Two photon absorption characteristics of bulk GaTe crystal

We have investigated the structural and optical properties of bulk GaTe crystal grown by vertical Bridgman method. Two photon absorption (TPA) properties of GaTe crystal have been investigated by the open aperture Z-scan technique under 1064nm wavelength with 4ns or 65ps pulse durations. The TPA coe...

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Veröffentlicht in:	Optics and laser technology 2012-10, Vol.44 (7), p.2178-2181
Hauptverfasser:	Yüksek, Mustafa, Ertap, Hüseyin, Elmali, Ayhan, Gul Yaglioglu, H., Mamedov, Gasan M., Karabulut, Mevlüt, Öztürk, Mustafa K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal growth Crystals Excitation GaTe crystal Gates Incident light Nanocomposites Nanostructure Nonlinear absorption Photon absorption Two photon absorption Z-scan
Online-Zugang:	Volltext
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