Performance characteristics of p-i-n hetero-junction organic photovoltaic cell with CuPc:F sub(4-TCNQ hole transport layer)

We have investigated the effect of strong p-type organic semiconductor F sub(4-TCNQ-doped CuPc hole transport layer on the performance of p-i-n hetero-junction photovoltaic device from ITO/PEDOT:PSS/CuPc:F) sub(4)-TCNQ (5 wt%)/CuPc:C60 (blending ratio 1:1)/C60/BCP/LiF/Al, fabricated via vacuum depos...

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Veröffentlicht in:	Journal of industrial and engineering chemistry (Seoul, Korea) Korea), 2011-07, Vol.17 (4), p.799-804
Hauptverfasser:	Senthilkumar, Natarajan, Park, Sohyun, Kang, Hak-Su, Park, Dae Won, Choe, Youngson
Format:	Artikel
Sprache:	eng
Schlagworte:	Buckminsterfullerene Devices Energy conversion efficiency Fullerenes Indium tin oxide Photovoltaic cells Solar cells Transport
Online-Zugang:	Volltext
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