Effects of metal stacks and patterned metal profiles on the electromigration characteristics in super-thin AlCu interconnects for sub-0.13I14m technology

The electromigration (EM) characteristics of super-thin aluminum-copper alloy (AlCu) interconnects for sub-0.13I14m complementary metal-oxide-semiconductor logic technology were investigated by varying the AlCu underlayers and etched sidewall profile of AlCu wire. Super-thin AlCu wire with a Ti/TiN...

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Veröffentlicht in:	Thin solid films 2011-03, Vol.519 (11), p.3906-3913
Hauptverfasser:	Lee, Min Hyung, Kwon, Yong Min, Pyo, Sung Gyu, Lee, Han Choon, Han, Jae-Won, Paik, Kyung-Wook
Format:	Artikel
Sprache:	eng
Schlagworte:	Electromigration Etching (metallography) Failure Intermetallics Titanium Titanium aluminides Titanium nitride Voids
Online-Zugang:	Volltext
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