Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering

The effect of the base pressure on the incorporation of oxygen into reactively magnetron-sputtered metal-nitride films has been investigated. A UHV sputtering system with a base pressure of less than 10 super(-6 Pa was used to examine the relationship between a deliberately introduced background pre...

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Veröffentlicht in:	Vacuum 2008-10, Vol.83 (3), p.467-469
Hauptverfasser:	Nakano, Takeo, Hoshi, Ken'ichiroh, Baba, Shigeru
Format:	Artikel
Sprache:	eng
Schlagworte:	Base pressure Deposition Oxygen content Partial pressure Sputtering Titanium nitride X-ray photoelectron spectroscopy X-rays
Online-Zugang:	Volltext
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