A High-Efficiency, High-Power Millimeter-Wave Oscillator Using a Feedback Class-E Power Amplifier in 45 nm CMOS
A high-efficiency high-power millimeter-wave oscillator was implemented in IBM 45 nm silicon-on-insulator (SOI) CMOS using a class-E power amplifier in a feedback configuration. The oscillator achieves a peak output power of +4.6 dBm, a peak efficiency of 11.54%, and phase noises of -106.61 dBc/Hz a...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2011-08, Vol.21 (8), p.430-432 |
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| creator | Juntunen, Eric Dawn, Debasis Pinel, Stephane Laskar, Joy |
| description | A high-efficiency high-power millimeter-wave oscillator was implemented in IBM 45 nm silicon-on-insulator (SOI) CMOS using a class-E power amplifier in a feedback configuration. The oscillator achieves a peak output power of +4.6 dBm, a peak efficiency of 11.54%, and phase noises of -106.61 dBc/Hz and -131.28 dBc/Hz at 1 and 10 MHz offsets, respectively. All matching circuits and inductive elements are realized on-chip with transmission line for application in the millimeter-wave frequency bands. The oscillator is tunable between 41.08 GHz and 42.87 GHz by using a λ/4 stub terminated with a varactor in the feedback path. The circuit achieves the highest reported efficiency and output power for silicon-based monolithic millimeter-wave oscillators to the best of the authors' knowledge. |
| doi_str_mv | 10.1109/LMWC.2011.2157334 |
| format | Article |
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The oscillator achieves a peak output power of +4.6 dBm, a peak efficiency of 11.54%, and phase noises of -106.61 dBc/Hz and -131.28 dBc/Hz at 1 and 10 MHz offsets, respectively. All matching circuits and inductive elements are realized on-chip with transmission line for application in the millimeter-wave frequency bands. The oscillator is tunable between 41.08 GHz and 42.87 GHz by using a λ/4 stub terminated with a varactor in the feedback path. The circuit achieves the highest reported efficiency and output power for silicon-based monolithic millimeter-wave oscillators to the best of the authors' knowledge.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2011.2157334</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Circuit properties ; Circuits ; Class-E ; CMOS ; CMOS integrated circuits ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Feedback ; Frequency bands ; Integrated circuits ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; Millimeter wave radar ; millimeter-wave ; Noise ; oscillator ; Oscillators ; Oscillators, resonators, synthetizers ; Phase noise ; power amplifier (PA) ; Power amplifiers ; Power generation ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Tuning</subject><ispartof>IEEE microwave and wireless components letters, 2011-08, Vol.21 (8), p.430-432</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Aug 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-a61e072fb3335664093fedf6e3a2a8767f3afb954aa5b021f48c4875df35de8e3</citedby><cites>FETCH-LOGICAL-c355t-a61e072fb3335664093fedf6e3a2a8767f3afb954aa5b021f48c4875df35de8e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5944990$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5944990$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24440873$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Juntunen, Eric</creatorcontrib><creatorcontrib>Dawn, Debasis</creatorcontrib><creatorcontrib>Pinel, Stephane</creatorcontrib><creatorcontrib>Laskar, Joy</creatorcontrib><title>A High-Efficiency, High-Power Millimeter-Wave Oscillator Using a Feedback Class-E Power Amplifier in 45 nm CMOS</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>A high-efficiency high-power millimeter-wave oscillator was implemented in IBM 45 nm silicon-on-insulator (SOI) CMOS using a class-E power amplifier in a feedback configuration. The oscillator achieves a peak output power of +4.6 dBm, a peak efficiency of 11.54%, and phase noises of -106.61 dBc/Hz and -131.28 dBc/Hz at 1 and 10 MHz offsets, respectively. All matching circuits and inductive elements are realized on-chip with transmission line for application in the millimeter-wave frequency bands. The oscillator is tunable between 41.08 GHz and 42.87 GHz by using a λ/4 stub terminated with a varactor in the feedback path. The circuit achieves the highest reported efficiency and output power for silicon-based monolithic millimeter-wave oscillators to the best of the authors' knowledge.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Class-E</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Feedback</subject><subject>Frequency bands</subject><subject>Integrated circuits</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>Millimeter wave radar</subject><subject>millimeter-wave</subject><subject>Noise</subject><subject>oscillator</subject><subject>Oscillators</subject><subject>Oscillators, resonators, synthetizers</subject><subject>Phase noise</subject><subject>power amplifier (PA)</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Tuning</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkU9rGzEQxUVoIKmTDxByEYVCD11Hs5JW0tEsTlKwcaANOQpZHiVK948r2S359lmzJoeeZnjze4-BR8gVsCkAMzeL5VM9LRnAtASpOBcn5Byk1AWoSnw67BwK4Myckc85vzIGQgs4J_2M3sfnl2IeQvQRO__2fRQe-n-Y6DI2TWxxh6l4cn-RrrIfFLfrE33MsXumjt4ibtbO_6Z143Iu5nR0ztptE0MctthRIWnX0nq5-nlBToNrMl4e54Q83s5_1ffFYnX3o54tCs-l3BWuAmSqDGvOuawqwQwPuAkVclc6rSoVuAtrI4Vzcs1KCEJ7oZXcBC43qJFPyLcxd5v6P3vMO9vG7HH4vcN-ny1UCrgyJegB_fIf-trvUzd8Z7UGY6QyMEAwQj71OScMdpti69KbBWYPDdhDA_bQgD02MHi-HoNd9q4JyXU-5g9jKYRgeiAn5HrkIiJ-nKURwhjG3wFm64xy</recordid><startdate>20110801</startdate><enddate>20110801</enddate><creator>Juntunen, Eric</creator><creator>Dawn, Debasis</creator><creator>Pinel, Stephane</creator><creator>Laskar, Joy</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Tuning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Juntunen, Eric</creatorcontrib><creatorcontrib>Dawn, Debasis</creatorcontrib><creatorcontrib>Pinel, Stephane</creatorcontrib><creatorcontrib>Laskar, Joy</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Juntunen, Eric</au><au>Dawn, Debasis</au><au>Pinel, Stephane</au><au>Laskar, Joy</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A High-Efficiency, High-Power Millimeter-Wave Oscillator Using a Feedback Class-E Power Amplifier in 45 nm CMOS</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2011-08-01</date><risdate>2011</risdate><volume>21</volume><issue>8</issue><spage>430</spage><epage>432</epage><pages>430-432</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>A high-efficiency high-power millimeter-wave oscillator was implemented in IBM 45 nm silicon-on-insulator (SOI) CMOS using a class-E power amplifier in a feedback configuration. The oscillator achieves a peak output power of +4.6 dBm, a peak efficiency of 11.54%, and phase noises of -106.61 dBc/Hz and -131.28 dBc/Hz at 1 and 10 MHz offsets, respectively. All matching circuits and inductive elements are realized on-chip with transmission line for application in the millimeter-wave frequency bands. The oscillator is tunable between 41.08 GHz and 42.87 GHz by using a λ/4 stub terminated with a varactor in the feedback path. The circuit achieves the highest reported efficiency and output power for silicon-based monolithic millimeter-wave oscillators to the best of the authors' knowledge.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2011.2157334</doi><tpages>3</tpages></addata></record> |
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| subjects | Amplifiers Applied sciences Circuit properties Circuits Class-E CMOS CMOS integrated circuits Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Feedback Frequency bands Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave radar millimeter-wave Noise oscillator Oscillators Oscillators, resonators, synthetizers Phase noise power amplifier (PA) Power amplifiers Power generation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tuning |
| title | A High-Efficiency, High-Power Millimeter-Wave Oscillator Using a Feedback Class-E Power Amplifier in 45 nm CMOS |
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