Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy

The growth of AlGaN, GaN and InGaN layers on (202¯1) GaN substrates was investigated by metal-organic vapor phase epitaxy. All layers exhibit undulations along [101¯4] with a period length between 20nm and 45nm. Under certain growth conditions, GaN exhibits bunching of the undulations leading to an...

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Veröffentlicht in:	Journal of crystal growth 2012-10, Vol.356, p.70-74
Hauptverfasser:	Ploch, Simon, Wernicke, Tim, Thalmair, Johannes, Lohr, Matthias, Pristovsek, Markus, Zweck, Josef, Weyers, Markus, Kneissl, Michael
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Crystal morphology A3. Metal-organic vapor phase epitaxy Aluminum gallium nitrides B1. Nitrides B2. Semiconducting gallium compounds Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal growth Exact sciences and technology Gallium nitrides Indium gallium nitrides Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Reactors Structure and morphology thickness Surface roughness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology Topography Vapor phase epitaxy Vapor phase epitaxy growth from vapor phase
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