Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains
Using polarized Raman spectroscopy and high resolution X-ray diffraction we have investigated self-organized In 0.45 Ga 0.55 As quantum-dot chains in InGaAs/GaAs multilayer structures. It is shown that the formation of InGaAs QDs in InGaAs/GaAs multilayered structures is accompanied by a strong impr...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2008-09, Vol.19 (8-9), p.692-698 |
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| creator | Strelchuk, V. V. Mazur, Yu. I. Wang, Zh. M. Schmidbauer, M. Kolomys, O. F. Valakh, M. Ya Manasreh, M. O. Salamo, G. J. |
| description | Using polarized Raman spectroscopy and high resolution X-ray diffraction we have investigated self-organized In
0.45
Ga
0.55
As quantum-dot chains in InGaAs/GaAs multilayer structures. It is shown that the formation of InGaAs QDs in InGaAs/GaAs multilayered structures is accompanied by a strong improvement in the uniformity of size and shapes of QDs as well as vertical alignment and lateral ordering. At mean densities, extended chains of QDs (up to 5 μm) appear along the
direction; however, increased ordering of QDs along the [110] direction could be observed, too. For the first time, InGaAs dot-chains were investigated using polarized Raman scattering. Observation of optical phonons localized in InGaAs QDs and two-dimensional (2D) layers is demonstrated. An obvious anisotropy in the intensity of Raman modes was observed when the electric field vector of the exciting laser beam is parallel or perpendicular to the wire-like axis
of dot-chains. This effect may be related to symmetry lowering effects and real anisotropic geometry of the QDs and 2D wetting layers. |
| doi_str_mv | 10.1007/s10854-007-9381-7 |
| format | Article |
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0.45
Ga
0.55
As quantum-dot chains in InGaAs/GaAs multilayer structures. It is shown that the formation of InGaAs QDs in InGaAs/GaAs multilayered structures is accompanied by a strong improvement in the uniformity of size and shapes of QDs as well as vertical alignment and lateral ordering. At mean densities, extended chains of QDs (up to 5 μm) appear along the
direction; however, increased ordering of QDs along the [110] direction could be observed, too. For the first time, InGaAs dot-chains were investigated using polarized Raman scattering. Observation of optical phonons localized in InGaAs QDs and two-dimensional (2D) layers is demonstrated. An obvious anisotropy in the intensity of Raman modes was observed when the electric field vector of the exciting laser beam is parallel or perpendicular to the wire-like axis
of dot-chains. This effect may be related to symmetry lowering effects and real anisotropic geometry of the QDs and 2D wetting layers.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-007-9381-7</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Anisotropy ; Applied sciences ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; Fullerenes and related materials ; Gallium arsenide ; Gallium arsenides ; Indium gallium arsenides ; Infrared and raman spectra and scattering ; Materials Science ; Molecular electronics, nanoelectronics ; Nanoscale materials and structures: fabrication and characterization ; Optical and Electronic Materials ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Order disorder ; Physics ; Quantum dots ; Raman spectroscopy ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solid-fluid interfaces ; Spectrum analysis ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Two dimensional ; Wetting</subject><ispartof>Journal of materials science. Materials in electronics, 2008-09, Vol.19 (8-9), p.692-698</ispartof><rights>Springer Science+Business Media, LLC 2007</rights><rights>2015 INIST-CNRS</rights><rights>Springer Science+Business Media, LLC 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-22fc3e8ee0b11d6e3f70a71b74f93c6085cc1b1c95381c59df90f71a101a7d183</citedby><cites>FETCH-LOGICAL-c378t-22fc3e8ee0b11d6e3f70a71b74f93c6085cc1b1c95381c59df90f71a101a7d183</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-007-9381-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-007-9381-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>309,310,314,778,782,787,788,23919,23920,25129,27913,27914,41477,42546,51308</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23743782$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Strelchuk, V. V.</creatorcontrib><creatorcontrib>Mazur, Yu. I.</creatorcontrib><creatorcontrib>Wang, Zh. M.</creatorcontrib><creatorcontrib>Schmidbauer, M.</creatorcontrib><creatorcontrib>Kolomys, O. F.</creatorcontrib><creatorcontrib>Valakh, M. Ya</creatorcontrib><creatorcontrib>Manasreh, M. O.</creatorcontrib><creatorcontrib>Salamo, G. J.</creatorcontrib><title>Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Using polarized Raman spectroscopy and high resolution X-ray diffraction we have investigated self-organized In
0.45
Ga
0.55
As quantum-dot chains in InGaAs/GaAs multilayer structures. It is shown that the formation of InGaAs QDs in InGaAs/GaAs multilayered structures is accompanied by a strong improvement in the uniformity of size and shapes of QDs as well as vertical alignment and lateral ordering. At mean densities, extended chains of QDs (up to 5 μm) appear along the
direction; however, increased ordering of QDs along the [110] direction could be observed, too. For the first time, InGaAs dot-chains were investigated using polarized Raman scattering. Observation of optical phonons localized in InGaAs QDs and two-dimensional (2D) layers is demonstrated. An obvious anisotropy in the intensity of Raman modes was observed when the electric field vector of the exciting laser beam is parallel or perpendicular to the wire-like axis
of dot-chains. This effect may be related to symmetry lowering effects and real anisotropic geometry of the QDs and 2D wetting layers.</description><subject>Anisotropy</subject><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Indium gallium arsenides</subject><subject>Infrared and raman spectra and scattering</subject><subject>Materials Science</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Order disorder</subject><subject>Physics</subject><subject>Quantum dots</subject><subject>Raman spectroscopy</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Solid-fluid interfaces</subject><subject>Spectrum analysis</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Two dimensional</subject><subject>Wetting</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kEFLHTEUhYNU8FX7A9yFQkEXqblJZpJZiqgVhIpYcBfvyyTtyLzMmMwsnr--GZ5YELq59y7OPZzzEXIM_Dtwrs8ycFMpVk7WSANM75EVVFoyZcTjJ7LiTaWZqoQ4IJ9zfuac10qaFXm6G3pM3atv6T1uMNI8ejelIbth3FKMLX1kCbe07UKYs6fZ4TT51MXftIv0Jl7jeT5bxkmJcUpfZozTvGHtMFH3B7uYj8h-wD77L2_7kPy6uny4-MFuf17fXJzfMie1mZgQwUlvvOdrgLb2MmiOGtZahUa6upRzDtbgmqq0c1XThoYHDQgcULdg5CE52fmOaXiZfZ7spsvO9z1GP8zZQq1B1qpWoki_fpA-D3OKJZ1tQCpjtOBFBDuRKzBy8sGOqdtg2lrgdkFud8jtci7IrS4_396MsXDqQ8Louvz-KKRWpewSQOx0eVxI-vQvwP_N_wLNCY9c</recordid><startdate>20080901</startdate><enddate>20080901</enddate><creator>Strelchuk, V. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solid-fluid interfaces</topic><topic>Spectrum analysis</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Two dimensional</topic><topic>Wetting</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Strelchuk, V. V.</creatorcontrib><creatorcontrib>Mazur, Yu. I.</creatorcontrib><creatorcontrib>Wang, Zh. M.</creatorcontrib><creatorcontrib>Schmidbauer, M.</creatorcontrib><creatorcontrib>Kolomys, O. F.</creatorcontrib><creatorcontrib>Valakh, M. Ya</creatorcontrib><creatorcontrib>Manasreh, M. O.</creatorcontrib><creatorcontrib>Salamo, G. 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Strelchuk, V. V.</au><au>Mazur, Yu. I.</au><au>Wang, Zh. M.</au><au>Schmidbauer, M.</au><au>Kolomys, O. F.</au><au>Valakh, M. Ya</au><au>Manasreh, M. O.</au><au>Salamo, G. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2008-09-01</date><risdate>2008</risdate><volume>19</volume><issue>8-9</issue><spage>692</spage><epage>698</epage><pages>692-698</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Using polarized Raman spectroscopy and high resolution X-ray diffraction we have investigated self-organized In
0.45
Ga
0.55
As quantum-dot chains in InGaAs/GaAs multilayer structures. It is shown that the formation of InGaAs QDs in InGaAs/GaAs multilayered structures is accompanied by a strong improvement in the uniformity of size and shapes of QDs as well as vertical alignment and lateral ordering. At mean densities, extended chains of QDs (up to 5 μm) appear along the
direction; however, increased ordering of QDs along the [110] direction could be observed, too. For the first time, InGaAs dot-chains were investigated using polarized Raman scattering. Observation of optical phonons localized in InGaAs QDs and two-dimensional (2D) layers is demonstrated. An obvious anisotropy in the intensity of Raman modes was observed when the electric field vector of the exciting laser beam is parallel or perpendicular to the wire-like axis
of dot-chains. This effect may be related to symmetry lowering effects and real anisotropic geometry of the QDs and 2D wetting layers.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10854-007-9381-7</doi><tpages>7</tpages></addata></record> |
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| ispartof | Journal of materials science. Materials in electronics, 2008-09, Vol.19 (8-9), p.692-698 |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Anisotropy Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Fullerenes and related materials Gallium arsenide Gallium arsenides Indium gallium arsenides Infrared and raman spectra and scattering Materials Science Molecular electronics, nanoelectronics Nanoscale materials and structures: fabrication and characterization Optical and Electronic Materials Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Order disorder Physics Quantum dots Raman spectroscopy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid-fluid interfaces Spectrum analysis Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Two dimensional Wetting |
| title | Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains |
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