Ion beam analysis of high pressure deposition of epitaxial PZT thin films

Epitaxial thin films of Pb(Zr 0.53Ti 0.47) (PZT) ferroelectric ceramic were successfully grown on Sr(Nb)TiO 3 (SNTO) single crystal substrates by an high-pressure RF sputtering technique. Pure O 2 was used as working gas at a pressure above 1 Torr. The crystalline films properties were evaluated by...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2010-06, Vol.268 (11), p.1964-1966
Hauptverfasser:	Andrade, E., Blanco, O., de Lucio, O.G., Solis, C., Rocha, M.F., Zavala, E.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Ceramics Crystal structure Crystalline properties Deposition Epitaxial growth Ferroelectric materials High-pressure sputtering Ion beams Lead zirconate titanates PZT thin films RBS Sputtering Thin films
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