-end noise figure of 7.1-9.5 dB over the entire band. The mixer, based on a folded-cascode topology, also implements a four-stage programmable gain amplifier. A fabricated die has been bonded and molded onto PCB for characterization. The receiver chip dissipates 48 mA from 1.2 V power supply. |
doi_str_mv | 10.1002/mop.25083 |
format | Article |
fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671409737</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1671409737</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_16714097373</originalsourceid><addsrcrecordid>eNqVzLsOAUEUgOEpSFwLb3BKzXJ2B0PtEo2Q0MuwZxmZ2WHOLPH2FF5A9TdffiF6KQ5SxGzo_H2QjXEqa6KJ09k4yUZKNUSL-YaIUqmsKXaHK0FObC4l-AJMGekSdKQcvhOZwIJs1OAczDfbPQQ6k3lSgMIHqGwMOnmZnE66zIHfHMlxR9QLbZm6v7ZFf7U8zNfJPfhHRRyPzvCZrNUl-YqP6USlI5wpqeQf9AMN_kTr</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671409737</pqid></control><display><type>article</type><title>The design of integrated 0.13- Delta mm CMOS receiver for ultra-wideband systems</title><source>Access via Wiley Online Library</source><creator>Park, Bonghyuk ; Lee, Kwangchun ; Choi, Sangsung ; Hong, Songcheol</creator><creatorcontrib>Park, Bonghyuk ; Lee, Kwangchun ; Choi, Sangsung ; Hong, Songcheol</creatorcontrib><description>A fully integrated 0.13-m CMOS receiver for ultra-wideband systems is implemented. This receiver enables eight bands of operation covering 3.1-9.0 GHz. The system, based on the Multiband OFDM Alliance standard proposal and consisting of a direct-conversion receiver chain and required noise figure, is discussed. The average conversion gain and input P1dB are 67.3 dB and -25.4 dBm, respectively. The shunt-series feedback low-noise amplifier provides a receiver front-end noise figure of 7.1-9.5 dB over the entire band. The mixer, based on a folded-cascode topology, also implements a four-stage programmable gain amplifier. A fabricated die has been bonded and molded onto PCB for characterization. The receiver chip dissipates 48 mA from 1.2 V power supply.</description><identifier>ISSN: 0895-2477</identifier><identifier>DOI: 10.1002/mop.25083</identifier><language>eng</language><subject>Amplification ; Amplifiers ; CMOS ; Gain ; Noise ; Noise levels ; Proposals ; Receivers</subject><ispartof>Microwave and optical technology letters, 2010-04, Vol.52 (4), p.841-845</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Park, Bonghyuk</creatorcontrib><creatorcontrib>Lee, Kwangchun</creatorcontrib><creatorcontrib>Choi, Sangsung</creatorcontrib><creatorcontrib>Hong, Songcheol</creatorcontrib><title>The design of integrated 0.13- Delta mm CMOS receiver for ultra-wideband systems</title><title>Microwave and optical technology letters</title><description>A fully integrated 0.13-m CMOS receiver for ultra-wideband systems is implemented. This receiver enables eight bands of operation covering 3.1-9.0 GHz. The system, based on the Multiband OFDM Alliance standard proposal and consisting of a direct-conversion receiver chain and required noise figure, is discussed. The average conversion gain and input P1dB are 67.3 dB and -25.4 dBm, respectively. The shunt-series feedback low-noise amplifier provides a receiver front-end noise figure of 7.1-9.5 dB over the entire band. The mixer, based on a folded-cascode topology, also implements a four-stage programmable gain amplifier. A fabricated die has been bonded and molded onto PCB for characterization. The receiver chip dissipates 48 mA from 1.2 V power supply.</description><subject>Amplification</subject><subject>Amplifiers</subject><subject>CMOS</subject><subject>Gain</subject><subject>Noise</subject><subject>Noise levels</subject><subject>Proposals</subject><subject>Receivers</subject><issn>0895-2477</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqVzLsOAUEUgOEpSFwLb3BKzXJ2B0PtEo2Q0MuwZxmZ2WHOLPH2FF5A9TdffiF6KQ5SxGzo_H2QjXEqa6KJ09k4yUZKNUSL-YaIUqmsKXaHK0FObC4l-AJMGekSdKQcvhOZwIJs1OAczDfbPQQ6k3lSgMIHqGwMOnmZnE66zIHfHMlxR9QLbZm6v7ZFf7U8zNfJPfhHRRyPzvCZrNUl-YqP6USlI5wpqeQf9AMN_kTr</recordid><startdate>20100401</startdate><enddate>20100401</enddate><creator>Park, Bonghyuk</creator><creator>Lee, Kwangchun</creator><creator>Choi, Sangsung</creator><creator>Hong, Songcheol</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20100401</creationdate><title>The design of integrated 0.13- Delta mm CMOS receiver for ultra-wideband systems</title><author>Park, Bonghyuk ; Lee, Kwangchun ; Choi, Sangsung ; Hong, Songcheol</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_16714097373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Amplification</topic><topic>Amplifiers</topic><topic>CMOS</topic><topic>Gain</topic><topic>Noise</topic><topic>Noise levels</topic><topic>Proposals</topic><topic>Receivers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Bonghyuk</creatorcontrib><creatorcontrib>Lee, Kwangchun</creatorcontrib><creatorcontrib>Choi, Sangsung</creatorcontrib><creatorcontrib>Hong, Songcheol</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microwave and optical technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Bonghyuk</au><au>Lee, Kwangchun</au><au>Choi, Sangsung</au><au>Hong, Songcheol</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The design of integrated 0.13- Delta mm CMOS receiver for ultra-wideband systems</atitle><jtitle>Microwave and optical technology letters</jtitle><date>2010-04-01</date><risdate>2010</risdate><volume>52</volume><issue>4</issue><spage>841</spage><epage>845</epage><pages>841-845</pages><issn>0895-2477</issn><abstract>A fully integrated 0.13-m CMOS receiver for ultra-wideband systems is implemented. This receiver enables eight bands of operation covering 3.1-9.0 GHz. The system, based on the Multiband OFDM Alliance standard proposal and consisting of a direct-conversion receiver chain and required noise figure, is discussed. The average conversion gain and input P1dB are 67.3 dB and -25.4 dBm, respectively. The shunt-series feedback low-noise amplifier provides a receiver front-end noise figure of 7.1-9.5 dB over the entire band. The mixer, based on a folded-cascode topology, also implements a four-stage programmable gain amplifier. A fabricated die has been bonded and molded onto PCB for characterization. The receiver chip dissipates 48 mA from 1.2 V power supply.</abstract><doi>10.1002/mop.25083</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0895-2477 |
ispartof | Microwave and optical technology letters, 2010-04, Vol.52 (4), p.841-845 |
issn | 0895-2477 |
language | eng |
recordid | cdi_proquest_miscellaneous_1671409737 |
source | Access via Wiley Online Library |
subjects | Amplification Amplifiers CMOS Gain Noise Noise levels Proposals Receivers |
title | The design of integrated 0.13- Delta mm CMOS receiver for ultra-wideband systems |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T06%3A19%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20design%20of%20integrated%200.13-%20Delta%20mm%20CMOS%20receiver%20for%20ultra-wideband%20systems&rft.jtitle=Microwave%20and%20optical%20technology%20letters&rft.au=Park,%20Bonghyuk&rft.date=2010-04-01&rft.volume=52&rft.issue=4&rft.spage=841&rft.epage=845&rft.pages=841-845&rft.issn=0895-2477&rft_id=info:doi/10.1002/mop.25083&rft_dat=%3Cproquest%3E1671409737%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671409737&rft_id=info:pmid/&rfr_iscdi=true |