Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering
The effect of the base pressure on the incorporation of oxygen into reactively magnetron-sputtered metal-nitride films has been investigated. A UHV sputtering system with a base pressure of less than 10 super(-6 Pa was used to examine the relationship between a deliberately introduced background pre...
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| Veröffentlicht in: | Vacuum 2008-10, Vol.83 (3), p.467-469 |
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| creator | Nakano, Takeo Hoshi, Ken'ichiroh Baba, Shigeru |
| description | The effect of the base pressure on the incorporation of oxygen into reactively magnetron-sputtered metal-nitride films has been investigated. A UHV sputtering system with a base pressure of less than 10 super(-6 Pa was used to examine the relationship between a deliberately introduced background pressure of oxygen and a measured oxygen content in the sputter-deposited TiN films. The results showed that with an oxygen partial pressure of 10) super(-)4 Pa, the deposited TiN was found to include 10-20 at.% of oxygen when measured by the technique of X-ray photoelectron spectroscopy (XPS). When no oxygen was admitted into the system, no trace of oxygen could be detected in the deposited TiN films. The incorporation mechanism is discussed in terms of the coverage-dependent sticking probabilities of O sub(2 and N) sub(2) on a Ti metal surface. |
| doi_str_mv | 10.1016/j.vacuum.2008.04.014 |
| format | Article |
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A UHV sputtering system with a base pressure of less than 10 super(-6 Pa was used to examine the relationship between a deliberately introduced background pressure of oxygen and a measured oxygen content in the sputter-deposited TiN films. The results showed that with an oxygen partial pressure of 10) super(-)4 Pa, the deposited TiN was found to include 10-20 at.% of oxygen when measured by the technique of X-ray photoelectron spectroscopy (XPS). When no oxygen was admitted into the system, no trace of oxygen could be detected in the deposited TiN films. The incorporation mechanism is discussed in terms of the coverage-dependent sticking probabilities of O sub(2 and N) sub(2) on a Ti metal surface.</description><identifier>ISSN: 0042-207X</identifier><identifier>DOI: 10.1016/j.vacuum.2008.04.014</identifier><language>eng</language><subject>Base pressure ; Deposition ; Oxygen content ; Partial pressure ; Sputtering ; Titanium nitride ; X-ray photoelectron spectroscopy ; X-rays</subject><ispartof>Vacuum, 2008-10, Vol.83 (3), p.467-469</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-a87524daec092624e945e629e4a796741c451e8742eeff792649f9993826e2863</citedby><cites>FETCH-LOGICAL-c350t-a87524daec092624e945e629e4a796741c451e8742eeff792649f9993826e2863</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27907,27908</link.rule.ids></links><search><creatorcontrib>Nakano, Takeo</creatorcontrib><creatorcontrib>Hoshi, Ken'ichiroh</creatorcontrib><creatorcontrib>Baba, Shigeru</creatorcontrib><title>Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering</title><title>Vacuum</title><description>The effect of the base pressure on the incorporation of oxygen into reactively magnetron-sputtered metal-nitride films has been investigated. A UHV sputtering system with a base pressure of less than 10 super(-6 Pa was used to examine the relationship between a deliberately introduced background pressure of oxygen and a measured oxygen content in the sputter-deposited TiN films. The results showed that with an oxygen partial pressure of 10) super(-)4 Pa, the deposited TiN was found to include 10-20 at.% of oxygen when measured by the technique of X-ray photoelectron spectroscopy (XPS). When no oxygen was admitted into the system, no trace of oxygen could be detected in the deposited TiN films. The incorporation mechanism is discussed in terms of the coverage-dependent sticking probabilities of O sub(2 and N) sub(2) on a Ti metal surface.</description><subject>Base pressure</subject><subject>Deposition</subject><subject>Oxygen content</subject><subject>Partial pressure</subject><subject>Sputtering</subject><subject>Titanium nitride</subject><subject>X-ray photoelectron spectroscopy</subject><subject>X-rays</subject><issn>0042-207X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotkLFOwzAURTOARCn8AYNHloZnx4mTEVWFIlWwtIjNMu5z5NLYwXYqKn6eVGW6urpHdzhZdkchp0Crh11-UHoYupwB1DnwHCi_yCYAnM0YiI-r7DrGHQCwCupJ9rswBnUi3pBPpb_a4Ae3Ja2KBN3BBu86dOPqiP85tuiIddqH3geVrD81sravxNh9F8kWex9twi0ZonUt2SzfSUClkz0g6VTrMI1_JPZDShhG4ia7NGof8fY_p9nmabGeL2ert-eX-eNqposS0kzVomR8q1BDwyrGseElVqxBrkRTCU41LynWgjNEY8TI8MY0TVPUrEJWV8U0uz__9sF_DxiT7GzUuN8rh36IklaCFkIUFEaUn1EdfIwBjeyD7VQ4Sgry5Ffu5NmvPPmVwOXot_gDphN0bQ</recordid><startdate>20081015</startdate><enddate>20081015</enddate><creator>Nakano, Takeo</creator><creator>Hoshi, Ken'ichiroh</creator><creator>Baba, Shigeru</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20081015</creationdate><title>Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering</title><author>Nakano, Takeo ; Hoshi, Ken'ichiroh ; Baba, Shigeru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-a87524daec092624e945e629e4a796741c451e8742eeff792649f9993826e2863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Base pressure</topic><topic>Deposition</topic><topic>Oxygen content</topic><topic>Partial pressure</topic><topic>Sputtering</topic><topic>Titanium nitride</topic><topic>X-ray photoelectron spectroscopy</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakano, Takeo</creatorcontrib><creatorcontrib>Hoshi, Ken'ichiroh</creatorcontrib><creatorcontrib>Baba, Shigeru</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Vacuum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakano, Takeo</au><au>Hoshi, Ken'ichiroh</au><au>Baba, Shigeru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering</atitle><jtitle>Vacuum</jtitle><date>2008-10-15</date><risdate>2008</risdate><volume>83</volume><issue>3</issue><spage>467</spage><epage>469</epage><pages>467-469</pages><issn>0042-207X</issn><abstract>The effect of the base pressure on the incorporation of oxygen into reactively magnetron-sputtered metal-nitride films has been investigated. A UHV sputtering system with a base pressure of less than 10 super(-6 Pa was used to examine the relationship between a deliberately introduced background pressure of oxygen and a measured oxygen content in the sputter-deposited TiN films. The results showed that with an oxygen partial pressure of 10) super(-)4 Pa, the deposited TiN was found to include 10-20 at.% of oxygen when measured by the technique of X-ray photoelectron spectroscopy (XPS). When no oxygen was admitted into the system, no trace of oxygen could be detected in the deposited TiN films. The incorporation mechanism is discussed in terms of the coverage-dependent sticking probabilities of O sub(2 and N) sub(2) on a Ti metal surface.</abstract><doi>10.1016/j.vacuum.2008.04.014</doi><tpages>3</tpages></addata></record> |
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| ispartof | Vacuum, 2008-10, Vol.83 (3), p.467-469 |
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| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Base pressure Deposition Oxygen content Partial pressure Sputtering Titanium nitride X-ray photoelectron spectroscopy X-rays |
| title | Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering |
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