Excitation dependent photoluminescence study of Si-rich a -SiNx:H thin films

We report photoluminescence (PL) investigations on Si-rich amorphous hydrogenated silicon nitride (a-SiNx:H) thin films of different compositions, using three different excitation lasers, viz., 325 nm, 410 nm, and 532 nm. The as-deposited films contain amorphous Si quantum dots (QDs) as evidenced in...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 2012-12, Vol.112 (12)
Hauptverfasser:	Kumar Bommali, Ravi, Preet Singh, Sarab, Rai, Sanjay, Mishra, P., Sekhar, B. R., Vijaya Prakash, G., Srivastava, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Defect annealing Excitation Luminescence Photoluminescence Quantum confinement Spectra Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue	12
container_start_page
container_title	Journal of applied physics
container_volume	112
creator	Kumar Bommali, Ravi Preet Singh, Sarab Rai, Sanjay Mishra, P. Sekhar, B. R. Vijaya Prakash, G. Srivastava, P.
description	We report photoluminescence (PL) investigations on Si-rich amorphous hydrogenated silicon nitride (a-SiNx:H) thin films of different compositions, using three different excitation lasers, viz., 325 nm, 410 nm, and 532 nm. The as-deposited films contain amorphous Si quantum dots (QDs) as evidenced in high resolution transmission electron microscopy images. The PL spectral shape is in general seen to change with the excitation used, thus emphasizing the presence of multiple luminescence centres in these films. It is found that all the spectra so obtained can be deconvoluted assuming Gaussian contributions from defects and quantum confinement effect. Further strength to this assignment is provided by low temperature (300 °C) hydrogen plasma annealing of these samples, wherein a preferential enhancement of the QD luminescence over defect luminescence is observed.
doi_str_mv	10.1063/1.4770375
format	Article
fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671349270</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1671349270</sourcerecordid><originalsourceid>FETCH-LOGICAL-c262t-e543ebbee9b5c3a931a46631d66e1d4414810d16baf7ddc94912cc59c8b74f2d3</originalsourceid><addsrcrecordid>eNot0M1KAzEUBeAgCtbqwjfIUhepuZNMMnEnpVqh6KK6HjLJHRqZPycZaN_eSrs6m8Ph8BFyD3wBXIknWEitudD5BZkBLwzTec4vyYzzDFhhtLkmNzH-cA5QCDMjm9XehWRT6DvqccDOY5fosOtT30xt6DA67BzSmCZ_oH1Nt4GNwe2opWwbPvbPa5p2oaN1aNp4S65q20S8O-ecfL-uvpZrtvl8e1--bJjLVJYY5lJgVSGaKnfCGgFWKiXAK4XgpQRZAPegKltr752RBjLncuOKSss682JOHk67w9j_ThhT2Ybjz6axHfZTLEFpENJkR4g5eTxV3djHOGJdDmNo7XgogZf_YiWUZzHxBxCyXSk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671349270</pqid></control><display><type>article</type><title>Excitation dependent photoluminescence study of Si-rich a -SiNx:H thin films</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Kumar Bommali, Ravi ; Preet Singh, Sarab ; Rai, Sanjay ; Mishra, P. ; Sekhar, B. R. ; Vijaya Prakash, G. ; Srivastava, P.</creator><creatorcontrib>Kumar Bommali, Ravi ; Preet Singh, Sarab ; Rai, Sanjay ; Mishra, P. ; Sekhar, B. R. ; Vijaya Prakash, G. ; Srivastava, P.</creatorcontrib><description>We report photoluminescence (PL) investigations on Si-rich amorphous hydrogenated silicon nitride (a-SiNx:H) thin films of different compositions, using three different excitation lasers, viz., 325 nm, 410 nm, and 532 nm. The as-deposited films contain amorphous Si quantum dots (QDs) as evidenced in high resolution transmission electron microscopy images. The PL spectral shape is in general seen to change with the excitation used, thus emphasizing the presence of multiple luminescence centres in these films. It is found that all the spectra so obtained can be deconvoluted assuming Gaussian contributions from defects and quantum confinement effect. Further strength to this assignment is provided by low temperature (300 °C) hydrogen plasma annealing of these samples, wherein a preferential enhancement of the QD luminescence over defect luminescence is observed.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4770375</identifier><language>eng</language><subject>Defect annealing ; Excitation ; Luminescence ; Photoluminescence ; Quantum confinement ; Spectra ; Thin films</subject><ispartof>Journal of applied physics, 2012-12, Vol.112 (12)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c262t-e543ebbee9b5c3a931a46631d66e1d4414810d16baf7ddc94912cc59c8b74f2d3</citedby><cites>FETCH-LOGICAL-c262t-e543ebbee9b5c3a931a46631d66e1d4414810d16baf7ddc94912cc59c8b74f2d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kumar Bommali, Ravi</creatorcontrib><creatorcontrib>Preet Singh, Sarab</creatorcontrib><creatorcontrib>Rai, Sanjay</creatorcontrib><creatorcontrib>Mishra, P.</creatorcontrib><creatorcontrib>Sekhar, B. R.</creatorcontrib><creatorcontrib>Vijaya Prakash, G.</creatorcontrib><creatorcontrib>Srivastava, P.</creatorcontrib><title>Excitation dependent photoluminescence study of Si-rich a -SiNx:H thin films</title><title>Journal of applied physics</title><description>We report photoluminescence (PL) investigations on Si-rich amorphous hydrogenated silicon nitride (a-SiNx:H) thin films of different compositions, using three different excitation lasers, viz., 325 nm, 410 nm, and 532 nm. The as-deposited films contain amorphous Si quantum dots (QDs) as evidenced in high resolution transmission electron microscopy images. The PL spectral shape is in general seen to change with the excitation used, thus emphasizing the presence of multiple luminescence centres in these films. It is found that all the spectra so obtained can be deconvoluted assuming Gaussian contributions from defects and quantum confinement effect. Further strength to this assignment is provided by low temperature (300 °C) hydrogen plasma annealing of these samples, wherein a preferential enhancement of the QD luminescence over defect luminescence is observed.</description><subject>Defect annealing</subject><subject>Excitation</subject><subject>Luminescence</subject><subject>Photoluminescence</subject><subject>Quantum confinement</subject><subject>Spectra</subject><subject>Thin films</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNot0M1KAzEUBeAgCtbqwjfIUhepuZNMMnEnpVqh6KK6HjLJHRqZPycZaN_eSrs6m8Ph8BFyD3wBXIknWEitudD5BZkBLwzTec4vyYzzDFhhtLkmNzH-cA5QCDMjm9XehWRT6DvqccDOY5fosOtT30xt6DA67BzSmCZ_oH1Nt4GNwe2opWwbPvbPa5p2oaN1aNp4S65q20S8O-ecfL-uvpZrtvl8e1--bJjLVJYY5lJgVSGaKnfCGgFWKiXAK4XgpQRZAPegKltr752RBjLncuOKSss682JOHk67w9j_ThhT2Ybjz6axHfZTLEFpENJkR4g5eTxV3djHOGJdDmNo7XgogZf_YiWUZzHxBxCyXSk</recordid><startdate>20121215</startdate><enddate>20121215</enddate><creator>Kumar Bommali, Ravi</creator><creator>Preet Singh, Sarab</creator><creator>Rai, Sanjay</creator><creator>Mishra, P.</creator><creator>Sekhar, B. R.</creator><creator>Vijaya Prakash, G.</creator><creator>Srivastava, P.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20121215</creationdate><title>Excitation dependent photoluminescence study of Si-rich a -SiNx:H thin films</title><author>Kumar Bommali, Ravi ; Preet Singh, Sarab ; Rai, Sanjay ; Mishra, P. ; Sekhar, B. R. ; Vijaya Prakash, G. ; Srivastava, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c262t-e543ebbee9b5c3a931a46631d66e1d4414810d16baf7ddc94912cc59c8b74f2d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Defect annealing</topic><topic>Excitation</topic><topic>Luminescence</topic><topic>Photoluminescence</topic><topic>Quantum confinement</topic><topic>Spectra</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumar Bommali, Ravi</creatorcontrib><creatorcontrib>Preet Singh, Sarab</creatorcontrib><creatorcontrib>Rai, Sanjay</creatorcontrib><creatorcontrib>Mishra, P.</creatorcontrib><creatorcontrib>Sekhar, B. R.</creatorcontrib><creatorcontrib>Vijaya Prakash, G.</creatorcontrib><creatorcontrib>Srivastava, P.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumar Bommali, Ravi</au><au>Preet Singh, Sarab</au><au>Rai, Sanjay</au><au>Mishra, P.</au><au>Sekhar, B. R.</au><au>Vijaya Prakash, G.</au><au>Srivastava, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Excitation dependent photoluminescence study of Si-rich a -SiNx:H thin films</atitle><jtitle>Journal of applied physics</jtitle><date>2012-12-15</date><risdate>2012</risdate><volume>112</volume><issue>12</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>We report photoluminescence (PL) investigations on Si-rich amorphous hydrogenated silicon nitride (a-SiNx:H) thin films of different compositions, using three different excitation lasers, viz., 325 nm, 410 nm, and 532 nm. The as-deposited films contain amorphous Si quantum dots (QDs) as evidenced in high resolution transmission electron microscopy images. The PL spectral shape is in general seen to change with the excitation used, thus emphasizing the presence of multiple luminescence centres in these films. It is found that all the spectra so obtained can be deconvoluted assuming Gaussian contributions from defects and quantum confinement effect. Further strength to this assignment is provided by low temperature (300 °C) hydrogen plasma annealing of these samples, wherein a preferential enhancement of the QD luminescence over defect luminescence is observed.</abstract><doi>10.1063/1.4770375</doi></addata></record>
fulltext	fulltext
identifier	ISSN: 0021-8979
ispartof	Journal of applied physics, 2012-12, Vol.112 (12)
issn	0021-8979 1089-7550
language	eng
recordid	cdi_proquest_miscellaneous_1671349270
source	AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects	Defect annealing Excitation Luminescence Photoluminescence Quantum confinement Spectra Thin films
title	Excitation dependent photoluminescence study of Si-rich a -SiNx:H thin films
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T00%3A49%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Excitation%20dependent%20photoluminescence%20study%20of%20Si-rich%20a%20-SiNx:H%20thin%20films&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Kumar%20Bommali,%20Ravi&rft.date=2012-12-15&rft.volume=112&rft.issue=12&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4770375&rft_dat=%3Cproquest_cross%3E1671349270%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671349270&rft_id=info:pmid/&rfr_iscdi=true