Electronic structure of asymmetric vertically coupled InAs/GaAs quantum dots
In this paper, the electronic structure of an asymmetric self-assembled vertically coupled quantum dots heterostructure has been investigated. The structure consists of two ellipsoidal quantum dot (QDs) caps made with InAs embedded in a wetting layer InAs and surrounded by GaAs. Using the strain dep...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2012-04, Vol.407 (7), p.1157-1160 |
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| container_title | Physica. B, Condensed matter |
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| creator | Stavrou, V.N. |
| description | In this paper, the electronic structure of an asymmetric self-assembled vertically coupled quantum dots heterostructure has been investigated. The structure consists of two ellipsoidal quantum dot (QDs) caps made with InAs embedded in a wetting layer InAs and surrounded by GaAs. Using the strain dependent k·p theory, the energy of the two lowest states of a single electron/hole which is confined within the coupled QD structure has been calculated. As a result, it can be estimated the energy gap for different geometry parameters and for tuning the external magnetic field. The numerical results show that the energy gap is very sensitive to the size asymmetry of the structure and to the small separation distance of the dots but less sensitive to the existence of an external magnetic field and large interdot distance. |
| doi_str_mv | 10.1016/j.physb.2012.01.105 |
| format | Article |
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The structure consists of two ellipsoidal quantum dot (QDs) caps made with InAs embedded in a wetting layer InAs and surrounded by GaAs. Using the strain dependent k·p theory, the energy of the two lowest states of a single electron/hole which is confined within the coupled QD structure has been calculated. As a result, it can be estimated the energy gap for different geometry parameters and for tuning the external magnetic field. The numerical results show that the energy gap is very sensitive to the size asymmetry of the structure and to the small separation distance of the dots but less sensitive to the existence of an external magnetic field and large interdot distance.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2012.01.105</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Asymmetric SAQDs ; Asymmetry ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems ; Electronic structure ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Energy gap ; Exact sciences and technology ; Gallium arsenide ; Gallium arsenides ; Indium arsenides ; Magnetic fields ; Physics ; Quantum dots ; Qubits</subject><ispartof>Physica. 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The numerical results show that the energy gap is very sensitive to the size asymmetry of the structure and to the small separation distance of the dots but less sensitive to the existence of an external magnetic field and large interdot distance.</description><subject>Asymmetric SAQDs</subject><subject>Asymmetry</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</subject><subject>Electronic structure</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Energy gap</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Indium arsenides</subject><subject>Magnetic fields</subject><subject>Physics</subject><subject>Quantum dots</subject><subject>Qubits</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKufwMteBC9bM0mT3R48FKm1UPCi5xCzE0zZPzWTFfrtjVY8OpeBx3szvB9j18BnwEHf7Wb79wO9zQQHMeOQRXXCJlBXshQg1Smb8IWAcq6EPmcXRDueByqYsO2qRZfi0AdXUIqjS2PEYvCFpUPXYYpZ_8SYgrNteyjcMO5bbIpNv6S7tV1S8THaPo1d0QyJLtmZty3h1e-estfH1cvDU7l9Xm8eltvSSa1TiZJ7K2unLXhuua8XIHglHMwVl7rW2ipQi6b2KLysnJ8v3rxCi9o3qDl3cspuj3f3cfgYkZLpAjlsW9vjMJIBXYHUUgiZrfJodXEgiujNPobOxoMBbr7ZmZ35YWe-2RkOWVQ5dfP7wFIu7qPtXaC_qFCV0Lri2Xd_9GFu-xkwGnIBe4dNiBmraYbw758vcBuGUQ</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Stavrou, V.N.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120401</creationdate><title>Electronic structure of asymmetric vertically coupled InAs/GaAs quantum dots</title><author>Stavrou, V.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c366t-e30fa38c6a1f0a0f8912072c145036866a5159d8fe2f37cf49bf5eae6fde600c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Asymmetric SAQDs</topic><topic>Asymmetry</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</topic><topic>Electronic structure</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Energy gap</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Indium arsenides</topic><topic>Magnetic fields</topic><topic>Physics</topic><topic>Quantum dots</topic><topic>Qubits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Stavrou, V.N.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. 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| ispartof | Physica. B, Condensed matter, 2012-04, Vol.407 (7), p.1157-1160 |
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| subjects | Asymmetric SAQDs Asymmetry Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Energy gap Exact sciences and technology Gallium arsenide Gallium arsenides Indium arsenides Magnetic fields Physics Quantum dots Qubits |
| title | Electronic structure of asymmetric vertically coupled InAs/GaAs quantum dots |
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