A single electron bipolar avalanche transistor implemented in 90 nm CMOS

A single electron bipolar avalanche transistor implemented in 90 nm CMOS

► 90nm CMOS implementation with high voltage compatibility. ► 120dB (10Hz–10MHz) dynamic range. ► Attoampere sensitivity. ► Demonstration of single transistor analogue-to-digital converter. A Single Electron Bipolar Avalanche Transistor (SEBAT) with attoampere sensitivity and ≈10Hz off-count rate is...

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Veröffentlicht in:Solid-state electronics 2012-10, Vol.76, p.116-118
Hauptverfasser: Webster, Eric A.G., Richardson, Justin A., Grant, Lindsay A., Henderson, Robert K.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Avalanche
Avalanche bipolar transistors
Avalanche transistors
Bipolar junction transistors
Circuit properties
CMOS
Design. Technologies. Operation analysis. Testing
Dynamic range
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Geiger-mode avalanche
Integrated circuits
Molecular electronics, nanoelectronics
Noise levels
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal convertors
Single electron bipolar avalanche transistors
Single electrons
Transistors
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Beschreibung
Zusammenfassung:► 90nm CMOS implementation with high voltage compatibility. ► 120dB (10Hz–10MHz) dynamic range. ► Attoampere sensitivity. ► Demonstration of single transistor analogue-to-digital converter. A Single Electron Bipolar Avalanche Transistor (SEBAT) with attoampere sensitivity and ≈10Hz off-count rate is successfully integrated into 90nm CMOS. The reported SEBAT has 120dB (10Hz–10MHz) dynamic range corresponding to 0–0.35VBE, and an IE ≈10−18–10−12A. Single-transistor ADC operation of the SEBAT is demonstrated by AC-coupling signals into the base.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2012.05.002