Component redistribution during Nb and In/Nb film growth on single-crystal silicon

The component redistribution during the growth of Nb and In/Nb films on single-crystal silicon has been studied by Rutherford backscattering spectroscopy and X-ray diffraction. The results indicate that magnetron sputtering of indium onto niobium films gives rise to mass transfer across the Nb/Si in...

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Veröffentlicht in:	Inorganic materials 2009-09, Vol.45 (9), p.998-1002
Hauptverfasser:	Afonin, N. N., Logacheva, V. A., Khoviv, A. M., Vakhtel’, V. M., Shramchenko, Yu. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Chemistry and Materials Science Diffraction Film growth Indium Industrial Chemistry/Chemical Engineering Inorganic Chemistry Magnetron sputtering Mass transfer Materials Science Niobium Silicon Single crystals
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container_end_page	1002
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container_title	Inorganic materials
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creator	Afonin, N. N. Logacheva, V. A. Khoviv, A. M. Vakhtel’, V. M. Shramchenko, Yu. S.
description	The component redistribution during the growth of Nb and In/Nb films on single-crystal silicon has been studied by Rutherford backscattering spectroscopy and X-ray diffraction. The results indicate that magnetron sputtering of indium onto niobium films gives rise to mass transfer across the Nb/Si interface and to niobium and silicon heterodiffusion, accompanied by chemical reactions and the formation of silicides. The likely reason for this is the generation of defects during the magnetron sputtering of indium.
doi_str_mv	10.1134/S0020168509090106
format	Article
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The likely reason for this is the generation of defects during the magnetron sputtering of indium.</description><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Diffraction</subject><subject>Film growth</subject><subject>Indium</subject><subject>Industrial Chemistry/Chemical Engineering</subject><subject>Inorganic Chemistry</subject><subject>Magnetron sputtering</subject><subject>Mass transfer</subject><subject>Materials Science</subject><subject>Niobium</subject><subject>Silicon</subject><subject>Single crystals</subject><issn>0020-1685</issn><issn>1608-3172</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9UE1LxDAQDaLguvoDvOXope4kadP2KIsfC4uCH-fQ5mPN0iY1aZH996asN0Hm8GZ47w0zD6FrAreEsHz1BkCB8KqAOhUBfoIWhEOVMVLSU7SY6Wzmz9FFjHsAyIuqXqDXte8H77QbcdDKxjHYdhqtd1hNwbodfm5x4xTeuFXqjO16vAv-e_zESRKToNOZDIc4Nl0aOyu9u0RnpumivvrFJfp4uH9fP2Xbl8fN-m6bSUbJmJmC03SbljxPoOpcc15T4DUH2YKCxkjTmnSkyiuVt02lqamILEsogWrO2BLdHPcOwX9NOo6it1Hqrmuc9lMUhJeEMc4IJCk5SmXwMQZtxBBs34SDICDm_MSf_JKHHj1xmIPQQez9FFz66B_TD80RcUU</recordid><startdate>20090901</startdate><enddate>20090901</enddate><creator>Afonin, N. 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subjects	Chemistry Chemistry and Materials Science Diffraction Film growth Indium Industrial Chemistry/Chemical Engineering Inorganic Chemistry Magnetron sputtering Mass transfer Materials Science Niobium Silicon Single crystals
title	Component redistribution during Nb and In/Nb film growth on single-crystal silicon
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