The influence of hafnium doping on bias stability in zinc oxide thin film transistors
We investigated the influence of hafnium doping on negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) in zinc oxide thin film transistors (TFTs). Hafnium zinc oxide (HZO) TFTs exhibited turn-on voltage (V ON) shifts of 0 V for negative stress bias and + 3 V...
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| Veröffentlicht in: | Thin solid films 2011-05, Vol.519 (15), p.5161-5164 |
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| container_title | Thin solid films |
| container_volume | 519 |
| creator | Kim, Woong-Sun Moon, Yeon-Keon Kim, Kyung-Taek Shin, Sae-Young Du Ahn, Byung Lee, Je-Hun Park, Jong-Wan |
| description | We investigated the influence of hafnium doping on negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) in zinc oxide thin film transistors (TFTs). Hafnium zinc oxide (HZO) TFTs exhibited turn-on voltage (V
ON) shifts of 0
V for negative stress bias and +
3
V for positive stress bias, compared with −5
V and +
9
V, respectively, for ZnO TFTs. The enhanced improvement of the V
ON shift may be due to a reduction in interface trap density resulting from the suppression of oxygen vacancy related defects caused by the high binding energy of Hf ions. |
| doi_str_mv | 10.1016/j.tsf.2011.01.079 |
| format | Article |
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ON) shifts of 0
V for negative stress bias and +
3
V for positive stress bias, compared with −5
V and +
9
V, respectively, for ZnO TFTs. The enhanced improvement of the V
ON shift may be due to a reduction in interface trap density resulting from the suppression of oxygen vacancy related defects caused by the high binding energy of Hf ions.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2011.01.079</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Bias ; Density ; Electronics ; Exact sciences and technology ; Hafnium ; Hafnium zinc oxide (HZO) ; Instability ; Negative bias temperature instability (NBTI) ; Oxide semiconductor ; Positive bias temperature instability (PBTI) ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stability ; Thin film transistor (TFT) ; Thin film transistors ; Transistors ; Zinc oxide</subject><ispartof>Thin solid films, 2011-05, Vol.519 (15), p.5161-5164</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c426t-a861b422f79f2706a25679b91bc580a5904bbabd26f91fdca3df88337acec05b3</citedby><cites>FETCH-LOGICAL-c426t-a861b422f79f2706a25679b91bc580a5904bbabd26f91fdca3df88337acec05b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2011.01.079$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,3551,23935,23936,25145,27929,27930,46000</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24346756$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Woong-Sun</creatorcontrib><creatorcontrib>Moon, Yeon-Keon</creatorcontrib><creatorcontrib>Kim, Kyung-Taek</creatorcontrib><creatorcontrib>Shin, Sae-Young</creatorcontrib><creatorcontrib>Du Ahn, Byung</creatorcontrib><creatorcontrib>Lee, Je-Hun</creatorcontrib><creatorcontrib>Park, Jong-Wan</creatorcontrib><title>The influence of hafnium doping on bias stability in zinc oxide thin film transistors</title><title>Thin solid films</title><description>We investigated the influence of hafnium doping on negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) in zinc oxide thin film transistors (TFTs). Hafnium zinc oxide (HZO) TFTs exhibited turn-on voltage (V
ON) shifts of 0
V for negative stress bias and +
3
V for positive stress bias, compared with −5
V and +
9
V, respectively, for ZnO TFTs. The enhanced improvement of the V
ON shift may be due to a reduction in interface trap density resulting from the suppression of oxygen vacancy related defects caused by the high binding energy of Hf ions.</description><subject>Applied sciences</subject><subject>Bias</subject><subject>Density</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Hafnium</subject><subject>Hafnium zinc oxide (HZO)</subject><subject>Instability</subject><subject>Negative bias temperature instability (NBTI)</subject><subject>Oxide semiconductor</subject><subject>Positive bias temperature instability (PBTI)</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stability</subject><subject>Thin film transistor (TFT)</subject><subject>Thin film transistors</subject><subject>Transistors</subject><subject>Zinc oxide</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kEGLFDEQhYMoOK7-AG-5CF56tpLuTjp4ksVVYWEvu-eQpBOnhp7OmMqI6683wywehYKi4HuveI-x9wK2AoS63m8rpa0EIbbQRpsXbCMmbTqpe_GSbQAG6BQYeM3eEO0BQEjZb9jjwy5yXNNyimuIPCe-c2nF04HP-YjrD55X7tERp-o8LlifGs3_4Bp4_o1z5HXX7oTLgdfiVkKqudBb9iq5heK7533FHm-_PNx86-7uv36_-XzXhUGq2rlJCT9ImbRJUoNyclTaeCN8GCdwo4HBe-dnqZIRaQ6un9M09b12IQYYfX_FPl58jyX_PEWq9oAU4rK4NeYTWaG06CcphWyouKChZKISkz0WPLjyZAXYc4V2b1uF9lyhhTbaNM2HZ3tHwS2pBQxI_4Ry6AelR9W4Txcutqy_MBZLAc99zlhiqHbO-J8vfwGqOIbw</recordid><startdate>20110531</startdate><enddate>20110531</enddate><creator>Kim, Woong-Sun</creator><creator>Moon, Yeon-Keon</creator><creator>Kim, Kyung-Taek</creator><creator>Shin, Sae-Young</creator><creator>Du Ahn, Byung</creator><creator>Lee, Je-Hun</creator><creator>Park, Jong-Wan</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110531</creationdate><title>The influence of hafnium doping on bias stability in zinc oxide thin film transistors</title><author>Kim, Woong-Sun ; Moon, Yeon-Keon ; Kim, Kyung-Taek ; Shin, Sae-Young ; Du Ahn, Byung ; Lee, Je-Hun ; Park, Jong-Wan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-a861b422f79f2706a25679b91bc580a5904bbabd26f91fdca3df88337acec05b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Bias</topic><topic>Density</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Hafnium</topic><topic>Hafnium zinc oxide (HZO)</topic><topic>Instability</topic><topic>Negative bias temperature instability (NBTI)</topic><topic>Oxide semiconductor</topic><topic>Positive bias temperature instability (PBTI)</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stability</topic><topic>Thin film transistor (TFT)</topic><topic>Thin film transistors</topic><topic>Transistors</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Woong-Sun</creatorcontrib><creatorcontrib>Moon, Yeon-Keon</creatorcontrib><creatorcontrib>Kim, Kyung-Taek</creatorcontrib><creatorcontrib>Shin, Sae-Young</creatorcontrib><creatorcontrib>Du Ahn, Byung</creatorcontrib><creatorcontrib>Lee, Je-Hun</creatorcontrib><creatorcontrib>Park, Jong-Wan</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Woong-Sun</au><au>Moon, Yeon-Keon</au><au>Kim, Kyung-Taek</au><au>Shin, Sae-Young</au><au>Du Ahn, Byung</au><au>Lee, Je-Hun</au><au>Park, Jong-Wan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The influence of hafnium doping on bias stability in zinc oxide thin film transistors</atitle><jtitle>Thin solid films</jtitle><date>2011-05-31</date><risdate>2011</risdate><volume>519</volume><issue>15</issue><spage>5161</spage><epage>5164</epage><pages>5161-5164</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>We investigated the influence of hafnium doping on negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) in zinc oxide thin film transistors (TFTs). Hafnium zinc oxide (HZO) TFTs exhibited turn-on voltage (V
ON) shifts of 0
V for negative stress bias and +
3
V for positive stress bias, compared with −5
V and +
9
V, respectively, for ZnO TFTs. The enhanced improvement of the V
ON shift may be due to a reduction in interface trap density resulting from the suppression of oxygen vacancy related defects caused by the high binding energy of Hf ions.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2011.01.079</doi><tpages>4</tpages></addata></record> |
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| ispartof | Thin solid films, 2011-05, Vol.519 (15), p.5161-5164 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Applied sciences Bias Density Electronics Exact sciences and technology Hafnium Hafnium zinc oxide (HZO) Instability Negative bias temperature instability (NBTI) Oxide semiconductor Positive bias temperature instability (PBTI) Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability Thin film transistor (TFT) Thin film transistors Transistors Zinc oxide |
| title | The influence of hafnium doping on bias stability in zinc oxide thin film transistors |
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