Insights for void formation in ion-implanted Ge
The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20–300 keV to doses of 1.0 × 10 13–1.0 × 10 17 cm − 2 . Transmission electron microscopy revealed clusters of voids just below the surface...
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| Veröffentlicht in: | Thin solid films 2011-07, Vol.519 (18), p.5962-5965 |
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| container_issue | 18 |
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| container_title | Thin solid films |
| container_volume | 519 |
| creator | Darby, B.L. Yates, B.R. Rudawski, N.G. Jones, K.S. Kontos, A. Elliman, R.G. |
| description | The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20–300
keV to doses of 1.0
×
10
13–1.0
×
10
17
cm
−
2
. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤
120
keV at a dose of 2.0
×
10
15
cm
−
2
and complete surface coverage for an implant energy of 130
keV and doses ≥
1.0
×
10
16
cm
−
2
. Void clusters did not change in size or density after isothermal annealing at 330
°C for 176
min. The initial void formation is discussed in terms of the vacancy clustering and “microexplosion” theories with a damage map detailing the implant conditions necessary to produce voids. |
| doi_str_mv | 10.1016/j.tsf.2011.03.040 |
| format | Article |
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keV to doses of 1.0
×
10
13–1.0
×
10
17
cm
−
2
. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤
120
keV at a dose of 2.0
×
10
15
cm
−
2
and complete surface coverage for an implant energy of 130
keV and doses ≥
1.0
×
10
16
cm
−
2
. Void clusters did not change in size or density after isothermal annealing at 330
°C for 176
min. The initial void formation is discussed in terms of the vacancy clustering and “microexplosion” theories with a damage map detailing the implant conditions necessary to produce voids.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2011.03.040</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Annealing ; Clusters ; Condensed matter: structure, mechanical and thermal properties ; Defects and impurities in crystals; microstructure ; Density ; Doping and impurity implantation in other materials ; Energy of formation ; Energy transmission ; Exact sciences and technology ; Germanium ; Implants ; Ion implantation ; Microscopic defects (voids, inclusions, etc.) ; Physics ; Structure and morphology; thickness ; Structure of solids and liquids; crystallography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Thin films ; Transmission electron microscopy ; Voids</subject><ispartof>Thin solid films, 2011-07, Vol.519 (18), p.5962-5965</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c426t-1e8d0f9125e380df7d938648a7c33e8de12ee71a144efaf6a46dc15dbf53c5aa3</citedby><cites>FETCH-LOGICAL-c426t-1e8d0f9125e380df7d938648a7c33e8de12ee71a144efaf6a46dc15dbf53c5aa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609011006869$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24303260$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Darby, B.L.</creatorcontrib><creatorcontrib>Yates, B.R.</creatorcontrib><creatorcontrib>Rudawski, N.G.</creatorcontrib><creatorcontrib>Jones, K.S.</creatorcontrib><creatorcontrib>Kontos, A.</creatorcontrib><creatorcontrib>Elliman, R.G.</creatorcontrib><title>Insights for void formation in ion-implanted Ge</title><title>Thin solid films</title><description>The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20–300
keV to doses of 1.0
×
10
13–1.0
×
10
17
cm
−
2
. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤
120
keV at a dose of 2.0
×
10
15
cm
−
2
and complete surface coverage for an implant energy of 130
keV and doses ≥
1.0
×
10
16
cm
−
2
. Void clusters did not change in size or density after isothermal annealing at 330
°C for 176
min. The initial void formation is discussed in terms of the vacancy clustering and “microexplosion” theories with a damage map detailing the implant conditions necessary to produce voids.</description><subject>Annealing</subject><subject>Clusters</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Density</subject><subject>Doping and impurity implantation in other materials</subject><subject>Energy of formation</subject><subject>Energy transmission</subject><subject>Exact sciences and technology</subject><subject>Germanium</subject><subject>Implants</subject><subject>Ion implantation</subject><subject>Microscopic defects (voids, inclusions, etc.)</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><subject>Transmission electron microscopy</subject><subject>Voids</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9UE1LAzEQDaJgrf4Ab3sRvOx2JtlPPEnRWih40XOIyURT9qMm24L_3iwtHoWBGWbeezPzGLtFyBCwXGyzMdiMA2IGIoMcztgM66pJeSXwnM0gttISGrhkVyFsAQA5FzO2WPfBfX6NIbGDTw6DM1PRqdENfeJiDH3qul2r-pFMsqJrdmFVG-jmlOfs_fnpbfmSbl5X6-XjJtU5L8cUqTZgG-QFiRqMrUwj6jKvVaWFiDNCTlShwjwnq2yp8tJoLMyHLYQulBJzdn_U3fnhe09hlJ0Lmtp4CA37ILGsUORVg02E4hGq_RCCJyt33nXK_0gEOZkjtzKaIydzJAgZnYicu5O8Clq11qteu_BH5LkAwcsJ93DEUfz14MjLoB31mozzpEdpBvfPll99gHjB</recordid><startdate>20110701</startdate><enddate>20110701</enddate><creator>Darby, B.L.</creator><creator>Yates, B.R.</creator><creator>Rudawski, N.G.</creator><creator>Jones, K.S.</creator><creator>Kontos, A.</creator><creator>Elliman, R.G.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110701</creationdate><title>Insights for void formation in ion-implanted Ge</title><author>Darby, B.L. ; Yates, B.R. ; Rudawski, N.G. ; Jones, K.S. ; Kontos, A. ; Elliman, R.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-1e8d0f9125e380df7d938648a7c33e8de12ee71a144efaf6a46dc15dbf53c5aa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Annealing</topic><topic>Clusters</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Density</topic><topic>Doping and impurity implantation in other materials</topic><topic>Energy of formation</topic><topic>Energy transmission</topic><topic>Exact sciences and technology</topic><topic>Germanium</topic><topic>Implants</topic><topic>Ion implantation</topic><topic>Microscopic defects (voids, inclusions, etc.)</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><topic>Transmission electron microscopy</topic><topic>Voids</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Darby, B.L.</creatorcontrib><creatorcontrib>Yates, B.R.</creatorcontrib><creatorcontrib>Rudawski, N.G.</creatorcontrib><creatorcontrib>Jones, K.S.</creatorcontrib><creatorcontrib>Kontos, A.</creatorcontrib><creatorcontrib>Elliman, R.G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Darby, B.L.</au><au>Yates, B.R.</au><au>Rudawski, N.G.</au><au>Jones, K.S.</au><au>Kontos, A.</au><au>Elliman, R.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Insights for void formation in ion-implanted Ge</atitle><jtitle>Thin solid films</jtitle><date>2011-07-01</date><risdate>2011</risdate><volume>519</volume><issue>18</issue><spage>5962</spage><epage>5965</epage><pages>5962-5965</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20–300
keV to doses of 1.0
×
10
13–1.0
×
10
17
cm
−
2
. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤
120
keV at a dose of 2.0
×
10
15
cm
−
2
and complete surface coverage for an implant energy of 130
keV and doses ≥
1.0
×
10
16
cm
−
2
. Void clusters did not change in size or density after isothermal annealing at 330
°C for 176
min. The initial void formation is discussed in terms of the vacancy clustering and “microexplosion” theories with a damage map detailing the implant conditions necessary to produce voids.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2011.03.040</doi><tpages>4</tpages></addata></record> |
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| ispartof | Thin solid films, 2011-07, Vol.519 (18), p.5962-5965 |
| issn | 0040-6090 1879-2731 |
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| source | Elsevier ScienceDirect Journals |
| subjects | Annealing Clusters Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Density Doping and impurity implantation in other materials Energy of formation Energy transmission Exact sciences and technology Germanium Implants Ion implantation Microscopic defects (voids, inclusions, etc.) Physics Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films Transmission electron microscopy Voids |
| title | Insights for void formation in ion-implanted Ge |
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