Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors
We report on SOCl2 doping of separated single‐walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electric...
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| Veröffentlicht in: | Physica Status Solidi (b) 2011-11, Vol.248 (11), p.2668-2671 |
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| container_title | Physica Status Solidi (b) |
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| creator | Kim, D. H. Lee, J. K. Huh, J. H. Kim, Y. H. Kim, G. T. Roth, S. Dettlaff-Weglikowska, U. |
| description | We report on SOCl2 doping of separated single‐walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p‐type transfer characteristics. After SOCl2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p‐type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping. |
| doi_str_mv | 10.1002/pssb.201100106 |
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H. ; Lee, J. K. ; Huh, J. H. ; Kim, Y. H. ; Kim, G. T. ; Roth, S. ; Dettlaff-Weglikowska, U.</creator><creatorcontrib>Kim, D. H. ; Lee, J. K. ; Huh, J. H. ; Kim, Y. H. ; Kim, G. T. ; Roth, S. ; Dettlaff-Weglikowska, U.</creatorcontrib><description>We report on SOCl2 doping of separated single‐walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p‐type transfer characteristics. After SOCl2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p‐type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping.</description><identifier>ISSN: 0370-1972</identifier><identifier>ISSN: 1521-3951</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.201100106</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Conductivity ; Doping ; Networks ; p-type ; P-type semiconductors ; Resistivity ; Silicon substrates ; Single wall carbon nanotubes ; SOCl2 ; SWCNTs ; Thin film transistors</subject><ispartof>Physica Status Solidi (b), 2011-11, Vol.248 (11), p.2668-2671</ispartof><rights>Copyright © 2011 WILEY‐VCH Verlag GmbH & Co. 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T.</creatorcontrib><creatorcontrib>Roth, S.</creatorcontrib><creatorcontrib>Dettlaff-Weglikowska, U.</creatorcontrib><title>Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors</title><title>Physica Status Solidi (b)</title><addtitle>Phys. Status Solidi B</addtitle><description>We report on SOCl2 doping of separated single‐walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p‐type transfer characteristics. After SOCl2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p‐type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping.</description><subject>Conductivity</subject><subject>Doping</subject><subject>Networks</subject><subject>p-type</subject><subject>P-type semiconductors</subject><subject>Resistivity</subject><subject>Silicon substrates</subject><subject>Single wall carbon nanotubes</subject><subject>SOCl2</subject><subject>SWCNTs</subject><subject>Thin film transistors</subject><issn>0370-1972</issn><issn>1521-3951</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNo9kEFvGyEQhVHUSHGdXHPm2MsmDJiFPbaWa1dyk0hO1SNi2aGlxbtbWCvJvw-WK59GT_O90bxHyC2wO2CM3485t3ecQRHA6gsyA8mhEo2ED2TGhGIVNIpfkY85_2GMKRAwI37lPbqJDp7uHpeR024YQ_-LDj3FWBZp6IOjYxpGTFPAfARzASJWLzZG7KizqS10b_thOrRIp9-hpz7EPZ2S7XPI05DyNbn0Nma8-T_n5MfX1fNyU20f19-Wn7dV4Kquq4X0uuZO2ppj51rkXnvNAX2LnddKOyYWTDspwOumJIIF75hysBBW6A6kmJNPp7vl438HzJPZh-wwRtvjcMgG6hJbaq1ZQZsT-hIivpkxhb1NbwaYObZpjm2ac5vmabf7clbFW528JR2-nr02_TW1Ekqanw9r833LGiU3zwbEOzgIews</recordid><startdate>201111</startdate><enddate>201111</enddate><creator>Kim, D. H.</creator><creator>Lee, J. K.</creator><creator>Huh, J. H.</creator><creator>Kim, Y. H.</creator><creator>Kim, G. T.</creator><creator>Roth, S.</creator><creator>Dettlaff-Weglikowska, U.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201111</creationdate><title>Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors</title><author>Kim, D. H. ; Lee, J. K. ; Huh, J. H. ; Kim, Y. H. ; Kim, G. T. ; Roth, S. ; Dettlaff-Weglikowska, U.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2766-45f862c5a62edcbe2f8f821efbedf878c03408c531f89370142d07c143a38d153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Conductivity</topic><topic>Doping</topic><topic>Networks</topic><topic>p-type</topic><topic>P-type semiconductors</topic><topic>Resistivity</topic><topic>Silicon substrates</topic><topic>Single wall carbon nanotubes</topic><topic>SOCl2</topic><topic>SWCNTs</topic><topic>Thin film transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, D. H.</creatorcontrib><creatorcontrib>Lee, J. K.</creatorcontrib><creatorcontrib>Huh, J. H.</creatorcontrib><creatorcontrib>Kim, Y. H.</creatorcontrib><creatorcontrib>Kim, G. T.</creatorcontrib><creatorcontrib>Roth, S.</creatorcontrib><creatorcontrib>Dettlaff-Weglikowska, U.</creatorcontrib><collection>Istex</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica Status Solidi (b)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, D. H.</au><au>Lee, J. K.</au><au>Huh, J. H.</au><au>Kim, Y. H.</au><au>Kim, G. T.</au><au>Roth, S.</au><au>Dettlaff-Weglikowska, U.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors</atitle><jtitle>Physica Status Solidi (b)</jtitle><addtitle>Phys. Status Solidi B</addtitle><date>2011-11</date><risdate>2011</risdate><volume>248</volume><issue>11</issue><spage>2668</spage><epage>2671</epage><pages>2668-2671</pages><issn>0370-1972</issn><issn>1521-3951</issn><eissn>1521-3951</eissn><abstract>We report on SOCl2 doping of separated single‐walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p‐type transfer characteristics. After SOCl2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p‐type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssb.201100106</doi><tpages>4</tpages></addata></record> |
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| source | Wiley-Blackwell Full Collection |
| subjects | Conductivity Doping Networks p-type P-type semiconductors Resistivity Silicon substrates Single wall carbon nanotubes SOCl2 SWCNTs Thin film transistors |
| title | Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors |
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