Analysis of wetting layer effect on electronic structures of truncated-pyramid quantum dots

We carry out a theoretical analysis of wetting layer effect on band-edge profiles and electronic structures of InAs/GaAs truncated-pyramid quantum dots, including the strain effect. A combination of an analytical strain model and an eight-band Fourier transform-based k · p method is adopted in the c...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Optical and quantum electronics 2011-10, Vol.42 (11-13), p.705-711
Hauptverfasser:	Zhao, Qiuji, Mei, Ting, Zhang, Daohua, Kurniawan, Oka
Format:	Artikel
Sprache:	eng
Schlagworte:	Band theory Characterization and Evaluation of Materials Computer Communication Networks Electrical Engineering Electronic structure Exact sciences and technology Fundamental areas of phenomenology (including applications) Gallium arsenide Lasers Optical Devices Optical materials Optics Other nonlinear optical materials photorefractive and semiconductor materials Photonics Physics Physics and Astronomy Probability density functions Quantum confinement Quantum dots Strain Wetting
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!