Sol–gel processed Cu2ZnSnS4 thin films for a photovoltaic absorber layer without sulfurization

Sol–gel processed Cu 2 ZnSnS 4 (CZTS) thin films were fabricated without sulfurization for application as a photovoltaic absorber layer. The precursor solution was made from CuCl 2 , Zn(ac) 2 , SnCl 2 , thiourea, and 2-methoxyethanol and the spin-coated film was annealed at temperature above 500 °C...

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Veröffentlicht in:Journal of sol-gel science and technology 2013, Vol.65 (1), p.23-27
Hauptverfasser: Park, Hyungjin, Hwang, Young Hwan, Bae, Byeong-Soo
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creator Park, Hyungjin
Hwang, Young Hwan
Bae, Byeong-Soo
description Sol–gel processed Cu 2 ZnSnS 4 (CZTS) thin films were fabricated without sulfurization for application as a photovoltaic absorber layer. The precursor solution was made from CuCl 2 , Zn(ac) 2 , SnCl 2 , thiourea, and 2-methoxyethanol and the spin-coated film was annealed at temperature above 500 °C under a N 2 atmosphere. A homogeneous and compositionally uniform film with single CZTS phase was obtained. Film composition featuring larger grains, which is desirable in photovoltaic cells, was obtained with heat treatment at 540 °C. The grain size was up to 1 μm and the Cu/(Zn + Sn) and Zn/Sn ratios were 0.93 and 1.07, respectively and the band gap energy was 1.56 eV.
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The precursor solution was made from CuCl 2 , Zn(ac) 2 , SnCl 2 , thiourea, and 2-methoxyethanol and the spin-coated film was annealed at temperature above 500 °C under a N 2 atmosphere. A homogeneous and compositionally uniform film with single CZTS phase was obtained. Film composition featuring larger grains, which is desirable in photovoltaic cells, was obtained with heat treatment at 540 °C. The grain size was up to 1 μm and the Cu/(Zn + Sn) and Zn/Sn ratios were 0.93 and 1.07, respectively and the band gap energy was 1.56 eV.</description><identifier>ISSN: 0928-0707</identifier><identifier>EISSN: 1573-4846</identifier><identifier>DOI: 10.1007/s10971-012-2703-0</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Absorbers ; Ceramics ; Chemistry ; Chemistry and Materials Science ; Colloidal gels. 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The precursor solution was made from CuCl 2 , Zn(ac) 2 , SnCl 2 , thiourea, and 2-methoxyethanol and the spin-coated film was annealed at temperature above 500 °C under a N 2 atmosphere. A homogeneous and compositionally uniform film with single CZTS phase was obtained. Film composition featuring larger grains, which is desirable in photovoltaic cells, was obtained with heat treatment at 540 °C. The grain size was up to 1 μm and the Cu/(Zn + Sn) and Zn/Sn ratios were 0.93 and 1.07, respectively and the band gap energy was 1.56 eV.</description><subject>Absorbers</subject><subject>Ceramics</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Colloidal gels. 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subjects Absorbers
Ceramics
Chemistry
Chemistry and Materials Science
Colloidal gels. Colloidal sols
Colloidal state and disperse state
Composites
Copper
Copper zinc tin sulfide
CZT
Energy gap
Exact sciences and technology
General and physical chemistry
Glass
Grain size
Heat treatment
Inorganic Chemistry
Materials Science
Methyl cellosolve
Nanotechnology
Natural Materials
Optical and Electronic Materials
Original Paper
Photovoltaic cells
Sol-gel processes
Solar cells
Spin coating
Sulfurization
Thin films
Tin
Zinc
title Sol–gel processed Cu2ZnSnS4 thin films for a photovoltaic absorber layer without sulfurization
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