SOI 1T-DRAM cells with variable channel length and thickness: Experimental comparison of programming mechanisms

Several concepts of capacitor-less single-transistor (1T) DRAM have recently been proposed to overcome the scaling limitations of bulk DRAMs. In this study, we focus on the comparison of two programming mechanisms of 1T-DRAMs: the impact ionization (II), the most common mechanism to store charges in...

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Veröffentlicht in:	Solid-state electronics 2011-11, Vol.65-66, p.256-262
Hauptverfasser:	Hubert, Alexandre, Bawedin, Maryline, Guegan, Georges, Ernst, Thomas, Faynot, Olivier, Cristoloveanu, Sorin
Format:	Artikel
Sprache:	eng
Schlagworte:	1T-DRAM Applied sciences Capacitor-less DRAM Channels Coupling Design. Technologies. Operation analysis. Testing Devices Dynamics Electronics Exact sciences and technology Floating-body Fully depleted Gates Integrated circuits Integrated circuits by function (including memories and processors) Ionization Memory MOSFETs MSD effect MSDRAM Programming Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon-On-Insulator (SOI) Transistors
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