Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks
The inversion-layer capacitance C inv of electrons in high- k /metal gate stacks (HKMGs) is studied theoretically and experimentally from the viewpoint of the penetration of electrons into the dielectrics. The numerical calculation of C inv in the dielectric/substrate bilayer structure has clarified...
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| Veröffentlicht in: | IEEE transactions on electron devices 2010-11, Vol.57 (11), p.2814-2820 |
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| container_issue | 11 |
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| container_title | IEEE transactions on electron devices |
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| creator | Iijima, R Edge, L F Paruchuri, V Takayanagi, M |
| description | The inversion-layer capacitance C inv of electrons in high- k /metal gate stacks (HKMGs) is studied theoretically and experimentally from the viewpoint of the penetration of electrons into the dielectrics. The numerical calculation of C inv in the dielectric/substrate bilayer structure has clarified the influence of penetration on C inv . C inv in an HKMG is evaluated experimentally and is compared with the computational predictions in terms of the dependence on the dielectric boundary and the silicon crystal orientation. The consistency of the experiment and the calculation is the first evidence for the considerable modulation of C inv due to penetration in the actual HKMG. Moreover, the dependence of C inv on substrate biasing is investigated. The detailed analysis of C inv in the system where the confinement of the inversion layer is intentionally changed has led to a further understanding of C inv determined by penetration. |
| doi_str_mv | 10.1109/TED.2010.2064317 |
| format | Article |
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The numerical calculation of C inv in the dielectric/substrate bilayer structure has clarified the influence of penetration on C inv . C inv in an HKMG is evaluated experimentally and is compared with the computational predictions in terms of the dependence on the dielectric boundary and the silicon crystal orientation. The consistency of the experiment and the calculation is the first evidence for the considerable modulation of C inv due to penetration in the actual HKMG. Moreover, the dependence of C inv on substrate biasing is investigated. The detailed analysis of C inv in the system where the confinement of the inversion layer is intentionally changed has led to a further understanding of C inv determined by penetration.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2010.2064317</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Boundaries ; Capacitance ; Consistency ; Dielectrics ; Electronics ; Equivalent oxide thickness ; Exact sciences and technology ; gate capacitance ; Gates ; High K dielectric materials ; high- k /metal gate stack (HKMG) ; high- k dielectric ; inversion layer ; Mathematical analysis ; metal gate ; metal-oxide-semiconductor field-effect transistor (MOSFET) ; Modulation ; MOSFETs ; Penetration ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Stacks ; Substrates ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.2814-2820</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c392t-8e7a20aa820c708cd6dd171f5a9d23c11b060de55bfd77a962cde212f9a43eb63</citedby><cites>FETCH-LOGICAL-c392t-8e7a20aa820c708cd6dd171f5a9d23c11b060de55bfd77a962cde212f9a43eb63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5559392$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5559392$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23387340$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Iijima, R</creatorcontrib><creatorcontrib>Edge, L F</creatorcontrib><creatorcontrib>Paruchuri, V</creatorcontrib><creatorcontrib>Takayanagi, M</creatorcontrib><title>Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The inversion-layer capacitance C inv of electrons in high- k /metal gate stacks (HKMGs) is studied theoretically and experimentally from the viewpoint of the penetration of electrons into the dielectrics. The numerical calculation of C inv in the dielectric/substrate bilayer structure has clarified the influence of penetration on C inv . C inv in an HKMG is evaluated experimentally and is compared with the computational predictions in terms of the dependence on the dielectric boundary and the silicon crystal orientation. The consistency of the experiment and the calculation is the first evidence for the considerable modulation of C inv due to penetration in the actual HKMG. Moreover, the dependence of C inv on substrate biasing is investigated. The detailed analysis of C inv in the system where the confinement of the inversion layer is intentionally changed has led to a further understanding of C inv determined by penetration.</description><subject>Applied sciences</subject><subject>Boundaries</subject><subject>Capacitance</subject><subject>Consistency</subject><subject>Dielectrics</subject><subject>Electronics</subject><subject>Equivalent oxide thickness</subject><subject>Exact sciences and technology</subject><subject>gate capacitance</subject><subject>Gates</subject><subject>High K dielectric materials</subject><subject>high- k /metal gate stack (HKMG)</subject><subject>high- k dielectric</subject><subject>inversion layer</subject><subject>Mathematical analysis</subject><subject>metal gate</subject><subject>metal-oxide-semiconductor field-effect transistor (MOSFET)</subject><subject>Modulation</subject><subject>MOSFETs</subject><subject>Penetration</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Stacks</subject><subject>Substrates</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1PwjAYxhujiYjeTbzsYuJl0I-tXY8GEUgwHsSDp-WleyeVuWFbTPCvtwTC6c2T5yN5f4TcMjpgjOrhYvw04DQqTmUmmDojPZbnKtUyk-ekRykrUi0KcUmuvP-KUmYZ75GP0QocmIDO_kGwXZt0dTJrf9H5KNI57NAlI9iAsQFag3t73KAJrmt9Yttkaj9XabIevmCAJplAwOQtgFn7a3JRQ-Px5nj75P15vBhN0_nrZDZ6nKdGaB7SAhVwClBwahQtTCWriilW56ArLgxjSypphXm-rCulQEtuKuSM1xoygUsp-uThsLtx3c8WfSi_rTfYNNBit_Ulk4qJTBScxyg9RI3rvHdYlxtnv8HtSkbLPcUyUiz3FMsjxVi5P66DN9DULkKw_tTjQhRKZDTm7g45i4gnO89zHb8U_9UPenA</recordid><startdate>20101101</startdate><enddate>20101101</enddate><creator>Iijima, R</creator><creator>Edge, L F</creator><creator>Paruchuri, V</creator><creator>Takayanagi, M</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20101101</creationdate><title>Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks</title><author>Iijima, R ; Edge, L F ; Paruchuri, V ; Takayanagi, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c392t-8e7a20aa820c708cd6dd171f5a9d23c11b060de55bfd77a962cde212f9a43eb63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Boundaries</topic><topic>Capacitance</topic><topic>Consistency</topic><topic>Dielectrics</topic><topic>Electronics</topic><topic>Equivalent oxide thickness</topic><topic>Exact sciences and technology</topic><topic>gate capacitance</topic><topic>Gates</topic><topic>High K dielectric materials</topic><topic>high- k /metal gate stack (HKMG)</topic><topic>high- k dielectric</topic><topic>inversion layer</topic><topic>Mathematical analysis</topic><topic>metal gate</topic><topic>metal-oxide-semiconductor field-effect transistor (MOSFET)</topic><topic>Modulation</topic><topic>MOSFETs</topic><topic>Penetration</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Stacks</topic><topic>Substrates</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Iijima, R</creatorcontrib><creatorcontrib>Edge, L F</creatorcontrib><creatorcontrib>Paruchuri, V</creatorcontrib><creatorcontrib>Takayanagi, M</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Iijima, R</au><au>Edge, L F</au><au>Paruchuri, V</au><au>Takayanagi, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2010-11-01</date><risdate>2010</risdate><volume>57</volume><issue>11</issue><spage>2814</spage><epage>2820</epage><pages>2814-2820</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The inversion-layer capacitance C inv of electrons in high- k /metal gate stacks (HKMGs) is studied theoretically and experimentally from the viewpoint of the penetration of electrons into the dielectrics. The numerical calculation of C inv in the dielectric/substrate bilayer structure has clarified the influence of penetration on C inv . C inv in an HKMG is evaluated experimentally and is compared with the computational predictions in terms of the dependence on the dielectric boundary and the silicon crystal orientation. The consistency of the experiment and the calculation is the first evidence for the considerable modulation of C inv due to penetration in the actual HKMG. Moreover, the dependence of C inv on substrate biasing is investigated. The detailed analysis of C inv in the system where the confinement of the inversion layer is intentionally changed has led to a further understanding of C inv determined by penetration.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2010.2064317</doi><tpages>7</tpages></addata></record> |
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| subjects | Applied sciences Boundaries Capacitance Consistency Dielectrics Electronics Equivalent oxide thickness Exact sciences and technology gate capacitance Gates High K dielectric materials high- k /metal gate stack (HKMG) high- k dielectric inversion layer Mathematical analysis metal gate metal-oxide-semiconductor field-effect transistor (MOSFET) Modulation MOSFETs Penetration Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Stacks Substrates Transistors |
| title | Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks |
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