Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors

We report on SOCl2 doping of separated single‐walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electric...

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Veröffentlicht in:	Physica Status Solidi (b) 2011-11, Vol.248 (11), p.2668-2671
Hauptverfasser:	Kim, D. H., Lee, J. K., Huh, J. H., Kim, Y. H., Kim, G. T., Roth, S., Dettlaff-Weglikowska, U.
Format:	Artikel
Sprache:	eng
Schlagworte:	Conductivity Doping Networks p-type P-type semiconductors Resistivity Silicon substrates Single wall carbon nanotubes SOCl2 SWCNTs Thin film transistors
Online-Zugang:	Volltext
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