Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains

Using polarized Raman spectroscopy and high resolution X-ray diffraction we have investigated self-organized In 0.45 Ga 0.55 As quantum-dot chains in InGaAs/GaAs multilayer structures. It is shown that the formation of InGaAs QDs in InGaAs/GaAs multilayered structures is accompanied by a strong impr...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2008-09, Vol.19 (8-9), p.692-698
Hauptverfasser:	Strelchuk, V. V., Mazur, Yu. I., Wang, Zh. M., Schmidbauer, M., Kolomys, O. F., Valakh, M. Ya, Manasreh, M. O., Salamo, G. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Fullerenes and related materials Gallium arsenide Gallium arsenides Indium gallium arsenides Infrared and raman spectra and scattering Materials Science Molecular electronics, nanoelectronics Nanoscale materials and structures: fabrication and characterization Optical and Electronic Materials Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Order disorder Physics Quantum dots Raman spectroscopy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid-fluid interfaces Spectrum analysis Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Two dimensional Wetting
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