Low-energy ion-implantation-induced quantum-well intermixing
In this paper, we present the attractive characteristics of low-energy ion-implantation-induced quantum-well intermixing of InP-based heterostructures. We demonstrate that this method can fulfil a list of requirements related to the fabrication of complex optoelectronic devices with a spatial contro...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2002-07, Vol.8 (4), p.870-879 |
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| container_end_page | 879 |
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| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Aimez, V. Beauvais, J. Beerens, J. Morris, D. Lim, H.S. Boon-Siew Ooi |
| description | In this paper, we present the attractive characteristics of low-energy ion-implantation-induced quantum-well intermixing of InP-based heterostructures. We demonstrate that this method can fulfil a list of requirements related to the fabrication of complex optoelectronic devices with a spatial control of the bandgap profile. First, we have fabricated high-quality discrete blueshifted laser diodes to verify the capability of low-energy ion implantation for the controlled modification of bandgap profiles in the absence of thermal shift. Based on this result, intracavity electroabsorption modulators monolithically integrated with laser devices were fabricated, for the first time, using this postgrowth technique. We have also fabricated monolithic six-channel multiple-wavelength laser diode chips using a novel one-step ion implantation masking process. Finally, we also present the results obtained with very low-energy (below 20 keV) ion implantation for the development of one-dimensional and zero-dimensional quantum confined structures. |
| doi_str_mv | 10.1109/JSTQE.2002.800846 |
| format | Article |
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We demonstrate that this method can fulfil a list of requirements related to the fabrication of complex optoelectronic devices with a spatial control of the bandgap profile. First, we have fabricated high-quality discrete blueshifted laser diodes to verify the capability of low-energy ion implantation for the controlled modification of bandgap profiles in the absence of thermal shift. Based on this result, intracavity electroabsorption modulators monolithically integrated with laser devices were fabricated, for the first time, using this postgrowth technique. We have also fabricated monolithic six-channel multiple-wavelength laser diode chips using a novel one-step ion implantation masking process. Finally, we also present the results obtained with very low-energy (below 20 keV) ion implantation for the development of one-dimensional and zero-dimensional quantum confined structures.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2002.800846</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Chip formation ; Devices ; Diode lasers ; Ion implantation ; Laser diodes ; Lasers ; Optical control ; Optical device fabrication ; Optoelectronic devices ; Photonic band gap ; Potential well ; Quantum electronics ; Quantum well devices ; Quantum well lasers ; Quantum wells</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2002-07, Vol.8 (4), p.870-879</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c452t-a5c7c5ec07acb51d782e1b67f2aa4e056f579530db8c1a6645a1333e4830c503</citedby><cites>FETCH-LOGICAL-c452t-a5c7c5ec07acb51d782e1b67f2aa4e056f579530db8c1a6645a1333e4830c503</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1039479$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1039479$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Aimez, V.</creatorcontrib><creatorcontrib>Beauvais, J.</creatorcontrib><creatorcontrib>Beerens, J.</creatorcontrib><creatorcontrib>Morris, D.</creatorcontrib><creatorcontrib>Lim, H.S.</creatorcontrib><creatorcontrib>Boon-Siew Ooi</creatorcontrib><title>Low-energy ion-implantation-induced quantum-well intermixing</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>In this paper, we present the attractive characteristics of low-energy ion-implantation-induced quantum-well intermixing of InP-based heterostructures. 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Finally, we also present the results obtained with very low-energy (below 20 keV) ion implantation for the development of one-dimensional and zero-dimensional quantum confined structures.</description><subject>Chip formation</subject><subject>Devices</subject><subject>Diode lasers</subject><subject>Ion implantation</subject><subject>Laser diodes</subject><subject>Lasers</subject><subject>Optical control</subject><subject>Optical device fabrication</subject><subject>Optoelectronic devices</subject><subject>Photonic band gap</subject><subject>Potential well</subject><subject>Quantum electronics</subject><subject>Quantum well devices</subject><subject>Quantum well lasers</subject><subject>Quantum wells</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90ctKAzEUBuBBFKzVBxA3xYW6mXqSTG7gRkq9URCxC3chzWRKylzayQy1b2-m40JcdJUL3x9O-KPoEsEYIZD3b5_zj-kYA-CxABAJO4oGiFIRJzTBx2EPnMeYwddpdOb9CjojYBA9zKptbEtbL3cjV5WxK9a5Lhvd7A9l2hqbjjZtuGqLeGvzfOTKxtaF-3bl8jw6yXTu7cXvOozmT9P55CWevT-_Th5nsUkobmJNDTfUGuDaLChKucAWLRjPsNaJBcoyyiUlkC6EQZqxhGpECLGJIGAokGF02z-7rqtNa32jCudNmEWXtmq9khDijGMZ5M1BiQUhDAEJ8O4gRIwjIhliHb3-R1dVW5fhv0pKLDgjQANCPTJ15X1tM7WuXaHrnUKguoLUviDVFaT6gkLmqs84a-0fT2TCJfkBH2eLQw</recordid><startdate>20020701</startdate><enddate>20020701</enddate><creator>Aimez, V.</creator><creator>Beauvais, J.</creator><creator>Beerens, J.</creator><creator>Morris, D.</creator><creator>Lim, H.S.</creator><creator>Boon-Siew Ooi</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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We demonstrate that this method can fulfil a list of requirements related to the fabrication of complex optoelectronic devices with a spatial control of the bandgap profile. First, we have fabricated high-quality discrete blueshifted laser diodes to verify the capability of low-energy ion implantation for the controlled modification of bandgap profiles in the absence of thermal shift. Based on this result, intracavity electroabsorption modulators monolithically integrated with laser devices were fabricated, for the first time, using this postgrowth technique. We have also fabricated monolithic six-channel multiple-wavelength laser diode chips using a novel one-step ion implantation masking process. Finally, we also present the results obtained with very low-energy (below 20 keV) ion implantation for the development of one-dimensional and zero-dimensional quantum confined structures.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSTQE.2002.800846</doi><tpages>10</tpages></addata></record> |
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| subjects | Chip formation Devices Diode lasers Ion implantation Laser diodes Lasers Optical control Optical device fabrication Optoelectronic devices Photonic band gap Potential well Quantum electronics Quantum well devices Quantum well lasers Quantum wells |
| title | Low-energy ion-implantation-induced quantum-well intermixing |
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