Component redistribution during Nb and In/Nb film growth on single-crystal silicon

The component redistribution during the growth of Nb and In/Nb films on single-crystal silicon has been studied by Rutherford backscattering spectroscopy and X-ray diffraction. The results indicate that magnetron sputtering of indium onto niobium films gives rise to mass transfer across the Nb/Si in...

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Veröffentlicht in:	Inorganic materials 2009-09, Vol.45 (9), p.998-1002
Hauptverfasser:	Afonin, N. N., Logacheva, V. A., Khoviv, A. M., Vakhtel’, V. M., Shramchenko, Yu. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Chemistry and Materials Science Diffraction Film growth Indium Industrial Chemistry/Chemical Engineering Inorganic Chemistry Magnetron sputtering Mass transfer Materials Science Niobium Silicon Single crystals
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